scholarly journals Programmable Electrofluidics for Ionic Liquid Based Neuromorphic Platform

Micromachines ◽  
2019 ◽  
Vol 10 (7) ◽  
pp. 478 ◽  
Author(s):  
Walker L. Boldman ◽  
Cheng Zhang ◽  
Thomas Z. Ward ◽  
Dayrl P. Briggs ◽  
Bernadeta R. Srijanto ◽  
...  

Due to the limit in computing power arising from the Von Neumann bottleneck, computational devices are being developed that mimic neuro-biological processing in the brain by correlating the device characteristics with the synaptic weight of neurons. This platform combines ionic liquid gating and electrowetting for programmable placement/connectivity of the ionic liquid. In this platform, both short-term potentiation (STP) and long-term potentiation (LTP) are realized via electrostatic and electrochemical doping of the amorphous indium gallium zinc oxide (aIGZO), respectively, and pulsed bias measurements are demonstrated for lower power considerations. While compatible with resistive elements, we demonstrate a platform based on transitive amorphous indium gallium zinc oxide (aIGZO) pixel elements. Using a lithium based ionic liquid, we demonstrate both potentiation (decrease in device resistance) and depression (increase in device resistance), and propose a 2D platform array that would enable a much higher pixel count via Active Matrix electrowetting.

2021 ◽  
Author(s):  
Hyun-Woong Choi ◽  
Ki-Woo Song ◽  
Seong-Hyun Kim ◽  
Nguyen Kim Thanh ◽  
Sunil Babu Eadi ◽  
...  

Abstract The electrical properties, resistive switching behavior, and long-term potentiation/depression (LTP/LTD) in a single indium-gallium-zinc-oxide (IGZO) and bi-layer IGZO/ZnO memristors were investigated for synapse application. The use of oxide bi-layer memristor, in particular, improved electrical properties such as stability, reliability of memristors, and increase in the synaptic weight states. Bi-layer IGZO/ZnO memristors had a set voltage of 0.9 V, and reset voltage around -0.7 V, resulting in low-power consumption for neuromorphic systems. The oxygen vacancies in X-ray photoelectron spectroscopy analysis played a role in the modulation of the high-resistance state (HRS) (oxygen-deficient) and the low-resistance state (oxygen-rich) region. The VRESET of bi-layer IGZO/ZnO memristors was lower than that of a single IGZO, which implied that oxygen vacancy filaments could be easily ruptured due to the higher oxygen vacancy peak HRS layer. The nonlinearity of LTP and LTD characteristics in a bi-layer IGZO/ZnO memristor was 6.77% and 11.49%, respectively, compared to those of 20.03% and 51.1% in a single IGZO memristor, respectively. Therefore, the extra ZnO layer in the bi-layer memristor with IGZO was potentially significant and essential to achieve a small set voltage and a reset voltage, and the switching behavior to form the conductive path.


2009 ◽  
Vol 5 (12) ◽  
pp. 438-445 ◽  
Author(s):  
Patrick Wellenius ◽  
Arun Suresh ◽  
Haojun Luo ◽  
Leda M. Lunardi ◽  
John F. Muth

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  

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