scholarly journals Nanotextured Shrink Wrap Superhydrophobic Surfaces by Argon Plasma Etching

Materials ◽  
2016 ◽  
Vol 9 (3) ◽  
pp. 196 ◽  
Author(s):  
Jolie Nokes ◽  
Himanshu Sharma ◽  
Roger Tu ◽  
Monica Kim ◽  
Michael Chu ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Argon Plasma ◽  
Superhydrophobic Surfaces

scholarly journals Argon plasma etching of fused silica substrates for manufacturing high laser damage resistance optical interference coatings

2017 ◽  
Vol 7 (10) ◽  
pp. 3598 ◽  
Author(s):  
Kęstutis Juškevičius ◽  
Rytis Buzelis ◽  
Giedrius Abromavičius ◽  
Romanas Samuilovas ◽  
Saulė Abbas ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Argon Plasma ◽  
Fused Silica ◽  
Laser Damage ◽  
Optical Interference ◽  
Damage Resistance ◽  
High Laser ◽  
Silica Substrates

Anti-Reflective Structure of PMMA/Glass Fiber Membrane Produce by Argon Plasma Etching and Variation of Transmitted Intensity

2012 ◽  
Vol 627 ◽  
pp. 864-868
Author(s):  
T.L. Hsin ◽  
W.H. Hsing ◽  
Nour Chuang
Keyword(s):  
Glass Fiber ◽  
Output Power ◽  
Plasma Etching ◽  
Light Transmission ◽  
Membrane Surface ◽  
Argon Plasma ◽  
Process Time ◽  
Transmitted Intensity ◽  
Fiber Membrane ◽  
The Impact

The aim of this research is to increase the membrane’s transmitted intensities; it used Argon plasma etching to process the anti-reflective structure on PMMA/glass fiber membrane surface. The anti-reflective structure could increase the light transmission at the identical specification of membrane’s basic cloth. Membrane’s transmitted intensities can directly affect it products competitiveness. The parameter of experimentation set with distance between sample and RF plate are 19 or 5.5 centimeters, plasma output power is 270, 240, 210 Watt respectively, each process time is 6, 12, 18, 24, 30 seconds. In this stage, the best transmitted intensity of parameter is 19cm, 210W, 30sec; it increased 2.4 % than non-treatment sample. The summary of this study, decreased plasma output power would reduce the impact extent of plasma gas but uniformity of structure should increase. Decreased the distance between sample and RF plate can avoided the degeneration of energy, reinforced the problem of insufficient etching and reduced the turbulence.

scholarly journals Self-formation of lead telluride nanostructures during argon plasma etching of single-crystal wafers

2014 ◽  
Vol 541 ◽  
pp. 012017 ◽  
Author(s):  
G A Dubov ◽  
S P Zimin ◽  
E S Gorlachev ◽  
I I Amirov ◽  
V V Naumov ◽  
...  
Keyword(s):  
Single Crystal ◽  
Plasma Etching ◽  
Lead Telluride ◽  
Argon Plasma ◽  
Self Formation

scholarly journals Aligned Carbon Nanotubes Array by DC Glow Plasma Etching for Supercapacitor

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Yongfeng Luo ◽  
Xi Li ◽  
Zhiqiang Gong ◽  
Zhongzhi Sheng ◽  
Xiaofang Peng ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Plasma Etching ◽  
Electrode Materials ◽  
Argon Plasma ◽  
Carboxyl Group ◽  
Aligned Carbon Nanotubes ◽  
Pure Carbon ◽  
Glow Plasma

To open the end of carbon nanotubes and make these ends connect with functional carboxyl group, aligned carbon nanotubes (CNTs) arrays was etched by DC glow oxygen-argon plasma. With these open-ended carbon nanotubes array as electrode materials to build supercapacitor, we found that the capacity (32.2 F/g) increased significantly than that of pure carbon nanotubes (6.7 F/g).

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