scholarly journals Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and Solutions

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 50
Author(s):  
Ying-Chen Chen ◽  
Chao-Cheng Lin ◽  
Yao-Feng Chang
Keyword(s):  
Random Access ◽  
Resistive Random Access Memory ◽  
High Density ◽  
Bilayer Structure ◽  
Crossbar Array ◽  
Voltage Stress ◽  
Stress Degradation ◽  
Intrinsic Nonlinearity ◽  
Crossbar Architecture ◽  
Read Accuracy

The sneak path current (SPC) is the inevitable issue in crossbar memory array while implementing high-density storage configuration. The crosstalks are attracting much attention, and the read accuracy in the crossbar architecture is deteriorated by the SPC. In this work, the sneak path current problem is observed and investigated by the electrical experimental measurements in the crossbar array structure with the half-read scheme. The read margin of the selected cell is improved by the bilayer stacked structure, and the sneak path current is reduced ~20% in the bilayer structure. The voltage-read stress-induced read margin degradation has also been investigated, and less voltage stress degradation is showed in bilayer structure due to the intrinsic nonlinearity. The oxide-based bilayer stacked resistive random access memory (RRAM) is presented to offer immunity toward sneak path currents in high-density memory integrations when implementing the future high-density storage and in-memory computing applications.

Impact of resistive switching parameters on resistive random access memory crossbar arrays

2020 ◽  
Vol 34 (12) ◽  
pp. 2050115
Author(s):  
Liping Fu ◽  
Sikai Chen ◽  
Zewei Wu ◽  
Xiaoyan Li ◽  
Mingyang You ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
High Resistance State ◽  
Resistive Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Storage Density ◽  
Crossbar Array ◽  
Resistance State ◽  
Potential Impact

Sneak current issue of RRAM-based crossbar array is one of the biggest hindrances for high-density memory application. The integration of an addition selector to each cell is one of the most familiar solutions to avoid this undesired cross-talk issue, and resistive switching parameters would affect on the storage density. This paper investigates the potential impact of different resistive switching parameters on crossbar arrays with one-diode one-resistor (1D1R) and one-selector one-resistor (1S1R) architectures. Results indicate that 1S1R architecture is a more scalable technology for high-density crossbar array than 1D1R, and the storage density of 1D1R- and 1S1R-based crossbar array shows little dependence on resistance values of high-resistance state and low-resistance state, which gives a guideline for choosing appropriate selectors for RRAM crossbar array with specific parameters.

scholarly journals An overview of resistive random access memory based high-density crossbar array

2018 ◽  
Vol 63 (28-29) ◽  
pp. 2954-2966
Author(s):  
Xiaoyan Li ◽  
Yingtao Li ◽  
Xiaoping Gao ◽  
Chuanbing Chen ◽  
Genliang Han
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
High Density ◽  
Access Memory ◽  
Crossbar Array

Reliable analog resistive switching behaviors achieved using memristive devices in AlOx/HfOx bilayer structure for neuromorphic systems

2021 ◽  
Author(s):  
Meng Qi ◽  
Tianquan Fu ◽  
Huadong Yang ◽  
ye tao ◽  
Chunran Li ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Learning Experience ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Spike Timing ◽  
Information Storage ◽  
Bilayer Structure ◽  
Neuromorphic Computing ◽  
Von Neumann ◽  
Simulation Based

Abstract Human brain synaptic memory simulation based on resistive random access memory (RRAM) has an enormous potential to replace traditional Von Neumann digital computer thanks to several advantages, including its simple structure, high-density integration, and the capability to information storage and neuromorphic computing. Herein, the reliable resistive switching (RS) behaviors of RRAM are demonstrated by engineering AlOx/HfOx bilayer structure. This allows for uniform multibit information storage. Further, the analog switching behaviors are capable of imitate several synaptic learning functions, including learning experience behaviors, short-term plasticity-long-term plasticity transition, and spike-timing-dependent-plasticity (STDP). In addition, the memristor based on STDP learning rules are implemented in image pattern recognition. These results may offer a promising potential of HfOx-based memristors for future information storage and neuromorphic computing applications.

scholarly journals Three-Dimensional (3D) Vertical Resistive Random-Access Memory (VRRAM) Synapses for Neural Network Systems

Materials ◽  
2019 ◽  
Vol 12 (20) ◽  
pp. 3451 ◽  
Author(s):  
Wookyung Sun ◽  
Sujin Choi ◽  
Bokyung Kim ◽  
Junhee Park
Keyword(s):  
Neural Network ◽  
Structural Characteristics ◽  
3D Structure ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Operating Principle ◽  
Access Memory ◽  
Network Systems ◽  
Crossbar Array

Memristor devices are generally suitable for incorporation in neuromorphic systems as synapses because they can be integrated into crossbar array circuits with high area efficiency. In the case of a two-dimensional (2D) crossbar array, however, the size of the array is proportional to the neural network’s depth and the number of its input and output nodes. This means that a 2D crossbar array is not suitable for a deep neural network. On the other hand, synapses that use a memristor with a 3D structure are suitable for implementing a neuromorphic chip for a multi-layered neural network. In this study, we propose a new optimization method for machine learning weight changes that considers the structural characteristics of a 3D vertical resistive random-access memory (VRRAM) structure for the first time. The newly proposed synapse operating principle of the 3D VRRAM structure can simplify the complexity of a neuron circuit. This study investigates the operating principle of 3D VRRAM synapses with comb-shaped word lines and demonstrates that the proposed 3D VRRAM structure will be a promising solution for a high-density neural network hardware system.

scholarly journals Resistive switching of the HfOx/HfO2 bilayer heterostructure and its transmission characteristics as a synapse

RSC Advances ◽  
2018 ◽  
Vol 8 (73) ◽  
pp. 41884-41891 ◽  
Author(s):  
Tingting Tan ◽  
Yihang Du ◽  
Ai Cao ◽  
Yaling Sun ◽  
Hua Zhang ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Bilayer Structure ◽  
Transmission Characteristics ◽  
Access Memory ◽  
Switching Characteristics

In this work, HfOx/HfO2 homo-bilayer structure based resistive random access memory devices were fabricated, and the resistive switching characteristics of the devices were investigated.

Suppression of endurance degradation by applying constant voltage stress in one-transistor and one-resistor resistive random access memory

2016 ◽  
Vol 56 (1) ◽  
pp. 010303 ◽  
Author(s):  
Yu-Ting Su ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Tian-Jian Chu ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Constant Voltage ◽  
Access Memory ◽  
Voltage Stress

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

Nanoscale ◽  
2018 ◽  
Vol 10 (33) ◽  
pp. 15608-15614 ◽  
Author(s):  
Ying-Chen Chen ◽  
Szu-Tung Hu ◽  
Chih-Yang Lin ◽  
Burt Fowler ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Low Power ◽  
Resistive Switching ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Intrinsic Nonlinearity

Selectorless graphite-based resistive random-access memory (RRAM) has been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without an additional selector or transistor for low-power RRAM array application.

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