scholarly journals Influence of Temperature on Void Collapse in Single Crystal Nickel under Hydrostatic Compression

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2369
Author(s):  
Mahesh R. G. Prasad ◽  
Anupam Neogi ◽  
Napat Vajragupta ◽  
Rebecca Janisch ◽  
Alexander Hartmaier
Keyword(s):  
Single Crystal ◽  
Strain Hardening ◽  
Elevated Temperatures ◽  
Hot Isostatic Pressing ◽  
Dislocation Motion ◽  
Hydrostatic Compression ◽  
Dislocation Network ◽  
Nickel Base Superalloy ◽  
Dislocation Loops ◽  
Ambient Temperatures

Employing atomistic simulations, we investigated the void collapse mechanisms in single crystal Ni during hydrostatic compression and explored how the atomistic mechanisms of void collapse are influenced by temperature. Our results suggest that the emission and associated mutual interactions of dislocation loops around the void is the primary mechanism of void collapse, irrespective of the temperature. The rate of void collapse is almost insensitive to the temperature, and the process is not thermally activated until a high temperature (∼1200–1500 K) is reached. Our simulations reveal that, at elevated temperatures, dislocation motion is assisted by vacancy diffusion and consequently the void is observed to collapse continuously without showing appreciable strain hardening around it. In contrast, at low and ambient temperatures (1 and 300 K), void collapse is delayed after an initial stage of closure due to significant strain hardening around the void. Furthermore, we observe that the dislocation network produced during void collapse remains the sample even after complete void collapse, as was observed in a recent experiment of nickel-base superalloy after hot isostatic pressing.

Synchrotron 3D μ-Tomography of Porosity during Hot Isostatic Pressing of a Single-Crystal Nickel-Base Superalloy

2021 ◽  
Vol 1016 ◽  
pp. 102-106
Author(s):  
Alexander Epishin ◽  
Bettina Camin ◽  
Lennart Hansen ◽  
Jonas Schmidt
Keyword(s):  
Fatigue Strength ◽  
High Resolution ◽  
Single Crystal ◽  
Hot Isostatic Pressing ◽  
European Synchrotron Radiation Facility ◽  
Nickel Base Superalloy ◽  
Isostatic Pressing ◽  
Long Time ◽  
Nickel Base ◽  
Base Superalloy

The evolution of microporosity in single-crystal nickel-base superalloy CMSX-4 during hot isostatic pressing has been investigated by high resolution tomography at the European Synchrotron Radiation Facility in Grenoble. The kinetic dependencies of microporosity annihilation in the superalloy in initially as-cast and homogenized conditions were obtained. It was shown that smaller homogenization pores of about 5-10 μm in size are rapidly annihilate during hot isostatic pressing, while annihilation of larger solidification pores of size up to a few hundred micrometer takes a long time. After commercial hot isostatic pressing at 1288 °C, 103 MPa, 4 h only rare pores smaller than 20 μm remain, which are not critical for fatigue strength.

Pore annihilation in a single-crystal nickel-base superalloy during hot isostatic pressing: Experiment and modelling

2013 ◽  
Vol 586 ◽  
pp. 342-349 ◽  
Author(s):  
Alexander Epishin ◽  
Bernard Fedelich ◽  
Thomas Link ◽  
Titus Feldmann ◽  
Igor L. Svetlov
Keyword(s):  
Single Crystal ◽  
Hot Isostatic Pressing ◽  
Nickel Base Superalloy ◽  
Isostatic Pressing ◽  
Nickel Base ◽  
Base Superalloy

Mechanical Properties and Dislocation Structure of Single Crystal Cdte Deformed in Compression at 300°C

1976 ◽  
Vol 34 ◽  
pp. 592-593
Author(s):  
Ernest L. Hall ◽  
J. B. Vander Sande
Keyword(s):  
Mechanical Properties ◽  
Single Crystal ◽  
Dislocation Structure ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Strain Curve ◽  
Optical Devices ◽  
Semiconductor Compound ◽  
Wide Range ◽  
Sample Orientation

The present paper describes research on the mechanical properties and related dislocation structure of CdTe, a II-VI semiconductor compound with a wide range of uses in electrical and optical devices. At room temperature CdTe exhibits little plasticity and at the same time relatively low strength and hardness. The mechanical behavior of CdTe was examined at elevated temperatures with the goal of understanding plastic flow in this material and eventually improving the room temperature properties. Several samples of single crystal CdTe of identical size and crystallographic orientation were deformed in compression at 300°C to various levels of total strain. A resolved shear stress vs. compressive glide strain curve (Figure la) was derived from the results of the tests and the knowledge of the sample orientation.

The threshold energy for atom displacement in fcc metals

1990 ◽  
Vol 48 (4) ◽  
pp. 530-531
Author(s):  
Wilfried Sigle ◽  
Matthias Hohenstein ◽  
Alfred Seeger
Keyword(s):  
Growth Rate ◽  
Elevated Temperatures ◽  
Threshold Energy ◽  
Dislocation Loops ◽  
Absolute Minimum ◽  
Voltage Electron ◽  
Atom Displacement ◽  
Electron Microscopes ◽  
Fcc Metal

Prolonged electron irradiation of metals at elevated temperatures usually leads to the formation of large interstitial-type dislocation loops. The growth rate of the loops is proportional to the total cross-section for atom displacement,which is implicitly connected with the threshold energy for atom displacement, Ed . Thus, by measuring the growth rate as a function of the electron energy and the orientation of the specimen with respect to the electron beam, the anisotropy of Ed can be determined rather precisely. We have performed such experiments in situ in high-voltage electron microscopes on Ag and Au at 473K as a function of the orientation and on Au as a function of temperature at several fixed orientations.Whereas in Ag minima of Ed are found close to <100>,<110>, and <210> (13-18eV), (Fig.1) atom displacement in Au requires least energy along <100>(15-19eV) (Fig.2). Au is thus the first fcc metal in which the absolute minimum of the threshold energy has been established not to lie in or close to the <110> direction.

scholarly journals Heteroleptic [Cu(P^P)(N^N)][PF6] Complexes: Effects of Isomer Switching from 2,2′-biquinoline to 1,1′-biisoquinoline

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 185
Author(s):  
Nina Arnosti ◽  
Marco Meyer ◽  
Alessandro Prescimone ◽  
Edwin C. Constable ◽  
Catherine E. Housecroft
Keyword(s):  
Crystal Structure ◽  
Single Crystal ◽  
Nmr Spectra ◽  
Phenyl Ether ◽  
Quantum Yields ◽  
Dynamic Processes ◽  
Electrochemical Behaviors ◽  
Ambient Temperatures ◽  
Π Stacking

The preparation and characterization of [Cu(POP)(biq)][PF6] and [Cu(xantphos)(biq)][PF6] are reported (biq = 1,1′-biisoquinoline, POP = bis(2-(diphenylphosphanyl)phenyl)ether, and xantphos = (9,9-dimethyl-9H-xanthene-4,5-diyl)bis(diphenylphosphane). The single crystal structure of [Cu(POP)(biq)][PF6] 0.5Et2O was determined and compared to that in three salts of [Cu(POP)(bq)]+ in which bq = 2,2′-biquinoline. The P–C–P angle is 114.456(19)o in [Cu(POP)(biq)]+ compared to a range of 118.29(3)–119.60(3)o [Cu(POP)(bq)]+. There is a change from an intra-POP PPh2-phenyl/(C6H4)2O-arene π-stacking in [Cu(POP)(biq)]+ to a π-stacking contact between the POP and bq ligands in [Cu(POP)(bq)]+. In solution and at ambient temperatures, the [Cu(POP)(biq)][PF6]+ and [Cu(xantphos)(biq)]+ cations undergo several concurrent dynamic processes, as evidenced in their multinuclear NMR spectra. The photophysical and electrochemical behaviors of the heteroleptic copper (I) complexes were investigated, and the effects of changing from bq to biq are described. Short Cu···O distances within the [Cu(POP)(biq)]+ and [Cu(xantphos)(biq)]+ cations may contribute to their very low photoluminescent quantum yields.

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