scholarly journals First Principles Investigation on Thermodynamic Properties and Stacking Fault Energy of Paramagnetic Nickel at High Temperatures

Metals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 319
Author(s):  
Jing Zhang ◽  
Pavel A. Korzhavyi

Reliable data on the temperature dependence of thermodynamic properties of alloy phases are very useful for modeling the behavior of high-temperature materials such as nickel-based superalloys. Moreover, for predicting the mechanical properties of such alloys, additional information on the energy of lattice defects (e.g., stacking faults) at high temperatures is highly desirable, but difficult to obtain experimentally. In this study, we use first-principles calculations, in conjunction with a quasi-harmonic Debye model, to evaluate the Helmholtz free energy of paramagnetic nickel as a function of temperature and volume, taking into account the electronic, magnetic, and vibrational contributions. The thermodynamic properties of Ni, such as the equilibrium lattice parameter and elastic moduli, are derived from the free energy in the temperature range from 800 to 1600 K and compared with available experimental data. The derived temperature dependence of the lattice parameter is then used for calculating the energies of intrinsic and extrinsic stacking faults in paramagnetic Ni. The stacking fault energies have been evaluated according to three different methodologies, the axial-next-nearest-neighbor Ising (ANNNI) model, the tilted supercell approach, and the slab supercell approach. The results show that the elastic moduli and stacking fault energies of Ni decrease with increasing temperature. This “softening” effect of temperature on the mechanical properties of nickel is mainly due to thermal expansion, and partly due to magnetic free energy contribution.

1999 ◽  
Vol 578 ◽  
Author(s):  
Satish I. Rao ◽  
Peter M. Hazzledine

AbstractMultilayered Cu-Ni has a peak yield strength four orders of magnitude higher than either Cu or Ni because the multitude of interfaces obstruct glissile dislocations. The barrier strengths of the interfaces may be traced to four mismatches across an interface: modulus, lattice parameter, chemical and slip geometry. This paper describes sample embedded atom method (EAM) simulations of dislocations crossing interfaces, designed to separate the effects of the four mismatches. The results confirm some classical calculations and emphasize the importance of three new effects (i) an interface-chemical effect in which dislocations are trapped by core spreading in the interface, (ii) a coherency-chemical effect caused by coherency strains changing effective stacking fault energies and (iii) a coherency-modulus effect in which coherency strains change elastic moduli (and hence the Koehler stress) significantly.


2018 ◽  
Vol 96 (7) ◽  
pp. 755-759
Author(s):  
T. Todorova ◽  
J.W. Zwanziger

Using first-principles calculations, the effects of intrinsic stacking faults, elastic moduli, and diffusivity on the creep rates of aluminum alloys Al–X (X = Sc, Nb, or Mo) have been investigated. The calculated stacking fault energies of dilute Al show stabilization in the case of Sc and destabilization in the case of Mo and Nb. Although all three impurities confer stiffer elastic properties, Sc appears to retain the ductility of Al but Mo and Nb push the system in the brittle regime. Also, Mo and Nb strongly increase the activation barrier to diffusion, leading to much reduced creep. The results indicate that Mo and Nb can be used in Al alloys to improve elastic properties and creep resistance but only at very low levels, before brittleness becomes an issue.


Entropy ◽  
2018 ◽  
Vol 20 (9) ◽  
pp. 655 ◽  
Author(s):  
Yuji Ikeda ◽  
Fritz Körmann ◽  
Isao Tanaka ◽  
Jörg Neugebauer

Medium and high entropy alloys (MEAs and HEAs) based on 3d transition metals, such as face-centered cubic (fcc) CrCoNi and CrMnFeCoNi alloys, reveal remarkable mechanical properties. The stacking fault energy (SFE) is one of the key ingredients that controls the underlying deformation mechanism and hence the mechanical performance of materials. Previous experiments and simulations have therefore been devoted to determining the SFEs of various MEAs and HEAs. The impact of local chemical environment in the vicinity of the stacking faults is, however, still not fully understood. In this work, we investigate the impact of the compositional fluctuations in the vicinity of stacking faults for two prototype fcc MEAs and HEAs, namely CrCoNi and CrMnFeCoNi by employing first-principles calculations. Depending on the chemical composition close to the stacking fault, the intrinsic SFEs vary in the range of more than 150 mJ/m 2 for both the alloys, which indicates the presence of a strong driving force to promote particular types of chemical segregations towards the intrinsic stacking faults in MEAs and HEAs. Furthermore, the dependence of the intrinsic SFEs on local chemical fluctuations reveals a highly non-linear behavior, resulting in a non-trivial interplay of local chemical fluctuations and SFEs. This sheds new light on the importance of controlling chemical fluctuations via tuning, e.g., the annealing condition to obtain the desired mechanical properties for MEAs and HEAs.


2012 ◽  
Vol 717-720 ◽  
pp. 415-418
Author(s):  
Yoshitaka Umeno ◽  
Kuniaki Yagi ◽  
Hiroyuki Nagasawa

We carry out ab initio density functional theory calculations to investigate the fundamental mechanical properties of stacking faults in 3C-SiC, including the effect of stress and doping atoms (substitution of C by N or Si). Stress induced by stacking fault (SF) formation is quantitatively evaluated. Extrinsic SFs containing double and triple SiC layers are found to be slightly more stable than the single-layer extrinsic SF, supporting experimental observation. Effect of tensile or compressive stress on SF energies is found to be marginal. Neglecting the effect of local strain induced by doping, N doping around an SF obviously increase the SF formation energy, while SFs seem to be easily formed in Si-rich SiC.


Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 364 ◽  
Author(s):  
Lili Liu ◽  
Liwan Chen ◽  
Youchang Jiang ◽  
Chenglin He ◽  
Gang Xu ◽  
...  

The volume versus temperature relations for Ni 3 Si and Ni 3 Ge are obtained by using the first principles calculations combined with the quasiharmonic approach. Based on the equilibrium volumes at temperature T, the temperature dependence of the elastic constants, generalized stacking fault energies and generalized planar fault energies of Ni 3 Si and Ni 3 Ge are investigated by first principles calculations. The elastic constants, antiphase boundary energies, complex stacking fault energies, superlattice intrinsic stacking fault energies and twinning energy decrease with increasing temperature. The twinnability of Ni 3 Si and Ni 3 Ge are examined using the twinnability criteria. It is found that their twinnability decrease with increasing temperature. Furthermore, Ni 3 Si has better twinnability than Ni 3 Ge at different temperatures.


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