scholarly journals Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 727
Author(s):  
Do-Kyung Kim ◽  
Hyeonju Lee ◽  
Xue Zhang ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Electrical Properties ◽  
Flexible Electronics ◽  
Field Effect ◽  
Vinylidene Fluoride ◽  
Mechanical Stability ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Next Generation ◽  
Poly Vinylidene Fluoride ◽  
Memory Applications

Flexible organic ferroelectric field-effect transistors (Fe-FETs) have attracted attention for next-generation memory applications. A fundamental understanding of the electrical properties and mechanical stability of transistors is a prerequisite to realizing practical flexible electronics. Here, we demonstrate the solvent-dependent electrical characteristics and mechanical stability of flexible Fe-FETs. Poly(vinylidene fluoride-trifluoro-ethylene) (P(VDF-TrFE)) based Fe-FETs were fabricated by using dimethylformamide (DMF) and methyl ethyl ketone (MEK) solvents on a polyimide substrate. P(VDF-TrFE) from DMF formed a smoother surface than a surface from MEK; the surface property greatly affected the electrical properties and mechanical stability of the devices. Larger hysteresis and higher mobility were obtained from Fe-FET using DMF compared to those characteristics from using MEK. Furthermore, Fe-FET using DMF showed lower degradation of on-current and mobility under repetitive mechanical stress than an MEK-based Fe-FET, due to its excellent semiconductor-insulator interface. These results will guide appropriate solvent selection and contribute to the improvement of flexible Fe-FET electrical properties and mechanical stability in the next generation of memory devices.

Interface screening and imprint in poly(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors

2009 ◽  
Vol 105 (5) ◽  
pp. 054110 ◽  
Author(s):  
I. Lazareva ◽  
Y. Koval ◽  
P. Müller ◽  
K. Müller ◽  
K. Henkel ◽  
...  
Keyword(s):  
Field Effect ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Poly Vinylidene Fluoride

Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2951-2956 ◽  
Author(s):  
Amrit Laudari ◽  
Shubhra Gangopadhyay ◽  
Suchismita Guha
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Field Effect ◽  
Carrier Transport ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Negative Temperature ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Poly Vinylidene Fluoride

ABSTRACTA comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

Degradation of ZnO nanowire devices under the ambient condition

2008 ◽  
Vol 1080 ◽  
Author(s):  
Dong-Wook Kim ◽  
Soo-Han Choi ◽  
Hyun-Jin Ji ◽  
Sang Woo Kim ◽  
Seung Eon Moon ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Ambient Condition ◽  
Zno Nanowires ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Defect States ◽  
Oxide Nanowires

ABSTRACTField effect transistors(FETs) made of ZnO nanowires are very sensitive to the gas environment, so that the passivation can be a good way to get reliable nanowire FETs with longer lifetime and the better mobility. The studies on the passivation effects with the positive electron-beam resist was investigated by selectively covering the part of nanowire devices between the electrodes. Reproducible electrical characteristics were recorded, reflecting the stable electrical properties by the passivation which deters the degradation of a device. Considering the defect states of oxide nanowires dominate the charge states, the pre-state just before the passivation process will be crucial to understand the reproducible and controllable device characteristics of nanowire devices.

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