scholarly journals Effects of UV Irradiation on the Sensing Properties of In2O3 for CO Detection at Low Temperature

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 338 ◽  
Author(s):  
Lucio Bonaccorsi ◽  
Angela Malara ◽  
Andrea Donato ◽  
Nicola Donato ◽  
Salvatore Gianluca Leonardi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Indium Oxide ◽  
Uv Irradiation ◽  
Operating Mode ◽  
Semiconductor Layer ◽  
Experimental Conditions ◽  
Sensing Material ◽  
Resistive Sensor ◽  
Co Detection ◽  
P Type

In this study, UV irradiation was used to improve the response of indium oxide (In2O3) used as a CO sensing material for a resistive sensor operating in a low temperature range, from 25 °C to 150 °C. Different experimental conditions have been compared, varying UV irradiation mode and sensor operating temperature. Results demonstrated that operating the sensor under continuous UV radiation did not improve the response to target gas. The most advantageous condition was obtained when the UV LED irradiated the sensor in regeneration and was turned off during CO detection. In this operating mode, the semiconductor layer showed an apparent “p-type” behavior due to the UV irradiation. Overall, the effect was an improvement of the indium oxide response at 100 °C toward low CO concentrations (from 1 to 10 ppm) that showed higher results than in the dark, which is promising to extend the detection of CO with an In2O3-based sensor in the sub-ppm range.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

ChemInform Abstract: Selective CO Detection by Using Indium Oxide-Based Semiconductor Gas Sensor.

ChemInform ◽  
2010 ◽  
Vol 27 (26) ◽  
pp. no-no
Author(s):  
H. YAMAURA ◽  
J. TAMAKI ◽  
K. MORIYA ◽  
N. MIURA ◽  
N. YAMAZOE
Keyword(s):  
Gas Sensor ◽  
Indium Oxide ◽  
Semiconductor Gas Sensor ◽  
Co Detection

Sticky thermoelectric materials for flexible thermoelectric modules to capture low-temperature waste heat

MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 481-487 ◽  
Author(s):  
Norifusa Satoh ◽  
Masaji Otsuka ◽  
Yasuaki Sakurai ◽  
Takeshi Asami ◽  
Yoshitsugu Goto ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Waste Heat ◽  
Air Cooling ◽  
Conductive Adhesives ◽  
Hot Plate ◽  
Low Thermal Conductivity ◽  
Te Modules ◽  
P Type ◽  
Flexible Thermoelectric

ABSTRACTWe examined a working hypothesis of sticky thermoelectric (TE) materials, which is inversely designed to mass-produce flexible TE sheets with lamination or roll-to-roll processes without electric conductive adhesives. Herein, we prepared p-type and n-type sticky TE materials via mixing antimony and bismuth powders with low-volatilizable organic solvents to achieve a low thermal conductivity. Since the sticky TE materials are additionally injected into punched polymer sheets to contact with the upper and bottom electrodes in the fabrication process, the sticky TE modules of ca. 2.4 mm in thickness maintained temperature differences of ca. 10°C and 40°C on a hot plate of 40 °C and 120°C under a natural-air cooling condition with a fin. In the single-cell resistance analysis, we found that 75∼150-µm bismuth powder shows lower resistance than the smaller-sized one due to the fewer number of particle-particle interfaces in the electric pass between the upper and bottom electrodes. After adjusting the printed wiring pattern for the upper and bottom electrodes, we achieved 42 mV on a hot plate (120°C) with the 6 x 6 module having 212 Ω in the total resistance. In addition to the possibility of mass production at a reasonable cost, the sticky TE materials provide a low thermal conductivity for flexible TE modules to capture low-temperature waste heat under natural-air cooling conditions with fins for the purpose of energy harvesting.

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition

2007 ◽  
Vol 515 (5) ◽  
pp. 2921-2925 ◽  
Author(s):  
Chunyu Wang ◽  
Volker Cimalla ◽  
Genady Cherkashinin ◽  
Henry Romanus ◽  
Majdeddin Ali ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Indium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Transparent Conducting ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Enhanced photoelectroctatlytic performance of etched 3C–SiC thin film for water splitting under visible light

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54441-54446 ◽  
Author(s):  
Yazhou Wang ◽  
Sheng Li ◽  
Jisheng Han ◽  
William Wen ◽  
Hao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Visible Light ◽  
Water Splitting ◽  
P Type

A low temperature alternating supply epitaxy grown p-type 3C–SiC thin film is further etched to enhance the photoelectrocatalytic performance.

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