scholarly journals Silicon Carbide Microstrip Radiation Detectors

Micromachines ◽  
2019 ◽  
Vol 10 (12) ◽  
pp. 835 ◽  
Author(s):  
Donatella Puglisi ◽  
Giuseppe Bertuccio
Keyword(s):  
Silicon Carbide ◽  
High Performance ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Wide Bandgap ◽  
Wide Range ◽  
Position Sensitive ◽  
Silicon And Germanium ◽  
Full Depletion ◽  
Prototype Detector

Compared with the most commonly used silicon and germanium, which need to work at cryogenic or low temperatures to decrease their noise levels, wide-bandgap compound semiconductors such as silicon carbide allow the operation of radiation detectors at room temperature, with high performance, and without the use of any bulky and expensive cooling equipment. In this work, we investigated the electrical and spectroscopic performance of an innovative position-sensitive semiconductor radiation detector in epitaxial 4H-SiC. The full depletion of the epitaxial layer (124 µm, 5.2 × 1013 cm−3) was reached by biasing the detector up to 600 V. For comparison, two different microstrip detectors were fully characterized from −20 °C to +107 °C. The obtained results show that our prototype detector is suitable for high resolution X-ray spectroscopy with imaging capability in a wide range of operating temperatures.

scholarly journals Evaluation of Various Scintillator Materials in Radiation Detector Design for Positron Emission Tomography (PET)

Crystals ◽  
2020 ◽  
Vol 10 (10) ◽  
pp. 869
Author(s):  
Siwei Xie ◽  
Xi Zhang ◽  
Yibin Zhang ◽  
Gaoyang Ying ◽  
Qiu Huang ◽  
...  
Keyword(s):  
Positron Emission Tomography ◽  
High Performance ◽  
Radiation Detector ◽  
Experimental Studies ◽  
Light Output ◽  
Radiation Detectors ◽  
Emission Tomography ◽  
Timing Resolution ◽  
Positron Emission ◽  
Co Doped

The performance of radiation detectors used in positron-emission tomography (PET) is determined by the intrinsic properties of the scintillators, the geometry and surface treatment of the scintillator crystals and the electrical and optical characteristics of the photosensors. Experimental studies were performed to assess the timing resolution and energy resolution of detectors constructed with samples of different scintillator materials (LaBr3, CeBr3, LFS, LSO, LYSO: Ce, Ca and GAGG) that were fabricated into different shapes with various surface treatments. The saturation correction of SiPMs was applied for tested detectors based on a Tracepro simulation. Overall, we tested 28 pairs of different forms of scintillators to determine the one with the best CTR and light output. Two common high-performance silicon photomultipliers (SiPMs) provided by SensL (J-series, 6 mm) or AdvanSiD (NUV, 6 mm) were used for photodetectors. The PET detector constructed with 6 mm CeBr3 cubes achieved the best CTR with a FWHM of 74 ps. The 4 mm co-doped LYSO: Ce, Ca pyramid crystals achieved 88.1 ps FWHM CTR. The 2 mm, 4 mm and 6 mm 0.2% Ce, 0.1% Ca co-doped LYSO cubes achieved 95.6 ps, 106 ps and 129 ps FWHM CTR, respectively. The scintillator crystals with unpolished surfaces had better timing than those with polished surfaces. The timing resolution was also improved by using certain geometric factors, such as a pyramid shape, to improve light transportation in the scintillator crystals.

On the Progress Made in GaN Vertical Device Technology

2019 ◽  
Vol 28 (01n02) ◽  
pp. 1940010
Author(s):  
Dong Ji ◽  
Srabanti Chowdhury
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductors ◽  
Wide Range ◽  
Higher Power ◽  
Key Driver ◽  
Bandgap Semiconductors ◽  
Device Technology ◽  
Made In

Silicon technology enabled most of the electronics we witness today, including power electronics. However, wide bandgap semiconductors are capable of addressing high-power electronics more efficiently compared to Silicon, where higher power density is a key driver. Among the wide bandgap semiconductors, silicon carbide (SiC) and gallium nitride (GaN) are in the forefront in power electronics. GaN is promising in its vertical device topology. From CAVETs to MOSFETs, GaN has addressed voltage requirements over a wide range. Our current research in GaN offers a promising view of GaN that forms the theme of this article. CAVETs and OGFETs (a type of MOSFET) in GaN are picked to sketch the key achievements made in GaN vertical device over the last decade.

Simulations of Heterostructures Based on 3C-4H and 6H-4H Silicon Carbide Polytypes

2018 ◽  
Vol 924 ◽  
pp. 302-305
Author(s):  
Muhammad Haroon Rashid ◽  
Ants Koel ◽  
Toomas Rang
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Frequency ◽  
High Performance ◽  
Light Emitting Diode ◽  
Wide Bandgap ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Current Voltage ◽  
Bandgap Semiconductors

In the last decade, silicon carbide (SiC) has gained a remarkable position among wide bandgap semiconductors due to its high temperature, high frequency, and high power electronics applications. SiC heterostructures, based on the most prominent polytypes like 3C-SiC, 4H-SiC and 6H-SiC, exhibit distinctive electrical and physical properties that make them promising candidates for high performance optoelectronic applications. The results of simulations of nn-junction 3C-4H/SiC and 6H-4H/SiC heterostructures, at the nanoscale and microscale, are presented in this paper. Nanoscale devices are simulated with QuantumWise Atomistix Toolkit (ATK) software, and microscale devices are simulated with Silvaco TCAD software. Current-voltage (IV) characteristics of nanoscale and microscale simulated devices are compared and discussed. The effects of non-ideal bonding at the heterojunction interface due to lattice misplacements (axial displacement of bonded wafers) are studied using the ATK simulator. These simulations lay the groundwork for the experiments, which are targeted to produce either a photovoltaic device or a light-emitting diode (working in the ultraviolet or terahertz spectra), by direct bonding of SiC polytypes.

scholarly journals Characteristics of TlBr single crystals grown using the vertical Bridgman-Stockbarger method for semiconductor-based radiation detector applications

2016 ◽  
Vol 34 (2) ◽  
pp. 297-301 ◽  
Author(s):  
Dong Jin Kim ◽  
Joon-Ho Oh ◽  
Han Soo Kim ◽  
Young Soo Kim ◽  
Manhee Jeong ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Performance ◽  
Radiation Detector ◽  
Radiation Detectors ◽  
Middle Part ◽  
High Quality ◽  
Single Crystalline ◽  
Crystalline Sample ◽  
Vertical Bridgman ◽  
Stockbarger Method

AbstractTlBr single crystals grown using the vertical Bridgman-Stockbarger method were characterized for semiconductor based radiation detector applications. It has been shown that the vertical Bridgman-Stockbarger method is effective to grow high-quality single crystalline ingots of TlBr. The TlBr single crystalline sample, which was located 6 cm from the tip of the ingot, exhibited lower impurity concentration, higher crystalline quality, high enough bandgap (>2.7 eV), and higher resistivity (2.5 × 1011 Ω·cm) which enables using the fabricated samples from the middle part of the TlBr ingot for fabricating high performance semiconductor radiation detectors.

Numerical Modelling of Front Contact Alignment for High Efficiency Cd1-xZnxTe and Cd1-xMgxTe Solar Cells for Tandem Devices

MRS Advances ◽  
2018 ◽  
Vol 3 (52) ◽  
pp. 3121-3128 ◽  
Author(s):  
Geethika K. Liyanage ◽  
Adam B. Phillips ◽  
Fadhil K. Alfadhili ◽  
Michael J. Heben
Keyword(s):  
High Performance ◽  
Fill Factor ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Band Alignment ◽  
High Concentration ◽  
Device Structure ◽  
Wide Range

AbstractWide bandgap Cd1-xZnxTe (CZT) and Cd1-xMgxTe (CMT) have drawn attention as top cells in tandem devices. These materials allow tuning of the band gap over a wide range by controlling the Zn or Mg concentration with little alteration to the base CdTe properties. Historically, CdS has been used as a heterojunction partner for CZT or CMT devices. However, these devices show a significant lower open circuit voltage (VOC) than expected for wide bandgap absorbers. Recent modelling work suggests that poor band alignment between the CdS emitter and absorber results in a high concentration of holes at the interface, which increased recombination and limits the VOC. This recombination should be exacerbated for wider bandgap absorbers such as CZT and CMT. In this study, we use numerical simulations with SCAPS-1D software to investigate the band alignment in the front contacts for wider bandgap CdTe based absorbers. Results show that by replacing the CdS with a wide bandgap emitter layer, the VOC can be greatly improved, though under certain conditions, the fill factor remains sensitive to the location of the emitter conduction band. As a result, different transparent front contacts were also investigated to determine a device structure required to produce a high performance CZT or CMT top-cell for tandems devices.

2D/3D Perovskite Heterostructures for High Performance and High Open Circuit Voltage in Wide-Bandgap Perovskite Photovoltaics

2019 ◽  
Author(s):  
Ulrich W. Paetzold ◽  
Saba Gharibzadeh ◽  
Marius Jackoby ◽  
Tobias Abzieher ◽  
Somayeh Moghadamzadeh ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Wide Bandgap ◽  
Open Circuit

Validated Stability Indicating HPTLC Method for the Estimation of Amoxapine in Different Stress Conditions

2019 ◽  
Vol 15 (3) ◽  
pp. 273-279
Author(s):  
Shweta G. Rangari ◽  
Nishikant A. Raut ◽  
Pradip W. Dhore
Keyword(s):  
High Performance ◽  
Limit Of Detection ◽  
Degradation Products ◽  
Analysis Data ◽  
Peak Height ◽  
Good Resolution ◽  
Stability Indicating ◽  
Limit Of Quantitation ◽  
Wide Range ◽  
Hptlc Method

Background:The unstable and/or toxic degradation products may form due to degradation of drug which results into loss of therapeutic activity and lead to life threatening condition. Hence, it is important to establish the stability characteristics of drug in various conditions such as in temperature, light, oxidising agent and susceptibility across a wide range of pH values.Introduction:The aim of the proposed study was to develop simple, sensitive and economic stability indicating high performance thin layer chromatography (HPTLC) method for the quantification of Amoxapine in the presence of degradation products.Methods:Amoxapine and its degraded products were separated on precoated silica gel 60F254 TLC plates by using mobile phase comprising of methanol: toluene: ammonium acetate (6:3:1, v/v/v). The densitometric evaluation was carried out at 320 nm in reflectance/absorbance mode. The degradation products obtained as per ICH guidelines under acidic, basic and oxidative conditions have different Rf values 0.12, 0.26 and 0.6 indicating good resolution from each other and pure drug with Rf: 0.47. Amoxapine was found to be stable under neutral, thermal and photo conditions.Results:The method was validated as per ICH Q2 (R1) guidelines in terms of accuracy, precision, ruggedness, robustness and linearity. A good linear relationship between concentration and response (peak area and peak height) over the range of 80 ng/spot to 720 ng/spot was observed from regression analysis data showing correlation coefficient 0.991 and 0.994 for area and height, respectively. The limit of detection (LOD) and limit of quantitation (LOQ) for area were found to be 1.176 ng/mL and 3.565 ng/mL, whereas for height, 50.063 ng/mL and 151.707 ng/mL respectively.Conclusion:The statistical analysis confirmed the accuracy, precision and selectivity of the proposed method which can be effectively used for the analysis of amoxapine in the presence of degradation products.

Phytochemical, Analytical and Medicinal Studies of Holoptelea integrifolia Roxb. Planch - A Review

2019 ◽  
Vol 5 (4) ◽  
pp. 270-277 ◽  
Author(s):  
Vijay Kumar ◽  
Simranjeet Singh ◽  
Ragini Bhadouria ◽  
Ravindra Singh ◽  
Om Prakash
Keyword(s):  
Liquid Chromatography ◽  
Thin Layer ◽  
Thin Layer Chromatography ◽  
High Performance ◽  
Biologically Active ◽  
Toxicological Studies ◽  
Wide Range ◽  
Layer Chromatography

Holoptelea integrifolia Roxb. Planch (HI) has been used to treat various ailments including obesity, osteoarthritis, arthritis, inflammation, anemia, diabetes etc. To review the major phytochemicals and medicinal properties of HI, exhaustive bibliographic research was designed by means of various scientific search engines and databases. Only 12 phytochemicals have been reported including biologically active compounds like betulin, betulinic acid, epifriedlin, octacosanol, Friedlin, Holoptelin-A and Holoptelin-B. Analytical methods including the Thin Layer Chromatography (TLC), High-Performance Thin Layer Chromatography (HPTLC), High-Performance Liquid Chromatography (HPLC) and Liquid Chromatography With Mass Spectral (LC-MS) analysis have been used to analyze the HI. From medicinal potency point of view, these phytochemicals have a wide range of pharmacological activities such as antioxidant, antibacterial, anti-inflammatory, and anti-tumor. In the current review, it has been noticed that the mechanism of action of HI with biomolecules has not been fully explored. Pharmacology and toxicological studies are very few. This seems a huge literature gap to be fulfilled through the detailed in-vivo and in-vitro studies.

scholarly journals RELaTED Project: New Developments on Ultra-Low Temperature District Heating Networks

Proceedings ◽  
2020 ◽  
Vol 65 (1) ◽  
pp. 25
Author(s):  
Antonio Garrido Marijuan ◽  
Roberto Garay ◽  
Mikel Lumbreras ◽  
Víctor Sánchez ◽  
Olga Macias ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Performance ◽  
Waste Heat ◽  
District Heating ◽  
Hot Water ◽  
Thermal Systems ◽  
Heating Source ◽  
Wide Range ◽  
Thermal Sources ◽  
Heating Networks

District heating networks deliver around 13% of the heating energy in the EU, being considered as a key element of the progressive decarbonization of Europe. The H2020 REnewable Low TEmperature District project (RELaTED) seeks to contribute to the energy decarbonization of these infrastructures through the development and demonstration of the following concepts: reduction in network temperature down to 50 °C, integration of renewable energies and waste heat sources with a novel substation concept, and improvement on building-integrated solar thermal systems. The coupling of renewable thermal sources with ultra-low temperature district heating (DH) allows for a bidirectional energy flow, using the DH as both thermal storage in periods of production surplus and a back-up heating source during consumption peaks. The ultra-low temperature enables the integration of a wide range of energy sources such as waste heat from industry. Furthermore, RELaTED also develops concepts concerning district heating-connected reversible heat pump systems that allow to reach adequate thermal levels for domestic hot water as well as the use of the network for district cooling with high performance. These developments will be demonstrated in four locations: Estonia, Serbia, Denmark, and Spain.

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