scholarly journals Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

Materials ◽  
2015 ◽  
Vol 8 (12) ◽  
pp. 8868-8876 ◽  
Author(s):  
Marietta Seifert ◽  
Gayatri Rane ◽  
Benjamin Kirbus ◽  
Siegfried Menzel ◽  
Thomas Gemming
Keyword(s):  
High Temperature ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
High Vacuum ◽  
Surface Effects ◽  
High Temperature Annealing ◽  
Acoustic Wave Devices

In situ high-temperature characterization of AlN-based surface acoustic wave devices

2013 ◽  
Vol 114 (1) ◽  
pp. 014505 ◽  
Author(s):  
Thierry Aubert ◽  
Jochen Bardong ◽  
Ouarda Legrani ◽  
Omar Elmazria ◽  
M. Badreddine Assouar ◽  
...  
Keyword(s):  
High Temperature ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Acoustic Wave Devices

Surface acoustic wave devices based on AlN/sapphire structure for high temperature applications

2010 ◽  
Vol 96 (20) ◽  
pp. 203503 ◽  
Author(s):  
Thierry Aubert ◽  
Omar Elmazria ◽  
Badreddine Assouar ◽  
Laurent Bouvot ◽  
Mourad Oudich
Keyword(s):  
High Temperature ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Acoustic Wave Devices ◽  
Temperature Applications

scholarly journals Mo-La2O3 Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices

Materials ◽  
2019 ◽  
Vol 12 (17) ◽  
pp. 2651 ◽  
Author(s):  
Siegfried B. Menzel ◽  
Marietta Seifert ◽  
Abhinav Priyadarshi ◽  
Gayatri K. Rane ◽  
Eunmi Park ◽  
...  
Keyword(s):  
High Temperature ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Lanthanum Oxide ◽  
High Vacuum ◽  
High Temperature Stability ◽  
Multilayer Systems ◽  
Si Substrates ◽  
Acoustic Wave Sensor ◽  
Sensor Devices

Developing advanced thin film materials is the key challenge in high-temperature applications of surface acoustic wave sensor devices. One hundred nanometer thick (Mo-La 2 O 3 ) multilayer systems were fabricated at room temperature on thermally oxidized (100) Si substrates (SiO 2 /Si) to study the effect of lanthanum oxide on the electrical resistivity of molybdenum thin films and their high-temperature stability. The multilayer systems were deposited by the magnetron sputter deposition of extremely thin (≤1 nm) La interlayers in between adjacent Mo layers. After deposition of each La layer the process was interrupted for 25 to 60 min to oxidize the La using the residual oxygen in the high vacuum of the deposition chamber. The samples were annealed at 800 ∘ C in high vacuum for up to 120 h. In case of a 1 nm thick La interlayer in-between the Mo a continuous layer of La 2 O 3 is formed. For thinner La layers an interlayer between adjacent Mo layers is observed consisting of a (La 2 O 3 -Mo) mixed structure of molybdenum and nm-sized lanthanum oxide particles. Measurements show that the (Mo-La 2 O 3 ) multilayer systems on SiO 2 /Si substrates are stable at least up to 800 ∘ C for 120 h in high vacuum conditions.

scholarly journals Thin Film Electrodes for High Temperature Surface Acoustic Wave Devices

2011 ◽  
Vol 25 ◽  
pp. 168-171 ◽  
Author(s):  
D. Richter ◽  
S. Sakharov ◽  
E. Forsén ◽  
E. Mayer ◽  
L. Reindl ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Thin Film Electrodes ◽  
Acoustic Wave Devices ◽  
Temperature Surface

Diamond film on Langasite substrate for surface acoustic wave devices operating in high frequency and high temperature

2007 ◽  
Vol 16 (4-7) ◽  
pp. 966-969 ◽  
Author(s):  
M. El Hakiki ◽  
O. Elmazria ◽  
F. Bénédic ◽  
P. Nicolay ◽  
D. Monéger ◽  
...  
Keyword(s):  
High Temperature ◽  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Diamond Film ◽  
High Frequency ◽  
Acoustic Wave Devices
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