scholarly journals The Electrical and Thermal Transport Properties of La-Doped SrTiO3 with Sc2O3 Composite

Materials ◽  
2021 ◽  
Vol 14 (21) ◽  
pp. 6279
Author(s):  
Kai Guo ◽  
Fan Yang ◽  
Tianyao Weng ◽  
Jianguo Chen ◽  
Jiye Zhang ◽  
...  

Donor-doped strontium titanate (SrTiO3) is one of the most promising n-type oxide thermoelectric materials. Routine doping of La at Sr site can change the charge scattering mechanism, and meanwhile can significantly increase the power factor in the temperature range of 423–773 K. In addition, the introduction of Sc partially substitutes Sr, thus further increasing the electron concentration and optimizing the electrical transport properties. Moreover, the excess Sc in the form of Sc2O3 composite suppresses multifrequency phonon transport, leading to low thermal conductivity of κ = 3.78 W·m−1·K−1 at 773 K for sample Sr0.88La0.06Sc0.06TiO3 with the highest doping content. Thus, the thermoelectric performance of SrTiO3 can be significantly enhanced by synergistic optimization of electrical transport and thermal transport properties via cation doping and composite engineering.

2021 ◽  
Vol 8 ◽  
Author(s):  
Xiaolian Wang ◽  
Wei Feng ◽  
Chen Shen ◽  
Zhehao Sun ◽  
Hangbo Qi ◽  
...  

Electronic fitness function (EFF, achieved by the electrical transport properties) as a new quantity to estimate thermoelectric (TE) performance of semiconductor crystals is usually used for screening novel TE materials. In recent years, because of the high EFF values, an increasing number of two-dimensional materials have been predicted to have the potential for TE applications via high-throughput calculations. Among them, the GeS2 monolayer has many interesting physical properties and is being used for industrial applications. Hence, in this work, we systematically investigated the TE performance, including both electronic and thermal transport properties, of the GeS2 monolayer with first-principles calculations. The results show that the structure of the GeS2 monolayer at 700 K is thermally unstable, so we study its TE performance only at 300 and 500 K. As compared with other typical TE monolayers, the GeS2 monolayer exhibits excellent electronic transport properties but a relatively high lattice thermal conductivity of 5.71 W m−1 K−1 at 500 K, and thus an unsatisfactory ZT value of 0.23. Such a low ZT value indicates that it is necessary to consider not only the electron transport properties but also the thermal transport properties to screen the thermoelectric materials with excellent performance through high-throughput calculations.


2008 ◽  
Author(s):  
E. S. Landry ◽  
A. J. H. McGaughey

Si/Si1−xGex superlattices are promising candidates for thermoelectric energy conversion applications [1, 2], as the phonon transport through them can be inhibited while maintaining desirable electrical transport properties. No comprehensive experimental study has been performed to map the thermal conductivity design space accessible by Si/Ge nanocomposites. By using atomistic modeling tools, interesting areas of the design space can be identified and then further explored experimentally.


2011 ◽  
Vol 110 (8) ◽  
pp. 083914 ◽  
Author(s):  
J. C. Lin ◽  
Y. N. Huang ◽  
X. B. Hu ◽  
W. J. Lu ◽  
B. C. Zhao ◽  
...  

2018 ◽  
Author(s):  
Xiaoxiang Yu ◽  
Ruiyang Li ◽  
Takuma Shiga ◽  
Lei Feng ◽  
Junichiro Shiomi ◽  
...  

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