scholarly journals Investigation on Threshold Voltage Adjustment of Threshold Switching Devices with HfO2/Al2O3 Superlattice on Transparent ITO/Glass Substrate

Micromachines ◽  
2020 ◽  
Vol 11 (5) ◽  
pp. 525
Author(s):  
Yejoo Choi ◽  
Jaemin Shin ◽  
Seungjun Moon ◽  
Changhwan Shin
Keyword(s):  
Atomic Layer Deposition ◽  
Barrier Height ◽  
Threshold Voltage ◽  
Glass Substrate ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Cross Point ◽  
Threshold Switching ◽  
Layer Deposition ◽  
Ito Glass

Threshold voltage adjustment in threshold switching (TS) devices with HfO2/Al2O3 superlattice (by means of changing the cycle ratio of HfO2 to Al2O3 in atomic layer deposition) is investigated to implement a transparent cross-point array. TS devices with different cycle ratios (i.e., 3:1, 3:2, and 3:3) were fabricated and studied. The threshold voltage of the devices was increased from 0.9 V to 3.2 V, as the relative contents of Al2O3 layer in the superlattice were increased. At the same time, it is demonstrated that the off-resistance values of the devices were enhanced from 2.6 × 109 to 6 × 1010 Ω as the atomic layer deposition (ALD) cycle ratio of HfO2 to Al2O3 layer was adjusted from 3:1 to 3:3. However, the hold voltage and the on-current values were almost identical for the three devices. These results can be understood using the larger barrier height of Al2O3 layer than that of HfO2 layer.

Durable superhydrophobic wool fabrics coating with nanoscale Al2O3 layer by atomic layer deposition

2015 ◽  
Vol 349 ◽  
pp. 876-879 ◽  
Author(s):  
Xingfang Xiao ◽  
Genyang Cao ◽  
Fengxiang Chen ◽  
Yunrong Tang ◽  
Xin Liu ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Al2o3 Layer ◽  
Wool Fabrics ◽  
Layer Deposition

Chemical interactions in the atomic layer deposition of Ge–Sb–Se–Te films and their ovonic threshold switching behavior

2018 ◽  
Vol 6 (18) ◽  
pp. 5025-5032 ◽  
Author(s):  
Sijung Yoo ◽  
Chanyoung Yoo ◽  
Eui-Sang Park ◽  
Woohyun Kim ◽  
Yoon Kyeung Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Switching Behavior ◽  
Chemical Interactions ◽  
Threshold Switching ◽  
Layer Deposition

Ge–Sb–Se–Te quaternary films were prepared through atomic layer deposition (ALD) for ovonic threshold switching (OTS) applications.

Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O

2006 ◽  
Vol 527-529 ◽  
pp. 1083-1086 ◽  
Author(s):  
Jeong Hyun Moon ◽  
Da Il Eom ◽  
Sang Yong No ◽  
Ho Keun Song ◽  
Jeong Hyuk Yim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Interfacial Layer ◽  
Atomic Layer ◽  
Mis Structure ◽  
Al2o3 Layer ◽  
Metal Insulator ◽  
Layer Deposition ◽  
Mis Structures

The La2O3 and Al2O3/La2O3 layers were grown on 4H-SiC by atomic layer deposition (ALD) method. The electrical properties of La2O3 on 4H-SiC were examined using metal-insulator-semiconductor (MIS) structures of Pt/La2O3(18nm)/4H-SiC and Pt/Al2O3(10nm)/La2O3(5nm)/4H-SiC. For the Pt/La2O3(18nm)/4H-SiC structure, even though the leakage current density was slightly reduced after the rapid thermal annealing at 500 oC, accumulation capacitance was gradually increased with increasing bias voltage due to a high leakage current. On the other hand, since the leakage current in the accumulation regime was decreased for the Pt/Al2O3/La2O3/4H-SiC MIS structure owing to the capped Al2O3 layer, the capacitance was saturated. But the saturation capacitance was strongly dependent on frequency, indicating a leaky interfacial layer formed between the La2O3 and SiC during the fabrication process of Pt/Al2O3(10nm)/ La2O3(5nm)/ 4H-SiC structure.

Threshold voltage control of a thin-film transistor using an Al–Zn–O channel prepared using atomic layer deposition by controlling the Al dopant positions

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 92534-92540 ◽  
Author(s):  
Eom-Ji Kim ◽  
Won-Ho Lee ◽  
Sung-Min Yoon
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Threshold Voltage ◽  
Thin Film Transistor ◽  
Voltage Control ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Doped Zno ◽  
Active Channel

We proposed a methodology for controlling the threshold voltage by adjusting the position of the Al dopant layer within an Al-doped-ZnO active channel of a thin film transistor.

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