scholarly journals Optical and Electrical Performance of MOS-Structure Silicon Solar Cells with Antireflective Transparent ITO and Plasmonic Indium Nanoparticles under Applied Bias Voltage

Materials ◽  
2016 ◽  
Vol 9 (8) ◽  
pp. 682 ◽  
Author(s):  
Wen-Jeng Ho ◽  
Ruei-Siang Sue ◽  
Jian-Cheng Lin ◽  
Hong-Jang Syu ◽  
Ching-Fuh Lin
Keyword(s):  
Solar Cells ◽  
Bias Voltage ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Mos Structure ◽  
Indium Nanoparticles

scholarly journals Influence of Applied Bias Voltage on the Composition, Structure, and Properties of Ti:Si-Codoped a-C:H Films Prepared by Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jinlong Jiang ◽  
Qiong Wang ◽  
Yubao Wang ◽  
Zhang Xia ◽  
Hua Yang ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Tribological Properties ◽  
Structure And Properties ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Methane Mixture ◽  
Composition Structure

The titanium- and silicon-codoped a-C:H films were prepared at different applied bias voltage by magnetron sputtering TiSi target in argon and methane mixture atmosphere. The influence of the applied bias voltage on the composition, surface morphology, structure, and mechanical properties of the films was investigated by XPS, AFM, Raman, FTIR spectroscopy, and nanoindenter. The tribological properties of the films were characterized on an UMT-2MT tribometer. The results demonstrated that the film became smoother and denser with increasing the applied bias voltage up to −200 V, whereas surface roughness increased due to the enhancement of ion bombardment as the applied bias voltage further increased. The sp3carbon fraction in the films monotonously decreased with increasing the applied bias voltage. The film exhibited moderate hardness and the superior tribological properties at the applied bias voltage of −100 V. The tribological behaviors are correlated to the H/E or H3/E2ratio of the films.

scholarly journals Laser-Induced Growth of Titanium Nitride Microcolumns on Biased Titanium Targets

2005 ◽  
Vol 20 (1) ◽  
pp. 62-67 ◽  
Author(s):  
E. György ◽  
A. Pérez del Pino ◽  
P. Serra ◽  
J.L. Morenza
Keyword(s):  
Bias Voltage ◽  
Single Pulse ◽  
Laser Pulses ◽  
High Repetition Rate ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Surface Microrelief ◽  
High Repetition ◽  
Melting Threshold ◽  
Biased Samples

Titanium targets with a bias voltage ranging from −500 to +500 V were submitted to multipulse high repetition rate Nd:yttrium aluminum garnet (YAG; λ = 1.064 μm, τ ∼ 300 ns, ν = 30 kHz) laser irradiations in nitrogen at intensity values below the single-pulse melting threshold. The morphology of the TiN structures formed under the cumulative action of the laser pulses on the surface of the unbiased and biased targets was investigated by profilometry and scanning electron microscopy. Under these irradiation conditions, a specific columnar surface microrelief developed. The height of the microcolumns reached about 10–15 μm, and their diameter about 1–2 μm. The development of TiN microcolumns was enhanced by the applied bias voltage. The enhancement in the negative biased samples was stronger than that in the positive biased ones.

Infrared Electroabsorption Spectra in Amorphous Silicon Solar Cells

1999 ◽  
Vol 557 ◽  
Author(s):  
J. H. Lyou ◽  
Eric A. Schiff ◽  
Steven S. Hegedus ◽  
S. Guha ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Infrared Spectrum ◽  
Amorphous Silicon ◽  
Optical Transition ◽  
Silicon Solar Cells ◽  
Reverse Bias Voltage ◽  
Dangling Bond ◽  
Applied Bias ◽  
Infrared Band ◽  
Peak Energy

AbstractWe report measurements of the infrared spectrum detected by modulating the reverse-bias voltage across amorphous silicon pin solar cells and Schottky barrier diodes. We find a band with a peak energy of 0.8 eV. The existence of this band has not, to our knowledge, been reported previously. The strength of the infrared band depends linearly upon applied bias, as opposed to the quadratic dependence for interband electroabsorption in amorphous silicon.The band's peak energy agrees fairly well with the known optical transition energies for dangling bond defects, but the linear dependence on bias and the magnitude of the signal are surprising if interpreted using an analogy to interband electroabsorption. A model based on absorption by defects near the n/i interface of the diodes accounts well for the infrared spectrum.

Silver Paste with Nano-sized Glass Frits for Silicon Solar Cells

2014 ◽  
Vol 2014 (1) ◽  
pp. 000873-000876
Author(s):  
Yu-Chou Shih ◽  
Yue Shao ◽  
Yeong-Her Lin ◽  
Frank G. Shi
Keyword(s):  
Solar Cells ◽  
Fossil Fuels ◽  
Interfacial Structure ◽  
Electrical Performance ◽  
Silicon Solar Cells ◽  
Firing Process ◽  
Manufacturing Cost ◽  
Type Silicon ◽  
Specific Contact ◽  
Silver Electrodes

Scientists are looking for alternatives to fossil fuels as energy source in order to reduce the environmental issues. Solar energy is one of the candidates that have attracted our attention. Monocrystalline and polycrystalline silicon materials are the most common ones for solar cell panels, and one of the key properties of silicon solar cells is the interfacial resistivity between the front silver electrodes and the n-type silicon emitters. The interfacial resistivity is hugely affected by the interfacial structure between silver electrodes and n-type silicon emitters, which plays a very substantial role for the electrical and mechanical properties of the fabricated silicon solar cells. Previous studies show that the residual glass frits layers at the Ag/Si interfaces after the firing process will dramatically increase the contact resistance and this phenomenon subsequently leads to degradation in the overall efficiency of the silicon solar cells. In this study, nano-sized glass frits were employed to improve the interfacial conductivity. Transfer length method (TLM) was applied to evaluate the electrical performance of samples made by different glass frits. Because of the excellent etching ability of nano-sized glass frits, the total amount of isolating compositions can be reduced and therefore there is less residual ceramic at the interfaces. For samples made with nano-sized glass frits, the specific contact resistivity was found to be only 40% of that of samples made with micro-sized glass frits after otherwise identical processing. Our results show that nano-sized glass frits can provide better energy efficiency, less processing time and lower manufacturing cost.

scholarly journals Plasmonic Light Scattering in Textured Silicon Solar Cells with Indium Nanoparticles from Normal to Non-Normal Light Incidence

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 737 ◽  
Author(s):  
Wen-Jeng Ho ◽  
Jian-Cheng Lin ◽  
Jheng-Jie Liu ◽  
Chien-Wu Yeh ◽  
Hong-Jhang Syu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Light Scattering ◽  
Silicon Solar Cells ◽  
Normal Light ◽  
Indium Nanoparticles

scholarly journals Simulation of a Complete Chain of QCA Cells with Realistic Potentials

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 149-153
Author(s):  
M. Girlanda ◽  
M. Macucci
Keyword(s):  
Numerical Simulation ◽  
Bias Voltage ◽  
Polarization State ◽  
Applied Bias ◽  
Applied Bias Voltage ◽  
Voltage Unbalance ◽  
Complete Chain ◽  
A Chain ◽  
Realistic Potentials

We present a numerical simulation of the operation of a chain of 3 Quantum Cellular Automanton (QCA) cells, with the inclusion of a realistic procedure to enforce, with an externally applied bias voltage unbalance, the polarization of the first cell. The polarization state is shown to propagate correctly, as long as the bias unbalance applied to the electrodes of the first cell is not so large as to directly perturb nearby cells. The addition of dummy cells is needed to balance the asymmetries existing at the ends of a chain: this is an indication of further difficulties, that may become relevant if fabrication of more complex arrays is attempted.

Effects of applied bias voltage on the properties of a-C:H films

1996 ◽  
Vol 78 (1-3) ◽  
pp. 31-36 ◽  
Author(s):  
Yin Dachuan ◽  
Xu Niankan ◽  
Liu Zhengtang ◽  
Han Yong ◽  
Zheng Xiulin
Keyword(s):  
Bias Voltage ◽  
Applied Bias ◽  
Applied Bias Voltage
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