scholarly journals Energy Band Gap Investigation of Biomaterials: A Comprehensive Material Approach for Biocompatibility of Medical Electronic Devices

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 105 ◽  
Author(s):  
Ashkan Shafiee ◽  
Elham Ghadiri ◽  
Jareer Kassis ◽  
David Williams ◽  
Anthony Atala
Keyword(s):  
Tissue Engineering ◽  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Electronic Device ◽  
Electronic Devices ◽  
Scale Up ◽  
Optical Absorption Spectroscopy ◽  
Phenol Red ◽  
Energy Band Gap

Over the past ten years, tissue engineering has witnessed significant technological and scientific advancements. Progress in both stem cell science and additive manufacturing have established new horizons in research and are poised to bring improvements in healthcare closer to reality. However, more sophisticated indications such as the scale-up fabrication of biological structures (e.g., human tissues and organs) still require standardization. To that end, biocompatible electronics may be helpful in the biofabrication process. Here, we report the results of our systematic exploration to seek biocompatible/degradable functional electronic materials that could be used for electronic device fabrications. We investigated the electronic properties of various biomaterials in terms of energy diagrams, and the energy band gaps of such materials were obtained using optical absorption spectroscopy. The main component of an electronic device is manufactured with semiconductor materials (i.e., Eg between 1 to 2.5 eV). Most biomaterials showed an optical absorption edge greater than 2.5 eV. For example, fibrinogen, glycerol, and gelatin showed values of 3.54, 3.02, and 3.0 eV, respectively. Meanwhile, a few materials used in the tissue engineering field were found to be semiconductors, such as the phenol red in cell culture media (1.96 eV energy band gap). The data from this research may be used to fabricate biocompatible/degradable electronic devices for medical applications.

Energy Band Gap Studies of CdS Nanomaterials

2008 ◽  
Vol 3 ◽  
pp. 97-102 ◽  
Author(s):  
Dinu Patidar ◽  
K.S. Rathore ◽  
N.S. Saxena ◽  
Kananbala Sharma ◽  
T.P. Sharma
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Chemical Method ◽  
Optical Absorption Spectroscopy ◽  
Cds Nanoparticles ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Simple Chemical

The CdS nanoparticles of different sizes are synthesized by a simple chemical method. Here, CdS nanoparticles are grown through the reaction of solution of different concentration of CdCl2 with H2S. X-ray diffraction pattern confirms nano nature of CdS and has been used to determine the size of particle. Optical absorption spectroscopy is used to measure the energy band gap of these nanomaterials by using Tauc relation. Energy band gap ranging between 3.12 eV to 2.47 eV have been obtained for the samples containing the nanoparticles in the range of 2.3 to 6.0 nm size. A correlation between the band gap and size of the nanoparticles is also established.

Tailoring energy band gap and optical absorption of Cd doped MnTe2

2020 ◽  
pp. 111059
Author(s):  
B. Thapa ◽  
P.K. Patra ◽  
Sandeep Puri ◽  
K. Neupane ◽  
A. Shankar
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

Optical absorption above the energy band gap in Hg1-xCdxTe

1996 ◽  
Vol 37 (4) ◽  
pp. 525-531 ◽  
Author(s):  
B. Li ◽  
J.H. Chu ◽  
Y. Chang ◽  
Y.S. Gui ◽  
D.Y. Tang
Keyword(s):  
Optical Absorption ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

Optical Properties of Colloidal CdSe/ZnS core/shell Nanocrystals Embedded in a UV Curable Resin

2006 ◽  
Vol 959 ◽  
Author(s):  
Abhishek Joshi ◽  
Edwin Davis ◽  
Kaushik Narsingi ◽  
Omar Manasreh ◽  
B. D. Weaver
Keyword(s):  
Optical Properties ◽  
Optical Absorption ◽  
Band Gap ◽  
Absorption Spectra ◽  
Energy Band ◽  
Core Shell ◽  
Optical Absorption Spectra ◽  
Energy Band Gap ◽  
Uv Curable ◽  
Uv Curable Resin

ABSTRACTOptical absorption and photoluminescence techniques were used to investigate the band gap of colloidal CdSe/ZnS core/shell nanocrystals matrixed in a UV curable resin. The band gap was measured for several nanocrystals with size ranging between 1.9 and 4.0 nm. The band gap (Eg) was determined from the first exciton peaks observed in the optical absorption spectra. Both Debye and Einstein temperatures were estimated from fitting the energy band gap vs. temperature using two different empirical expressions.

scholarly journals Structural and optical properties of Co and Ni doped ZnO thin films prepared by RF magnetron sputtering

2017 ◽  
Vol 18 (3) ◽  
pp. 302-308 ◽  
Author(s):  
I.D. Stolyarchuk ◽  
G.I. Kleto ◽  
A. Dziedzic
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Optical Absorption ◽  
Surface Morphology ◽  
Band Gap ◽  
Energy Band ◽  
Zno Thin Films ◽  
Optical Absorption Spectra ◽  
Energy Band Gap ◽  
Structural And Optical Properties

We have reported the effect of Co and Ni doping on structural and optical properties of ZnO thin films prepared by RF reactive sputtering technique. The composite targets were formed by mixing and pressing of ZnO, Mn3O4, CoO and NiO powders. The thin films were deposited on sapphire, quartz and glass substrates. The structure study confirms the formation of the hexagonal wurtzite ZnO without any secondary phase in transition metal (Co, Ni) - doped samples. Cross-sectional TEM images of all studied samples show a denseand uniformly textured structure composed of column-like structure along the growth direction. The surface morphology of the thin films was studied using atomic force microscopy (AFM). Different surface morphology (AFM) images were obtained depending on the film composition and growth conditions. Optical absorption spectra suggest of substitution Zn2+ ions in ZnO lattice by transition metal atoms. The shift of the absorption edge due to decrease the energy band gap with increasing cobalt content and complex dependence of the energy band gap on content of nickel was observed in optical absorption spectra of the studied films. The room temperature photoluminescence peaks are attributed to near band gap emission and vacancy or defect states.

scholarly journals No Resistive Normal Electrons in Beginning Superconducting States

Mathematics ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 1512
Author(s):  
Changho Seo ◽  
Seongsoo Cho ◽  
Je Huan Koo
Keyword(s):  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap

We investigate why normal electrons in superconductors have no resistance. Under the same conditions, the band gap is reduced to zero as well, but normal electrons at superconducting states are condensed into this virtual energy band gap.

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