scholarly journals Design of 400 V Miniature DC Solid State Circuit Breaker with SiC MOSFET

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 314 ◽  
Author(s):  
Hui Li ◽  
Renze Yu ◽  
Yi Zhong ◽  
Ran Yao ◽  
Xinglin Liao ◽  
...  
Keyword(s):  
Solid State ◽  
Field Effect Transistors ◽  
Short Circuit ◽  
Circuit Breaker ◽  
Oxide Semiconductor ◽  
Dc Microgrid ◽  
Insulated Gate Bipolar Transistor ◽  
Prototype Development ◽  
Solid State Circuit ◽  
Solid State Circuit Breaker

Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) have the advantages of high-frequency switching capability and the capability to withstand high temperatures, which are suitable for switching devices in a direct current (DC) solid state circuit breaker (SSCB). To guarantee fast and reliable action of a 400 V DC SSCB with SiC MOSFET, circuit design and prototype development were carried out. Taking 400V DC microgrid as research background, firstly, the topology of DC SSCB with SiC MOSFET was introduced. Then, the drive circuit of SiC MOSFET, fault detection circuit, energy absorption circuit, and snubber circuit of the SSCB were designed and analyzed. Lastly, a prototype of the DC SSCB with SiC MOSFET was developed, tested, and compared with the SSCB with Silicon (Si) insulated gate bipolar transistor (IGBT). Experimental results show that the designed circuits of SSCB with SiC MOSFET are valid. Also, the developed miniature DC SSCB with the SiC MOSFET exhibits faster reaction to the fault and can reduce short circuit time and fault current in contrast with the SSCB with Si IGBT. Hence, the proposed SSCB can better meet the requirements of DC microgrid protection.

scholarly journals Bidirectional Short-Circuit Current Blocker for DC Microgrid Based on Solid-State Circuit Breaker

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 306 ◽  
Author(s):  
Lujun Wang ◽  
Boyu Feng ◽  
Yu Wang ◽  
Tiezhou Wu ◽  
Huipin Lin
Keyword(s):  
Solid State ◽  
Low Voltage ◽  
Short Circuit ◽  
Circuit Breaker ◽  
Short Circuit Current ◽  
Rotational Inertia ◽  
Dc Microgrid ◽  
Protection Strategy ◽  
Solid State Circuit ◽  
Solid State Circuit Breaker

In order to solve the imminent problem in that the traditional protection strategy cannot meet time requirements, together with the fact that the rotational inertia of a DC microgrid is small and short-circuit fault develops rapidly, a bidirectional short-circuit current blocker (BSCCB) based on solid-state circuit breaker for a DC microgrid is proposed. Firstly, the bidirectional current blocking circuit structure is proposed based on the analysis of key components. Then, a top-level differential protection strategy is developed based on the aforementioned proposal. Finally, the performance of the blocking circuit is simulated and verified by experiments. The results show that the proposed method can block short-circuit current within 4 ms, and the response speed of the protection strategy is very fast compared with previous approaches. BSCCB also has reclosing, bidirectional blocking and energy releasing functions. The current blocker proposed in this paper can be reused multiple times and has a promising future in low-voltage DC microgrid application.

scholarly journals A Digital-Controlled SiC-Based Solid State Circuit Breaker with Soft Switch-Off Method for DC Power System

Electronics ◽  
2019 ◽  
Vol 8 (8) ◽  
pp. 837 ◽  
Author(s):  
Qin ◽  
Mo ◽  
Xun ◽  
Zhang ◽  
Dong
Keyword(s):  
Solid State ◽  
Field Effect Transistors ◽  
Cooling System ◽  
Short Circuit ◽  
Circuit Breaker ◽  
Short Circuit Current ◽  
Oxide Semiconductor ◽  
Circuit Breakers ◽  
Solid State Circuit ◽  
Protection Method

Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

An Improved Method of Solid State Circuit Breaker in Low Voltage DC Microgrid

2021 ◽  
Author(s):  
Lingyu Sun ◽  
Song Tang ◽  
Pengcheng Wang ◽  
Junfei Han ◽  
Yuqiang Wang ◽  
...  
Keyword(s):  
Solid State ◽  
Low Voltage ◽  
Circuit Breaker ◽  
Improved Method ◽  
Dc Microgrid ◽  
Solid State Circuit ◽  
Solid State Circuit Breaker

A Novel Solid-State Circuit Breaker for On-Board DC Microgrid System

2019 ◽  
Vol 66 (7) ◽  
pp. 5715-5723 ◽  
Author(s):  
Weilin Li ◽  
Yufeng Wang ◽  
Xuanlyu Wu ◽  
Xiaobin Zhang
Keyword(s):  
Solid State ◽  
Circuit Breaker ◽  
Dc Microgrid ◽  
Solid State Circuit ◽  
Solid State Circuit Breaker
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