scholarly journals Hydrogen Permeation Behavior of Zirconium Nitride Film on Zirconium Hydride

Materials ◽  
2022 ◽  
Vol 15 (2) ◽  
pp. 550
Author(s):  
Wenke Wang ◽  
Guoqing Yan ◽  
Jiandong Zhang ◽  
Zhaohui Ma ◽  
Lijun Wang ◽  
...  

Hydrogen permeation barrier plays an important role in reducing hydrogen loss from zirconium hydride matrix when used as neutron moderator. Here, a composite nitride film was prepared on zirconium hydride by in situ reaction method in nitrogen atmosphere. The phase structure, morphology, element distribution, and valence states of the composite film were investigated by XRD, SEM, AES, and XPS analysis. It was found that the composite nitride film was continuous and dense with about 1.6 μm thickness; the major phase of the film was ZrN, with coexistence of ZrO2, ZrO, and ZrN0.36H0.8; and Zr-C, Zr-O, Zr-N, O-H, and N-H bonds were detected in the film. The existence of ZrN0.36H0.8 phase and the bonds of O-H and N-H revealed that the nitrogen and oxygen in the film could capture hydrogen from the zirconium hydride matrix. The hydrogen permeation performance of nitride film was compared with oxide film by permeation reduction factor (PRF), vacuum thermal dehydrogenation (VTD), and hydrogen permeation rate (HPR) methods, and the results showed that the hydrogen permeation barrier effects of nitride film were better than that of oxide film. The zirconium nitride film would be a potential candidate for hydrogen permeation barrier on the surface of zirconium hydride.

Rare Metals ◽  
2008 ◽  
Vol 27 (5) ◽  
pp. 473-478 ◽  
Author(s):  
W CHEN ◽  
L WANG ◽  
L HAN ◽  
S CHEN

2018 ◽  
Vol 33 (7) ◽  
pp. 793 ◽  
Author(s):  
ZHANG Peng-Fei ◽  
YAN Shu-Fang ◽  
CHEN Wei-Dong ◽  
LI Shi-Jiang ◽  
GENG Yan-Hua ◽  
...  

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.


Rare Metals ◽  
2016 ◽  
Vol 36 (1) ◽  
pp. 55-60 ◽  
Author(s):  
Ming Wu ◽  
Yang Chen ◽  
Jia-Qing Peng ◽  
Guo-Qing Yan ◽  
Yu-Pu Sun ◽  
...  

2013 ◽  
Vol 534 ◽  
pp. 673-679 ◽  
Author(s):  
Z. Qin ◽  
Y. Zeng ◽  
D.W. Shoesmith

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