scholarly journals Camphor-Based CVD Bilayer Graphene/Si Heterostructures for Self-Powered and Broadband Photodetection

Micromachines ◽  
2020 ◽  
Vol 11 (9) ◽  
pp. 812
Author(s):  
Dung-Sheng Tsai ◽  
Ping-Yu Chiang ◽  
Meng-Lin Tsai ◽  
Wei-Chen Tu ◽  
Chi Chen ◽  
...  

This work demonstrates a self-powered and broadband photodetector using a heterojunction formed by camphor-based chemical vaper deposition (CVD) bilayer graphene on p-Si substrates. Here, graphene/p-Si heterostructures and graphene layers serve as ultra-shallow junctions for UV absorption and zero bandgap junction materials (<Si bandgap (1.1 eV)) for long-wave near-infrared (LWNIR) absorption, respectively. According to the Raman spectra and large-area (16 × 16 μm2) Raman mapping, a low-defect, >95% coverage bilayer and high-uniformity graphene were successfully obtained by camphor-based CVD processes. Furthermore, the carrier mobility of the camphor-based CVD bilayer graphene at room temperature is 1.8 × 103 cm2/V·s. Due to the incorporation of camphor-based CVD graphene, the graphene/p-Si Schottky junctions show a good rectification property (rectification ratio of ~110 at ± 2 V) and good performance as a self-powered (under zero bias) photodetector from UV to LWNIR. The photocurrent to dark current ratio (PDCR) value is up to 230 at 0 V under white light illumination, and the detectivity (D*) is 8 × 1012 cmHz1/2/W at 560 nm. Furthermore, the photodetector (PD) response/decay time (i.e., rise/fall time) is ~118/120 μs. These results support the camphor-based CVD bilayer graphene/Si Schottky PDs for use in self-powered and ultra-broadband light detection in the future.

2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.


2020 ◽  
Vol 12 (1) ◽  
Author(s):  
Hao Xu ◽  
Juntong Zhu ◽  
Guifu Zou ◽  
Wei Liu ◽  
Xiao Li ◽  
...  

AbstractTernary transition metal dichalcogenide alloys with spatially graded bandgaps are an emerging class of two-dimensional materials with unique features, which opens up new potential for device applications. Here, visible–near-infrared and self-powered phototransistors based on spatially bandgap-graded MoS2(1−x)Se2x alloys, synthesized by a simple and controllable chemical solution deposition method, are reported. The graded bandgaps, arising from the spatial grading of Se composition and thickness within a single domain, are tuned from 1.83 to 1.73 eV, leading to the formation of a homojunction with a built-in electric field. Consequently, a strong and sensitive gate-modulated photovoltaic effect is demonstrated, enabling the homojunction phototransistors at zero bias to deliver a photoresponsivity of 311 mA W−1, a specific detectivity up to ~ 1011 Jones, and an on/off ratio up to ~ 104. Remarkably, when illuminated by the lights ranging from 405 to 808 nm, the biased devices yield a champion photoresponsivity of 191.5 A W−1, a specific detectivity up to ~ 1012 Jones, a photoconductive gain of 106–107, and a photoresponsive time in the order of ~ 50 ms. These results provide a simple and competitive solution to the bandgap engineering of two-dimensional materials for device applications without the need for p–n junctions.


2016 ◽  
Vol 4 (31) ◽  
pp. 7464-7471 ◽  
Author(s):  
Birong Luo ◽  
Bingyan Chen ◽  
Anle Wang ◽  
Dechao Geng ◽  
Jie Xu ◽  
...  

Large-area AB stacked bilayer graphene layers with layer-resolved growth were successfully fabricated through dynamic pressure chemical vapor deposition.


2015 ◽  
Vol 23 (4) ◽  
pp. 4839 ◽  
Author(s):  
Longhui Zeng ◽  
Chao Xie ◽  
Lili Tao ◽  
Hui Long ◽  
Chunyin Tang ◽  
...  

2020 ◽  
Vol 13 (12) ◽  
pp. 121001
Author(s):  
Wei Qu ◽  
Shukun Weng ◽  
Liping Zhang ◽  
Min Sun ◽  
Bo Liu ◽  
...  
Keyword(s):  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Mengxiao Chen ◽  
Zhe Wang ◽  
Qichong Zhang ◽  
Zhixun Wang ◽  
Wei Liu ◽  
...  

AbstractThe well-developed preform-to-fiber thermal drawing technique owns the benefit to maintain the cross-section architecture and obtain an individual micro-scale strand of fiber with the extended length up to thousand meters. In this work, we propose and demonstrate a two-step soluble-core fabrication method by combining such an inherently scalable manufacturing method with simple post-draw processing to explore the low viscosity polymer fibers and the potential of soft fiber electronics. As a result, an ultra-stretchable conductive fiber is achieved, which maintains excellent conductivity even under 1900% strain or 1.5 kg load/impact freefalling from 0.8-m height. Moreover, by combining with triboelectric nanogenerator technique, this fiber acts as a self-powered self-adapting multi-dimensional sensor attached on sports gears to monitor sports performance while bearing sudden impacts. Next, owing to its remarkable waterproof and easy packaging properties, this fiber detector can sense different ion movements in various solutions, revealing the promising applications for large-area undersea detection.


2021 ◽  
pp. 2001138
Author(s):  
Yichen Mao ◽  
Pengpeng Xu ◽  
Qiang Wu ◽  
Jun Xiong ◽  
Renmiao Peng ◽  
...  
Keyword(s):  

2021 ◽  
Vol 2 (2) ◽  
pp. 174-185
Author(s):  
Antonio Cánovas-Saura ◽  
Ramón Ruiz ◽  
Rodolfo López-Vicente ◽  
José Abad ◽  
Antonio Urbina ◽  
...  

Variable transmission applications for light control or energy saving based on electrochromic materials have been successfully applied in the past in the building, sports, or automotive fields, although lower costs and ease of fabrication, installation, and maintenance are still needed for deeper market integration. In this study, all-printed large area (900 cm2 active area) flexible electrochromic devices were fabricated, and an autoregulating self-power supply was implemented through the use of organic solar cells. A new perspective was applied for automotive light transmission function, where portability and mechanical flexibility added new features for successful market implementation. Special emphasis was placed in applying solution-based scalable deposition techniques and commercially available materials (PEDOT-PSS as an electrochromic material; vanadium oxide, V2O5, as a transparent ion-storage counter electrode; and organic solar modules as the power supply). A straightforward electronic control method was designed and successfully implemented allowing for easy user control. We describe a step-by-step route following the design, materials optimization, electronic control simulation, in-solution fabrication, and scaling-up of fully functional self-powered portable electrochromic devices.


ACS Omega ◽  
2021 ◽  
Author(s):  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Nur Hamizah Zainal Ariffin ◽  
Poh Choon Ooi ◽  
Mohd Farhanulhakim Mohd Razip Wee ◽  
Mohd Ambri Mohamed ◽  
...  

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