Strained Silicon Photonics

Clemens Schriever; Christian Bohley; Jörg Schilling; Ralf B. Wehrspohn

doi:10.3390/ma5050889

Strained silicon photonics for Pockels effect based modulation

2017 IEEE 14th International Conference on Group IV Photonics (GFP) ◽

10.1109/group4.2017.8082194 ◽

2017 ◽

Author(s):

Mathias Berciano ◽

Pedro Damas ◽

Guillaume Marcaud ◽

Xavier Le Roux ◽

Paul Crozat ◽

...

Keyword(s):

Silicon Photonics ◽

Strained Silicon ◽

Pockels Effect

Download Full-text

Pockels effect in strained silicon photonics (Conference Presentation)

Integrated Optics: Physics and Simulations III ◽

10.1117/12.2268909 ◽

2017 ◽

Author(s):

Laurent Vivien ◽

Mathias Berciano ◽

Pedro Damas ◽

Guillaume Marcaud ◽

Xavier Le Roux ◽

...

Keyword(s):

Silicon Photonics ◽

Strained Silicon ◽

Pockels Effect

Download Full-text

Strained silicon photonics: Recent advances

2016 18th International Conference on Transparent Optical Networks (ICTON) ◽

10.1109/icton.2016.7550430 ◽

2016 ◽

Author(s):

P. Damas ◽

X. Le-Roux ◽

M. Berciano ◽

G. Marcaud ◽

C. Alonso-Ramos ◽

...

Keyword(s):

Silicon Photonics ◽

Strained Silicon ◽

Recent Advances

Download Full-text

Fabrication and Evaluation of Self-organized Er2SiO5 Crystalline Films for the 1.5ƒm Emitters and Amplifiers in Silicon Photonics

10.1557/proc-1111-d05-04 ◽

2008 ◽

Author(s):

Tadamasa Kimura ◽

Hideo Isshiki

Keyword(s):

Silicon Photonics ◽

Self Organized ◽

Crystalline Films

Download Full-text

Hybrid Valence Bands in Strained-Layer Heterostructures grown on Relaxed SiGe Virtual Substrates

MRS Proceedings ◽

10.1557/proc-765-d4.10/g1.10 ◽

2003 ◽

Vol 765 ◽

Author(s):

Minjoo L. Lee ◽

Eugene A. Fitzgerald

Keyword(s):

Strained Silicon ◽

Strained Layer ◽

Dual Channel ◽

Enhanced Mobility ◽

Valence Bands ◽

Almost All

AbstractThe use of alternative channel materials such as germanium [1,2] and strained silicon (ε-Si) [3-5] is increasingly being considered as a method for improving the performance of MOSFETs. While ε-Si grown on relaxed Si1-x Gex is drawing closer to widespread commercialization, it is currently believed that almost all of the performance benefit in CMOS implementations will derive from the enhanced mobility of the n -MOSFET [5]. In this paper, we demonstrate that ε-Si p -MOSFETs can be engineered to exhibit mobility enhancements that increase or remain constant as a function of inversion density. We have also designed and fabricated ε-Si / ε-Ge dual-channel p -MOSFETs exhibiting mobility enhancements of 10 times. These p -MOSFETs can be integrated on the same wafers as ε-Si n -MOSFETs, making symmetric-mobility CMOS possible.

Download Full-text

Introduction of a Novel Sample Preparation Technique for the Failure Analysis of Silicon Integrated Photonics Modules

ISTFA 2019: Conference Proceedings from the 45th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2019p0508 ◽

2019 ◽

Author(s):

Pradip Sairam Pichumani ◽

Fauzia Khatkhatay

Keyword(s):

Sample Preparation ◽

Failure Analysis ◽

Silicon Photonics ◽

Cmos Technology ◽

Single Step ◽

Oxide Semiconductor ◽

Disruptive Technology ◽

Preparation Technique ◽

Test Vehicle ◽

Sample Preparation Technique

Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive analysis methods. This work provides an example of a single step sample preparation technique that will reduce the turnaround time while simultaneously increasing the scope of analysis techniques.

Download Full-text