scholarly journals Heavily-Doped Bulk Silicon Sidewall Electrodes Embedded between Free-Hanging Microfluidic Channels by Modified Surface Channel Technology

Micromachines ◽  
2020 ◽  
Vol 11 (6) ◽  
pp. 561
Author(s):  
Yiyuan Zhao ◽  
Henk-Willem Veltkamp ◽  
Thomas V. P. Schut ◽  
Remco G. P. Sanders ◽  
Bogdan Breazu ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Microfluidic Channels ◽  
Bulk Silicon ◽  
Sensors And Actuators ◽  
Cross Sectional ◽  
Mask Design ◽  
Electrical Sensing ◽  
Innovative Idea ◽  
Heavily Doped

Surface Channel Technology is known as the fabrication platform to make free-hanging microchannels for various microfluidic sensors and actuators. In this technology, thin film metal electrodes, such as platinum or gold, are often used for electrical sensing and actuation purposes. As a result that they are located at the top surface of the microfluidic channels, only topside sensing and actuation is possible. Moreover, in microreactor applications, high temperature degradation of thin film metal layers limits their performance as robust microheaters. In this paper, we report on an innovative idea to make microfluidic devices with integrated silicon sidewall electrodes, and we demonstrate their use as microheaters. This is achieved by modifying the original Surface Channel Technology with optimized mask designs. The modified technology allows to embed heavily-doped bulk silicon electrodes in between the sidewalls of two adjacent free-hanging microfluidic channels. The bulk silicon electrodes have the same electrical properties as the extrinsic silicon substrate. Their cross-sectional geometry and overall dimensions can be designed by optimizing the mask design, hence the resulting resistance of each silicon electrode can be customized. Furthermore, each silicon electrode can be electrically insulated from the silicon substrate. They can be designed with large cross-sectional areas and allow for high power dissipation when used as microheater. A demonstrator device is presented which reached 119.4 ∘ C at a power of 206.9 m W , limited by thermal conduction through the surrounding air. Other potential applications are sensors using the silicon sidewall electrodes as resistive or capacitive readout.

High-resolution scanning electron microscopy of thin-film magnetic media of magnetic recording disk

1992 ◽  
Vol 50 (2) ◽  
pp. 1334-1335
Author(s):  
K. Ogura ◽  
H. Nishioka ◽  
N. Ikeo ◽  
T. Kanazawa ◽  
J. Teshima
Keyword(s):  
Thin Film ◽  
Fine Structure ◽  
High Resolution ◽  
Magnetic Recording ◽  
High Performance ◽  
Magnetic Hysteresis ◽  
Grain Structure ◽  
Magnetic Media ◽  
Cross Sectional ◽  
Resolution Observation

Structural appraisal of thin film magnetic media is very important because their magnetic characters such as magnetic hysteresis and recording behaviors are drastically altered by the grain structure of the film. However, in general, the surface of thin film magnetic media of magnetic recording disk which is process completed is protected by several-nm thick sputtered carbon. Therefore, high-resolution observation of a cross-sectional plane of a disk is strongly required to see the fine structure of the thin film magnetic media. Additionally, observation of the top protection film is also very important in this field.Recently, several different process-completed magnetic disks were examined with a UHR-SEM, the JEOL JSM 890, which consisted of a field emission gun and a high-performance immerse lens. The disks were cut into approximately 10-mm squares, the bottom of these pieces were carved into more than half of the total thickness of the disks, and they were bent. There were many cracks on the bent disks. When these disks were observed with the UHR-SEM, it was very difficult to observe the fine structure of thin film magnetic media which appeared on the cracks, because of a very heavy contamination on the observing area.

scholarly journals Thermal stability and diffusion characteristics of ultrathin amorphous carbon films grown on crystalline and nitrogenated silicon substrates by filtered cathodic vacuum arc deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shengxi Wang ◽  
Anurag Roy ◽  
Kyriakos Komvopoulos
Keyword(s):  
Thermal Stability ◽  
Amorphous Carbon ◽  
Silicon Substrate ◽  
Elevated Temperatures ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Cross Sectional ◽  
Prolonged Heating ◽  
Filtered Cathodic Vacuum Arc ◽  
Thermal Stability Of

AbstractAmorphous carbon (a-C) films are widely used as protective overcoats in many technology sectors, principally due to their excellent thermophysical properties and chemical inertness. The growth and thermal stability of sub-5-nm-thick a-C films synthesized by filtered cathodic vacuum arc on pure (crystalline) and nitrogenated (amorphous) silicon substrate surfaces were investigated in this study. Samples of a-C/Si and a-C/SiNx/Si stacks were thermally annealed for various durations and subsequently characterized by high-resolution transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS). The TEM images confirmed the continuity and uniformity of the a-C films and the 5-nm-thick SiNx underlayer formed by silicon nitrogenation using radio-frequency sputtering. The EELS analysis of cross-sectional samples revealed the thermal stability of the a-C films and the efficacy of the SiNx underlayer to prevent carbon migration into the silicon substrate, even after prolonged heating. The obtained results provide insight into the important attributes of an underlayer in heated multilayered media for preventing elemental intermixing with the substrate, while preserving the structural stability of the a-C film at the stack surface. An important contribution of this investigation is the establishment of an experimental framework for accurately assessing the thermal stability and elemental diffusion in layered microstructures exposed to elevated temperatures.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Cross-sectional X-ray nanobeam diffraction analysis of a compositionally graded CrNx thin film

2013 ◽  
Vol 542 ◽  
pp. 1-4 ◽  
Author(s):  
M. Bartosik ◽  
R. Daniel ◽  
C. Mitterer ◽  
I. Matko ◽  
M. Burghammer ◽  
...  
Keyword(s):  
Thin Film ◽  
Diffraction Analysis ◽  
Cross Sectional ◽  
X Ray

Influence of the silicon substrate thickness on the response of thin film pyroelectric detectors

2002 ◽  
Vol 46 (8) ◽  
pp. 1155-1161 ◽  
Author(s):  
Jong Soo Ko ◽  
Weiguo Liu ◽  
Weiguang Zhu ◽  
Byung Man Kwak
Keyword(s):  
Thin Film ◽  
Silicon Substrate ◽  
Substrate Thickness ◽  
Pyroelectric Detectors

Experimental Measurement and Analysis of Microelectronics Application Polymer Materials Properties

1992 ◽  
Vol 264 ◽  
Author(s):  
Y.H. Jeng ◽  
Mirng-Ji Lii
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Silicon Substrate ◽  
Coupling Effect ◽  
Measurement Techniques ◽  
Epoxy Adhesive ◽  
Polymer Materials ◽  
Fea Model ◽  
Curvature Measurement ◽  
Substrate Curvature

AbstractA laser based surface scanning technique was utilized to measure the polyimide coated silicon wafer curvature resulting from thermal cycling and mismatch, Meanwhile, mechanical properties of polyimide thin film were characterized by DMA, TMA and tensile test. Based on the obtained material properties, A FEA model was developed to analyze the experimental results -reasonable correlation was obtained.Similar approaches were taken one step further in the MCM silicon substrate curvature measurement. In a MCM package with silicon substrate, epoxy adhesive, and ceramic package, substrate warpage was developed in a thermal cycle due to thermal mismatch between the substrate and the package and coupling effect linked by epoxy adhesive. Three different substrate curvature measurement techniques were applied to identify the substrate curvature and epoxy thin film properties were also well characterized. A 3D FEA model incorporating with the epoxy material properties was developed to analyze the substrate warpage and investigate an optimal package design.

FIB preparation of cross-sectional polymer thin film TEM samples

2008 ◽  
Vol 14 (S2) ◽  
pp. 996-997
Author(s):  
S Kim ◽  
A Minor
Keyword(s):  
Thin Film ◽  
New Mexico ◽  
Cross Sectional ◽  
Polymer Thin Film

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

scholarly journals Characterization of Sputtered Shape Memory Alloy Ni-Ti Films by Cross-sectional TEM and SEM

2008 ◽  
Vol 14 (S3) ◽  
pp. 85-86
Author(s):  
R.M.S. Martins ◽  
A. Mücklich ◽  
N. Schell ◽  
R.J.C. Silva ◽  
K.K. Mahesh ◽  
...  
Keyword(s):  
Thin Films ◽  
Shape Memory ◽  
Smart Materials ◽  
Functionally Graded ◽  
Sensors And Actuators ◽  
Successful Development ◽  
Cross Sectional ◽  
Mechanical Devices ◽  
Ti Films

Ni-Ti Shape Memory Alloys (SMAs) have been attracting attention as smart materials because they can work as sensors and actuators at the same time. Miniaturization of mechanical devices is evolving toward sub-micron dimensions raising important questions in the properties of Ni-Ti films. In thin films it is essential to investigate the microstructure to understand the origin of the thickness limit. The design of functionally graded films has also been considered but for their successful development it is important to characterize the variations in crystalline structure.

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