scholarly journals Plasma-Assisted Chemical Vapor Deposition of TiBN Coatings on Nanostructured Cemented WC-Co

Metals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1680
Author(s):  
Matija Sakoman ◽  
Danko Ćorić ◽  
Mateja Šnajdar Musa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hot Isostatic Pressing ◽  
Base Material ◽  
Surface Preparation ◽  
Chemical Vapor ◽  
Hard Coatings ◽  
Cemented Carbides ◽  
Wear Properties ◽  
Coating Adhesion

The plasma-assisted chemical vapor deposition (PACVD) technique has shown many advantages in applications, where thin coatings with superior wear properties are demanded, especially for geometrically complex parts. In this study, multilayered gradient TiBN coatings that were deposited on nanostructured cemented carbides by the PACVD method were investigated. Nanostructured samples of cemented carbides with the addition of 5 and 15 wt.% Co were sintered by the hot isostatic pressing, sinter-HIP technique. Surface preparation was conducted on samples in order to enable maximum coating adhesion. Tests that were conducted on produced samples aimed to investigate the mechanical and physical properties of coated samples. These tests included nanoindentation, surface layer characterization, and coating adhesion evaluation while using the Rockwell and scratch test. The obtained results confirmed that the PACVD process can be utilized for applying thin hard coatings to nanostructured cemented carbides that are produced by the sinter HIP process, resulting in a base material/ coating system that exhibits excellent physical and mechanical properties. The results presented in this paper give a valuable contribution to the research of TiBN coating systems and their potential for application under heavy wear conditions.

Controllable preparation of graphene-based film deposited on cemented carbides by chemical vapor deposition

2019 ◽  
Vol 55 (10) ◽  
pp. 4251-4264
Author(s):  
Kun Liu ◽  
Erzhou Ren ◽  
Jun Ma ◽  
Yang Cao ◽  
Jinguang Du ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cemented Carbides ◽  
Controllable Preparation

Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers

2001 ◽  
Vol 30 (3) ◽  
pp. 228-234 ◽  
Author(s):  
S. E. Saddow ◽  
T. E. Schattner ◽  
J. Brown ◽  
L. Grazulis ◽  
K. Mahalingam ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Surface Preparation ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
Chemical Vapor Deposition Growth

Preparation of monolithic ZnSxSe1−x layers via chemical vapor deposition followed by hot isostatic pressing

2006 ◽  
Vol 42 (8) ◽  
pp. 839-844 ◽  
Author(s):  
E. M. Gavrishchuk ◽  
D. V. Savin ◽  
V. B. Ikonnikov ◽  
S. M. Mazavin ◽  
A. I. Suchkov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hot Isostatic Pressing ◽  
Chemical Vapor ◽  
Isostatic Pressing

Comparative Study of Hot-Wire Chemical Vapor Deposition onto (100) Si Near 600°C: Epitaxial and Polycrystalline Silicon Films

2007 ◽  
Vol 989 ◽  
Author(s):  
Charles W. Teplin ◽  
Howard M. Branz ◽  
Kim M. Jones ◽  
Bobby To ◽  
Eugene Iwaniczko ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Preparation ◽  
Chemical Vapor ◽  
Xrd Analysis ◽  
Borosilicate Glasses ◽  
Hot Wire ◽  
Silicon Epitaxy ◽  
Dislocation Defects ◽  
Polycrystalline Silicon Films

AbstractPreviously, we reported improved silicon epitaxy by hot-wire chemical vapor deposition (HWCVD) between about 600 and 650°C. Such temperatures are compatible with the thickening of large-grained Si seed layers on borosilicate glasses or other inexpensive substrates. Here, we provide detailed real-time spectroscopic ellipsometry (RTSE) and x-ray diffraction (XRD) analysis of two films grown near 600°C. A film grown at 594°C shows breakdown to a polycrystalline phase, while a film grown at 627°C is entirely epitaxial. Transmission electron microscopy (TEM) of this epitaxial film shows dislocation defects that originate at the substrate/film interface, suggesting that an optimized surface preparation could yield lower defect densities.

Nucleation and growth of diamond on cemented carbides by hot-filament chemical vapor deposition

1993 ◽  
Vol 2 (2-4) ◽  
pp. 317-322 ◽  
Author(s):  
A.K. Mehlmann ◽  
A. Fayer ◽  
S.F. Dirnfeld ◽  
Y. Avigal ◽  
R. Porath ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nucleation And Growth ◽  
Cemented Carbides ◽  
Hot Filament

Compatibility Study of Diamond-Like Nanocomposite Thin Films with Hydrazine Propellant for MEMS Microthruster

2009 ◽  
Vol 74 ◽  
pp. 269-272 ◽  
Author(s):  
Pijus Kundu ◽  
A. Ray Chaudhuri ◽  
S. Das ◽  
T.K. Bhattacharyya
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Base Material ◽  
Chemical Vapor ◽  
Compatibility Study ◽  
Nanocomposite Thin Films ◽  
Silicon Based

In this paper, the etching characteristic of diamond like nanocomposite thin films materials in hydrazine has been reported. The experiments have been carried out to explore the compatibility of hydrazine as a propellant with silicon based microthruster. In the reported work, 2″ N-type (100) silicon wafer with 4-6 Ω cm resistivity were used as base material. Diamond-like nanocomposite (DLN) films are deposited on silicon substrate by plasma enhanced chemical vapor deposition (PECVD) process using siloxane or silazane based precursors or their combinations. Thickness of deposited DLN thin films is around 1 µm. DLN samples are treated in 98% hydrazine at 25 °C, 70 °C and 90 °C for different time and etch rates and subsequently the change in refractive index of the DLN films if any has been measured.

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