scholarly journals Incorporation of Phosphorus Impurities in a Silicon Nanowire Transistor with a Diameter of 5 nm

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 127 ◽  
Author(s):  
Yanfeng Jiang ◽  
Wenjie Wang ◽  
Zirui Wang ◽  
Jian-Ping Wang
Keyword(s):  
Doping Concentration ◽  
Silicon Nanowire ◽  
Nanometer Scale ◽  
Inhomogeneous Distribution ◽  
Electrical Characteristics ◽  
Phosphorus Doping ◽  
Impurity Segregation ◽  
20 Nm ◽  
Positive Effect ◽  
Incorporation Method

Silicon nanowire (SiNW) is always accompanied by severe impurity segregation and inhomogeneous distribution, which deteriorates the SiNWs electrical characteristics. In this paper, a method for phosphorus doping incorporation in SiNW was proposed using plasma. It showed that this method had a positive effect on the doping concentration of the wires with a diameter ranging from 5 nm to 20 nm. Moreover, an SiNW transistor was assembled based on the nanowire with a 5 nm diameter. The device’s ION/IOFF ratio reached 104. The proposed incorporation method could be helpful to improve the effect of the dopants in the silicon nanowire at a nanometer scale.

A Study of the Photoelectric Effect Caused by a Laser Beam Used in a Beam Bounce Technique in a C-AFM System

2008 ◽  
Author(s):  
Hung-Sung Lin ◽  
Mong-Sheng Wu
Keyword(s):  
Laser Beam ◽  
Failure Analysis ◽  
Atomic Force Microscope ◽  
Photoelectric Effect ◽  
Scanning Probe ◽  
Nanometer Scale ◽  
Electrical Characteristics ◽  
Atomic Force ◽  
Probe Microscope ◽  
Probe Head

Abstract The use of a scanning probe microscope (SPM), such as a conductive atomic force microscope (C-AFM) has been widely reported as a method of failure analysis in nanometer scale science and technology [1-6]. A beam bounce technique is usually used to enable the probe head to measure extremely small movements of the cantilever as it is moved across the surface of the sample. However, the laser beam used for a beam bounce also gives rise to the photoelectric effect while we are measuring the electrical characteristics of a device, such as a pn junction. In this paper, the photocurrent for a device caused by photon illumination was quantitatively evaluated. In addition, this paper also presents an example of an application of the C-AFM as a tool for the failure analysis of trap defects by taking advantage of the photoelectric effect.

Steep Switching Characteristics of Partially Gated p+–n+–i–n+ Silicon-Nanowire Transistors

2021 ◽  
Vol 21 (8) ◽  
pp. 4330-4335
Author(s):  
Jaemin Son ◽  
Doohyeok Lim ◽  
Sangsig Kim
Keyword(s):  
Field Effect ◽  
Impact Ionization ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Operation Mode ◽  
Feedback Loops ◽  
Charge Carriers ◽  
Electrical Characteristics ◽  
Nanowire Transistors ◽  
Switching Characteristics

In this study, we examine the electrical characteristics of p+–n+–i–n+ silicon-nanowire field-effect transistors with partially gated channels. The silicon-nanowire field-effect transistors operate with barrier height modulation through positive feedback loops of charge carriers triggered by impact ionization. Our field-effect transistors exhibit outstanding switching characteristics, with an on current of ˜10−4 A, an on/off current ratio of ˜106, and a point subthreshold swing of ˜23 mV/dec. Moreover, the devices inhibit ambipolar characteristics because of the use of the partially gated structure and feature the p-channel operation mode.

scholarly journals High Performance GAA SNWT with a Triangular Cross Section: Simulation and Experiments

2018 ◽  
Vol 8 (9) ◽  
pp. 1553 ◽  
Author(s):  
Ming Li ◽  
Gong Chen ◽  
Ru Huang
Keyword(s):  
Cross Section ◽  
High Performance ◽  
Silicon Nanowire ◽  
Wet Etching ◽  
Excellent Performance ◽  
Cross Sectional ◽  
Triangular Cross Section ◽  
Tcad Simulation ◽  
Equivalent Distance ◽  
20 Nm

In this paper, we present a gate-all-around silicon nanowire transistor (GAA SNWT) with a triangular cross section by simulation and experiments. Through the TCAD simulation, it was found that with the same nanowire width, the triangular cross-sectional SNWT was superior to the circular or quadrate one in terms of the subthreshold swing, on/off ratio, and SCE immunity, which resulted from the smallest equivalent distance from the nanowire center to the surface in triangular SNWTs. Following this, we fabricated triangular cross-sectional GAA SNWTs with a nanowire width down to 20 nm by TMAH wet etching. This process featured its self-stopped etching behavior on a silicon (1 1 1) crystal plane, which made the triangular cross section smooth and controllable. The fabricated triangular SNWT showed an excellent performance with a large Ion/Ioff ratio (~107), low SS (85 mV/dec), and preferable DIBL (63 mV/V). Finally, the surface roughness mobility of the fabricated device at a low temperature was also extracted to confirm the benefit of a stable cross section.

The latest trend in nano-bio sensor signal analysis

Sensor Review ◽  
2016 ◽  
Vol 36 (3) ◽  
pp. 303-311 ◽  
Author(s):  
Yijun Teh ◽  
Asral Bahari Jambek ◽  
Uda Hashim
Keyword(s):  
Signal Analysis ◽  
Design Methodology ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Peak Detection ◽  
Electrochemical Biosensors ◽  
Electrical Characteristics ◽  
Signal Processing Algorithm ◽  
Content Type ◽  
Effect Transistor

Purpose This paper aims to discuss a nanoscale biosensor and its signal analysis algorithms. Design/methodology/approach In this work, five nanoscale biosensors are reviewed, namely, silicon nanowire field-effect-transistor biosensors, polysilicon nanogap capacitive biosensors, nanotube amperometric biosensors, gold nanoparticle-based electrochemical biosensors and quantum dot-based electrochemical biosensors. Findings Each biosensor produces a different output signal depending on its electrical characteristics. Five signal analysers are studied, with most of the existing signal analyser analyses based on the amplitude of the signal. Based on the analysis, auto-threshold peak detection is proposed for further work. Originality/value Suitability of the signal processing algorithm to be applied to nano-biosensors was reported.

Effect of Doping Concentration on Electrical Characteristics of NMOS Structure

2009 ◽  
Author(s):  
O. Suziana ◽  
B. Ayub ◽  
M. Redzuan ◽  
A. R. Shahrir ◽  
M. Y. Yunus ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Electrical Characteristics ◽  
Effect Of Doping

Nanometer-scale Sn coatings improve the performance of silicon nanowire LIB anodes

2014 ◽  
Vol 2 (29) ◽  
pp. 11261 ◽  
Author(s):  
Alireza Kohandehghan ◽  
Kai Cui ◽  
Martin Kupsta ◽  
Elmira Memarzadeh ◽  
Peter Kalisvaart ◽  
...  
Keyword(s):  
Silicon Nanowire ◽  
Nanometer Scale

scholarly journals Luminescence, Energy Transfer, and Upconversion Mechanisms of Y2O3Nanomaterials Doped with Eu3+,Tb3+, Tm3+,Er3+, and Yb3+Ions

2007 ◽  
Vol 2007 ◽  
pp. 1-10 ◽  
Author(s):  
TranKim Anh ◽  
Paul Benalloul ◽  
Charles Barthou ◽  
Lam thiKieu Giang ◽  
Nguyen Vu ◽  
...  
Keyword(s):  
Energy Transfer ◽  
Doping Concentration ◽  
Spherical Shape ◽  
X Ray Diffraction ◽  
X Ray ◽  
Decay Times ◽  
Structure Phase ◽  
High Resolution Tem ◽  
Average Size ◽  
20 Nm

Luminescence, energy transfer, and upconversion mechanisms of nanophosphors (Y2O3 : Eu3+,Tb3+,Y2O3 : Tm3+,Y2O3 : Er3+,Yb3+) both in particle and colloidal forms were studied. The structure, phase, and morphology of the nanopowders and nanocolloidal media were determined by high-resolution TEM and X-ray diffraction. It was shown that the obtained nanoparticles have a round-spherical shape with average size in the range of 4 to 20 nm. Energy transfer was observed forY2O3 : Eu3+,Tb3+colloidal and powders, upconversion transitions were observed for bothY2O3 : Er3+andY2O3 : Er3+,Yb3+nanophosphors. The dependence of photoluminescence (PL) spectra and decay times on doping concentration has been investigated. The infrared to visible conversion of emission inY2O3 : Er3+,Yb3+system was analyzed and discussed aiming to be applied in the photonic technology.

Sign in / Sign up

Export Citation Format

Share Document