scholarly journals Anodizing of Hydrogenated Titanium and Zirconium Films

Materials ◽  
2021 ◽  
Vol 14 (24) ◽  
pp. 7490
Author(s):  
Alexander Poznyak ◽  
Andrei Pligovka ◽  
Marco Salerno
Keyword(s):  
Thin Films ◽  
Tartaric Acid ◽  
Thickness Distribution ◽  
Sweep Rate ◽  
Anodic Process ◽  
Current Time ◽  
Voltage Sweep ◽  
Fundamental Possibility ◽  
Anodic Voltage ◽  
Hydrogenation Time

Magnetron-sputtered thin films of titanium and zirconium, with a thickness of 150 nm, were hydrogenated at atmospheric pressure and a temperature of 703 K, then anodized in boric, oxalic, and tartaric acid aqueous solutions, in potentiostatic, galvanostatic, potentiodynamic, and combined modes. A study of the thickness distribution of the elements in fully anodized hydrogenated zirconium samples, using Auger electron spectroscopy, indicates the formation of zirconia. The voltage- and current-time responses of hydrogenated titanium anodizing were investigated. In this work, fundamental possibility and some process features of anodizing hydrogenated metals were demonstrated. In the case of potentiodynamic anodizing at 0.6 M tartaric acid, the increase in titanium hydrogenation time, from 30 to 90 min, leads to a decrease in the charge of the oxidizing hydrogenated metal at an anodic voltage sweep rate of 0.2 V·s−1. An anodic voltage sweep rate in the range of 0.05–0.5 V·s−1, with a hydrogenation time of 60 min, increases the anodizing efficiency (charge reduction for the complete oxidation of the hydrogenated metal). The detected radical differences in the time responses and decreased efficiency of the anodic process during the anodizing of the hydrogenated thin films, compared to pure metals, are explained by the presence of hydrogen in the composition of the samples and the increased contribution of side processes, due to the possible features of the formed oxide morphologies.

Anomalous change of carrier transport property of ferroelectric Hf0.5Zr0.5O2 thin films in the first poling treatment

2022 ◽  
Author(s):  
Yukinori Morita ◽  
Hiroyuki OTA ◽  
Shinji MIGITA
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Transport Property ◽  
Carrier Transport ◽  
Current Flow ◽  
Discontinuity Point ◽  
Voltage Sweep ◽  
Current Voltage ◽  
Carrier Transport Property ◽  
Carrier Transport Properties

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.

Measurement of the thickness distribution and optical constants of non-uniform thin films

2011 ◽  
Vol 22 (8) ◽  
pp. 085104 ◽  
Author(s):  
M Ohlídal ◽  
I Ohlídal ◽  
P Klapetek ◽  
D Nečas ◽  
A Majumdar
Keyword(s):  
Thin Films ◽  
Optical Constants ◽  
Thickness Distribution

FABRICATION AND ELECTRICAL PROPERTIES OF Au/PVDF-TrFE/LaZrOx/Si(100) STRUCTURE

2010 ◽  
Vol 24 (22) ◽  
pp. 4203-4208 ◽  
Author(s):  
HUI-SEONG HAN ◽  
GWANG-GEUN LEE ◽  
BYUNG-EUN PARK
Keyword(s):  
Thin Films ◽  
Polyvinylidene Fluoride ◽  
Oxide Thickness ◽  
Voltage Sweep ◽  
Window Width ◽  
Capacitance Voltage ◽  
Coating Method ◽  
Insulator Layers ◽  
Lanthanum Zirconium Oxide ◽  
P Type

Metal-ferroelectric-insulator-semiconductor structure capacitors with a polyvinylidene fluoride trifluoroethylene (75/25) (PVDF-TrFE) ferroelectric and a lanthanum zirconium oxide ( LaZrO x) insulator layers were fabricated on a p-type Si(100) substrate in this work. The thin films were prepared using the spin-coating method. The LaZrO x thin films were crystallized at 750°C for 30 min in an O 2 ambient. Negligible hysteresis was observed from the C–V (capacitance-voltage) characteristic of the LaZrO x/ Si structure. The equivalent oxide thickness (EOT) was about 8.2 nm. Then the PVDF-TrFE film was spin-coated on the LaZrO x/ Si structure. To crystallize the PVDF-TrFE, the structure was annealed at 165°C for 30 min. The memory window width in the C–V curve of the Au/PVDF - TrFE/LaZrO x/ Si structure was about 4 V for a voltage sweep of ±5 V, and the leakage current density was about 10-8 A/cm 2 at 35 kV/cm for a 100-nm-thick film.

FLUX DYNAMICS IN YBCO THIN FILMS

2000 ◽  
Vol 14 (27n28) ◽  
pp. 949-959
Author(s):  
S. K. HASANAIN ◽  
UZMA KHALIQUE
Keyword(s):  
Thin Films ◽  
Power Law ◽  
Magnetic Measurements ◽  
Sweep Rate ◽  
Flux Dynamics ◽  
Activation Barriers ◽  
Current Dependence ◽  
Ybco Thin Films ◽  
Relaxation Measurements ◽  
The Moment

Magnetic measurements are reported on YBCO thin films (d<500 nm ) in the perpendicular geometry, H‖c. By analyzing the sweep rate dependence of the magnetization for temperatures 35 ≤ T ≤ 77 K and H≤10 kOe , we find that the moment has a power law dependence on the sweep rate. This dependence is indicative of power law E(J) characteristics for these thin films and from this a logarithmic current dependence of the activation potential U(J) is inferred. We find that our magnetic relaxation measurements are also consistent with the logarithmic U(J) dependence obtained from the sweep rate measurements. Activation barriers for flux creep are determined for various temperatures and their field dependence is discussed.

Internal Stress of ZnO thin Films Caused by Thickness Distribution and Crystallinity

1998 ◽  
Vol 518 ◽  
Author(s):  
M. Takeuchi ◽  
K. Inoue ◽  
Y. Yoshino ◽  
K. Ohwada
Keyword(s):  
Thin Films ◽  
Stress Distribution ◽  
Thickness Distribution ◽  
Zno Thin Films ◽  
Optimum Thickness ◽  
X Ray Diffraction ◽  
Axis Orientation ◽  
X Ray ◽  
Argon Ions ◽  
Cosine Law

AbstractThe improvement of thickness distribution and crystallinity in ZnO thin films prepared by radio frequency (rf) planer magnetron sputtering has been studied. Optimum thickness distribution of less than ± 2.2% in a 3-inch wafer is obtained by changing the substrate angle to the ZnO target and is in accordance with cosine law. The c-axis orientation perpendicular to the silicon substrate is confirmed by x-ray diffraction. The stress of ZnO thin films is larger than 0.3GPa and its distribution is independent of the substrate angle that is set at a slant to the optimum angle for thickness distribution. These results indicate that thickness distribution of ZnO thin films heavily depends on the substrate angle, while the stress and its distribution are independent of the setting angle of the substrate. Stress distribution is attributed to the distribution of argon ions and sputtered molecules impinging a wafer.

An experimental study and modeling of the thickness distribution in pulsed laser deposited ferroelectric thin films

1996 ◽  
Vol 96-98 ◽  
pp. 831-835 ◽  
Author(s):  
M. Tyunina ◽  
K. Sreenivas ◽  
C. Bjormander ◽  
J. Wittborn ◽  
K.V. Rao
Keyword(s):  
Thin Films ◽  
Experimental Study ◽  
Thickness Distribution ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films
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