scholarly journals Materials and Processes for Schottky Contacts on Silicon Carbide

Materials ◽  
2021 ◽  
Vol 15 (1) ◽  
pp. 298
Author(s):  
Marilena Vivona ◽  
Filippo Giannazzo ◽  
Fabrizio Roccaforte
Keyword(s):  
Silicon Carbide ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Barrier Properties ◽  
Essential Elements ◽  
Schottky Contacts ◽  
Schottky Barriers ◽  
New Class ◽  
Fundamental Properties

Silicon carbide (4H-SiC) Schottky diodes have reached a mature level of technology and are today essential elements in many applications of power electronics. In this context, the study of Schottky barriers on 4H-SiC is of primary importance, since a deeper understanding of the metal/4H-SiC interface is the prerequisite to improving the electrical properties of these devices. To this aim, over the last three decades, many efforts have been devoted to developing the technology for 4H-SiC-based Schottky diodes. In this review paper, after a brief introduction to the fundamental properties and electrical characterization of metal/4H-SiC Schottky barriers, an overview of the best-established materials and processing for the fabrication of Schottky contacts to 4H-SiC is given. Afterwards, besides the consolidated approaches, a variety of nonconventional methods proposed in literature to control the Schottky barrier properties for specific applications is presented. Besides the possibility of gaining insight into the physical characteristics of the Schottky contact, this subject is of particular interest for the device makers, in order to develop a new class of Schottky diodes with superior characteristics.

Electrical Nanocharacterization of Epitaxial Graphene/Silicon Carbide Schottky Contacts

2014 ◽  
Vol 778-780 ◽  
pp. 1142-1145 ◽  
Author(s):  
Filippo Giannazzo ◽  
Stefan Hertel ◽  
Andreas Albert ◽  
Antonino La Magna ◽  
Fabrizio Roccaforte ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Photoelectron Spectroscopy ◽  
Schottky Contact ◽  
Epitaxial Graphene ◽  
Schottky Contacts ◽  
Specific Contact Resistance ◽  
Monolayer Graphene ◽  
Conductive Atomic Force Microscopy

Epitaxial graphene fabricated by thermal decomposition of the Si-face of silicon carbide (SiC) forms a defined interface to the SiC substrate. As-grown monolayer graphene with buffer layer establishes an ohmic interface even to low-doped (e. g. [N] ≈ 1015 cm-3) SiC, and a specific contact resistance as low as ρC = 5.9×10-6 Ωcm2 can be achieved on highly n-doped SiC layers. After hydrogen intercalation of monolayer graphene, the so-called quasi-freestanding graphene forms a Schottky contact to n-type SiC with a Schottky barrier height of 1.5 eV as determined from C-V analysis and core level photoelectron spectroscopy (XPS). This value, however, strongly deviates from the respective value of less than 1 eV determined from I-V measurements. It was found from conductive atomic force microscopy (C-AFM) that the Schottky barrier is locally lowered on other crystal facets located at substrate step edges. For very small Schottky contacts, the barrier height extracted from I-V curves approaches the value of 1.5 eV from C-V and XPS.

3.3 kV Rated Silicon Carbide Schottky Diodes with Epitaxial Field Stop Ring

2011 ◽  
Vol 679-680 ◽  
pp. 555-558 ◽  
Author(s):  
Konstantin Vassilevski ◽  
Irina P. Nikitina ◽  
Alton B. Horsfall ◽  
Nicolas G. Wright ◽  
C. Mark Johnson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Blocking Layer ◽  
Donor Concentration ◽  
Ion Etching ◽  
Ambient Temperatures ◽  
Heavily Doped ◽  
The Impact

3.3 kV rated 4H-SiC diodes with nickel monosilicide Schottky contacts and 2-zone JTE regions were fabricated on commercial epitaxial wafers having a 34 m thick blocking layer with donor concentration of 2.2×1015 cm-3. The diodes were fabricated with and without additional field stop rings to investigate the impact of practically realizable stopper rings on the diode blocking characteristics. The field stop ring was formed by reactive ion etching of heavily doped epitaxial capping layer. The diodes with field stop rings demonstrated significantly higher yield and reduction of reverse leakage current. The diodes demonstrated blocking voltages in excess of 4.0 kV and very low change of leakage current at ambient temperatures up to 200 °C.

Electrical Characterization of Ni-Silicide Schottky Contacts on SiC for High Performance Temperature Sensor

2015 ◽  
Vol 821-823 ◽  
pp. 436-439 ◽  
Author(s):  
Razvan Pascu ◽  
Gheorghe Pristavu ◽  
Gheorghe Brezeanu ◽  
Florin Draghici ◽  
Marian Badila ◽  
...  
Keyword(s):  
Barrier Height ◽  
Temperature Sensor ◽  
High Performance ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Post Annealing ◽  
Schottky Device ◽  
Post Annealing Temperature

The electrical behavior and stability of a temperature sensor based on 4H-SiC Schottky diodes using Ni2Si as Schottky contact, are investigated. The ideality factor and the barrier height were found to be strongly dependent on the post-annealing temperature of the Ni contact (which lead to the formation of Ni2Si). A nearly ideal Schottky device, with the barrier height approaching the high value of1.7eV, and a slight temperature dependence, was obtained after an annealing atTA=800°C.This high barrier height proves that Ni2Si is suitable as Schottky contact for temperature sensors, able to reliably operate up to450°C. Sensor sensitivity levels between1.00mV/°Cand2.70 mV/°Chave been achieved.

Electrical Characterization of Chemical Sensors Based on Catalytic Metal Gate - Silicon Carbide Schottky Diodes

1998 ◽  
Vol 264-268 ◽  
pp. 1097-1100 ◽  
Author(s):  
Peter Tobias ◽  
Shinji Nakagomi ◽  
A. Baranzahi ◽  
R. Zhu ◽  
Ingemar Lundström ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Sensors ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Metal Gate ◽  
Catalytic Metal

High Temperature Stable Titanium Carbide Ohmic and Schottky Contacts to SiC

1998 ◽  
Vol 512 ◽  
Author(s):  
C.-M. Zetterling ◽  
M. östling ◽  
L. Norin ◽  
U. Jansson
Keyword(s):  
High Temperature ◽  
Titanium Carbide ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Knudsen Cell ◽  
Vacuum Furnace ◽  
Electrical Measurements ◽  
Low Resistivity

ABSTRACTEpitaxial titanium carbide is investigated as a low resistivity, high temperature stable Ohmic and Schottky contact to 4H and 6H SiC. The titanium carbide films were deposited at 500°C using co-evaporation of titanium (e-beam) and C60 (Knudsen cell) in a UHV system. Schottky diodes and TLM structures were fabricated on low and high doped SiC material respectively. The samples were annealed at 700 °C in a vacuum furnace, and electrical measurements were performed up to 300 °C.

Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations

2011 ◽  
Vol 679-680 ◽  
pp. 453-456
Author(s):  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto ◽  
Edvige Celasco ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Structural Evolution ◽  
Schottky Contacts ◽  
Power Losses ◽  
X Ray ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Power Densities

In this work we studied different Schottky contacts to 4H-SiC with the aim to obtain Schottky Barrier diodes (SBDs) and Junction Barrier Schottky diodes (JBS) able to operate at high temperatures, frequencies and power densities with low power losses. Schottky contacts were fabricated using Mo and Mo/Al layers annealed up to 600 °C using a Rapid Thermal Process (RTP). A comparison with previous results obtained with Ni, Ti and Ti/Al layers annealed up to 400 °C is also proposed. The Schottky contacts were characterized by means of standard Current-Voltage (I-V) and Capacitance-Voltage (C-V) techniques. X-ray Photoelectron Spectroscopy (XPS) analyses were performed in depth profile mode in order to study the structural evolution of the interface Mo/SiC and Al/Mo during annealing treatments. Mo/Al contacts show a lower barrier height and better overall performances in forward polarization when compared to the Ti- and Ni-based contacts, and they are very promising for Schottky contact fabrication on SBD and JBS.

scholarly journals Ferromagnetic Schottky Contact for GaN Based Spin Devices

2021 ◽  
Vol 12 ◽  
pp. 55-60
Author(s):  
Tarkeshwar C. Patil
Keyword(s):  
Barrier Height ◽  
Spin Injection ◽  
Schottky Contact ◽  
Electrical Characterization ◽  
Schottky Contacts ◽  
Zero Bias ◽  
Spin Devices

In this paper, ferromagnetic Schottky contacts for GaN based spin injection are being studied. The electrical characterization of this Co/n-GaN and Fe/n-GaN Schottky contacts showing the zero-bias barrier height comes closer to unity as the temperature is increased. Also, the Richardson constant is extracted for this Schottky contact. Both the zero-bias barrier height and the Richardson constant are verified both experimentally as well as theoretically. Thus, this Schottky contacts will serve as spin injector for GaN based spin devices specifically for GaCrN based devices

Electrical characterization of 4H–SiC Schottky diodes with a RuO2 and a RuWO x Schottky contacts

2007 ◽  
Vol 19 (8-9) ◽  
pp. 783-787 ◽  
Author(s):  
Dalibor Buc ◽  
Lubica Stuchlikova ◽  
Ladislav Harmatha ◽  
Ivan Hotovy
Keyword(s):  
Schottky Diodes ◽  
Electrical Characterization ◽  
Schottky Contacts
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