scholarly journals Microwave Irradiation Effect on the Dispersion and Thermal Stability of RGO Nanosheets within a Polystyrene Matrix

Materials ◽  
2014 ◽  
Vol 7 (7) ◽  
pp. 5212-5224 ◽  
Author(s):  
Edreese Alsharaeh ◽  
Ali Othman ◽  
Mohammad Aldosari
2013 ◽  
Vol 2013 ◽  
pp. 1-12 ◽  
Author(s):  
Mashael Alshabanat ◽  
Amal Al-Arrash ◽  
Waffa Mekhamer

Polymer nanocomposites of polystyrene matrix containing 10% wt of organo-montmorillonite (organo-MMT) were prepared using the solution method with sonication times of 0.5, 1, 1.5, and 2 hours. Cetyltrimethylammonium bromide (CTAB) is used to modify the montmorillonite clay after saturating its surface with Na+ions. Fourier transform infrared spectroscopy (FTIR), X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) were used to characterize the montmorillonite before and after modification by CTAB. The prepared nanocomposites were characterized using the same analysis methods. These results confirm the intercalation of PS in the interlamellar spaces of organo-MMT with a very small quantity of exfoliation of the silicate layers within the PS matrix of all samples at all studied times of sonication. The thermal stability of the nanocomposites was measured using thermogravimetric analysis (TGA). The results show clear improvement, and the effects of sonication time are noted.


e-Polymers ◽  
2008 ◽  
Vol 8 (1) ◽  
Author(s):  
Feng Peng ◽  
Jun-Li Ren ◽  
Xiao-Feng Sun ◽  
Feng Xu ◽  
Run-Cang Sun ◽  
...  

AbstractRapid phthaloylation and succinylation of wheat straw hemicelluloses with phthaloyl dichloride (PdC) and succinyl chloride (SC) in N,Ndimethylformamide/ lithium chloride (DMF/LiCl) system using N-bromosuccinimide (NBS) as a catalyst was achieved for only 5 minutes at 50 °C by microwave irradiation. The degree of substitution (DS) ranged between 0.43 and 1.47. The effect of the molar ratios of xylose units in hemicelluloses to phthaloyl dichloride or succinyl chloride on the degree of substitution was investigated. It was found that the reactivity of succinyl chloride was higher as compared to Phthaloyl dichloride under similar experimental conditions. 13C NMR studies revealed that the esterification occurred at the C-3 and C-2 positions in the β-D-xylose units of hemicelluloses, but preferentially at C-3 position. However, it should be noted that microwave irradiation did result in more degradation of the macromolecular hemicelluloses than conventional heating technique as shown by a lower thermal stability of the hemicellulosic derivatives obtained by microwave irradiation than those obtained by conventional heating technique.


Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

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