scholarly journals Thermal Transport and Thermoelectric Effect in Composites of Alumina and Graphene-Augmented Alumina Nanofibers

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2242
Author(s):  
Ali Saffar Shamshirgar ◽  
Manuel Belmonte ◽  
Girish C. Tewari ◽  
Rocío E. Rojas Hernández ◽  
Jani Seitsonen ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Figure Of Merit ◽  
Filler Content ◽  
Alumina Ceramics ◽  
Thermoelectric Figure ◽  
Seebeck Coefficients ◽  
Alumina Nanofibers ◽  
Plasma Sintering ◽  
Carbon Structures ◽  
Spark Plasma

The remarkable tunability of 2D carbon structures combined with their non-toxicity renders them interesting candidates for thermoelectric applications. Despite some limitations related to their high thermal conductivity and low Seebeck coefficients, several other unique properties of the graphene-like structures could out-weight these weaknesses in some applications. In this study, hybrid structures of alumina ceramics and graphene encapsulated alumina nanofibers are processed by spark plasma sintering to exploit advantages of thermoelectric properties of graphene and high stiffness of alumina. The paper focuses on thermal and electronic transport properties of the systems with varying content of nanofillers (1–25 wt.%) and demonstrates an increase of the Seebeck coefficient and a reduction of the thermal conductivity with an increase in filler content. As a result, the highest thermoelectric figure of merit is achieved in a sample with 25 wt.% of the fillers corresponding to ~3 wt.% of graphene content. The graphene encapsulated nanofibrous fillers, thus, show promising potential for thermoelectric material designs by tuning their properties via carrier density modification and Fermi engineering through doping.

Synthesis and Thermoelectric Properties of WO3/Cu2SnSe3 Composites

2018 ◽  
Vol 913 ◽  
pp. 811-817 ◽  
Author(s):  
Di Wu ◽  
Ji Ai Ning ◽  
De Gang Zhao ◽  
Xue Zhen Wang ◽  
Na Liu
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Grain Boundary ◽  
Figure Of Merit ◽  
Milling Process ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma

In this study, nanometer WO3 powder was uniformly dispersed into the Cu2SnSe3 powder by ball milling process, and the WO3/Cu2SnSe3 thermoelectric composite was prepared by spark plasma sintering (SPS). The results showed that the nano-WO3 particles were mainly distributed in the grain boundary of Cu2SnSe3 matrix, and the grain growth of Cu2SnSe3 was inhibited. The addition of nano-WO3 could enhance the electrical conductivity of Cu2SnSe3, and while the Seebeck coefficient increased slightly for the 0.4% WO3/Cu2SnSe3 composite. The thermal conductivity was not decreased until the content of WO3 exceeded 1.6%. The highest thermoelectric figure of merit ZT of 0.177 was achieved at 700 K for 0.4% WO3/Cu2SnSe3 composite. The enhancement of ZT value of WO3/Cu2SnSe3 thermoelectric material was mainly attributed to the improvement of the electrical properties.

scholarly journals Is LiI a Potential Dopant Candidate to Enhance the Thermoelectric Performance in Sb-Free GeTe Systems? A Prelusive Study

Energies ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 643 ◽  
Author(s):  
Bhuvanesh Srinivasan ◽  
David Berthebaud ◽  
Takao Mori
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Power Factor ◽  
Figure Of Merit ◽  
Lattice Thermal Conductivity ◽  
Short Communication ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Spark Plasma

As a workable substitute for toxic PbTe-based thermoelectrics, GeTe-based materials are emanating as reliable alternatives. To assess the suitability of LiI as a dopant in thermoelectric GeTe, a prelusive study of thermoelectric properties of GeTe1−xLiIx (x = 0–0.02) alloys processed by Spark Plasma Sintering (SPS) are presented in this short communication. A maximum thermoelectric figure of merit, zT ~ 1.2, was attained at 773 K for 2 mol% LiI-doped GeTe composition, thanks to the combined benefits of a noted reduction in the thermal conductivity and a marginally improved power factor. The scattering of heat carrying phonons due to the presumable formation of Li-induced “pseudo-vacancies” and nano-precipitates contributed to the conspicuous suppression of lattice thermal conductivity, and consequently boosted the zT of the Sb-free (GeTe)0.98(LiI)0.02 sample when compared to that of pristine GeTe and Sb-rich (GeTe)x(LiSbTe2)2 compounds that were reported earlier.

scholarly journals Thermoelectric Transport Properties of n-Type Sb-doped (Hf,Zr,Ti)NiSn Half-Heusler Alloys Prepared by Temperature-Regulated Melt Spinning and Spark Plasma Sintering

2020 ◽  
Vol 10 (14) ◽  
pp. 4963 ◽  
Author(s):  
Ki Wook Bae ◽  
Jeong Yun Hwang ◽  
Sang-il Kim ◽  
Hyung Mo Jeong ◽  
Sunuk Kim ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Spark Plasma Sintering ◽  
Figure Of Merit ◽  
Melt Spinning ◽  
Lattice Thermal Conductivity ◽  
Heusler Alloys ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Thermoelectric Transport Properties ◽  
Spark Plasma

Herein we report a significantly reduced lattice thermal conductivity of Sb-doped Hf0.35Zr0.35Ti0.3NiSn half-Heusler alloys with sub-micron grains (grain size of ~300 nm). Polycrystalline bulks of Hf0.35Zr0.35Ti0.3NiSn1−xSbx (x = 0.01, 0.02, 0.03) with a complete single half-Heusler phase are prepared using temperature-regulated melt spinning and subsequent spark plasma sintering without a long annealing process. In these submicron-grained bulks, a very low lattice thermal conductivity value of ~2.4 W m−1 K−1 is obtained at 300 K due to the intensified phonon scatterings by highly dense grain boundaries and point-defects (Zr and Ti substituted at Hf-sites). A maximum thermoelectric figure of merit, zT, of 0.5 at 800 K is obtained in Hf0.35Zr0.35Ti0.3NiSn0.99Sb0.01.

High Temperature Thermoelectric Properties of AgPb18+xSbTe20

2007 ◽  
Vol 336-338 ◽  
pp. 857-859
Author(s):  
Wen Bing Zhang ◽  
Li Dong Chen ◽  
Xiao Ya Li
Keyword(s):  
Crystal Structure ◽  
Figure Of Merit ◽  
Lead Telluride ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Pure Lead ◽  
Melting Method ◽  
Temperature Range ◽  
Plasma Sintering ◽  
Spark Plasma

Polycrystalline AgPb18+xSbTe20 compounds with different Pb contents (x=1-4) were prepared by melting method and spark plasma sintering techniques. The crystal structure and chemical composition were determined by XRD and EPMA. The thermal conductivity, electrical conductivity and Seebeck coefficient were measured in the temperature range of 300-800K. The dimensionless thermoelectric figure of merit (ZT) of AgPb18+xSbTe20 (x=1-4) increases in the whole temperature range of 300-750K which is different to the pure lead telluride compound. The maximum ZT value reaches 1.03 at 800K.

Enhanced Thermoelectric Properties of Mg2Si0.3Sn0.7 Compounds by Bi Doping

2014 ◽  
Vol 616 ◽  
pp. 174-177
Author(s):  
Mei Jun Yang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Doping Concentration ◽  
Single Phase ◽  
Doping Content ◽  
Maximum Value ◽  
Plasma Sintering ◽  
Bi Doping ◽  
Spark Plasma

The single phase of Bi-doped Mg2Si0.3Sn0.7compounds have been successfully fabricated by solid state reaction and spark plasma sintering (SPS). The effect of Bi doping concentration on the thermoelectric properties of Mg2Si0.3Sn0.7is investigated. The doping of Bi atom results in the increase of carrier concentrations and ensures the increase of electrical conductivity. Although the thermal conductivity and Seebeck coefficient shows a slight increase, the figure of merit of Mg2Si0.3Sn0.7compounds still increases with the increasing contents of Bi-doping. When Bi-doping content is 1.5at%, the Mg2Si0.3Sn0.7compound obtained the maximum value,ZT, is 1.03 at 640 K.

Thermoelectrical properties of α phase and γ phase NaxCo2O4 ceramics prepared by spark plasma sintering method

2013 ◽  
Vol 1490 ◽  
pp. 57-62 ◽  
Author(s):  
Natsuko Mikami ◽  
Keishi Nishio ◽  
Koya Arai ◽  
Tatsuya Sakamoto ◽  
Masahiro Minowa ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Spark Plasma Sintering ◽  
Figure Of Merit ◽  
Dimensionless Figure Of Merit ◽  
Α Phase ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Sintering Method ◽  
Acid Compound

ABSTRACTThe thermoelectrical properties of α and γ phases of NaxCo2O4 having different amounts of Na were evaluated. The γ NaxCo2O4 samples were synthesized by thermal decomposition in a metal-citric acid compound, and the α NaxCo2O4 samples were synthesized by self-flux processing. Dense bulk ceramics were fabricated using spark plasma sintering (SPS), and the sintered samples were of high density and highly oriented. The thermoelectrical properties showed that γ NaxCo2O4 had higher electrical conductivity and lower thermal conductivity compared with α NaxCo2O4 and that α NaxCo2O4 had a larger Seebeck coefficient. These results show that γ NaxCo2O4 has a larger power factor and dimensionless figure of merit, ZT, than α NaxCo2O4.

Effect of Oxygen Content on Thermoelectric Properties of Sintered Bi-Te Based Compounds

2004 ◽  
Vol 449-452 ◽  
pp. 905-908 ◽  
Author(s):  
Dong Choul Cho ◽  
Cheol Ho Lim ◽  
D.M. Lee ◽  
Seung Y. Shin ◽  
Chung Hyo Lee
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Oxygen Content ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Air Atmosphere ◽  
Plasma Sintering ◽  
Spark Plasma ◽  
Effect Of Oxygen

The n-type thermoelectric materials of Bi2Te2.7Se0.3 doped with SbI3 were prepared by spark plasma sintering technique. The powders were ball-milled in an argon and air atmosphere. Then, powders were reduced in H2 atmosphere. Effects of oxygen content on the thermoelectric properties of Bi2Te2.7Se0.3 compounds have been investigated. Seebeck coefficient, electrical resistivity and thermal conductivity of the sintered compound were measured at room temperature. It was found that the effect of atmosphere during the powder production was remarkable and thermoelectric properties of sintered compound were remarkably improved by H2 reduction of starting powder. The obtained maximum figure of merit was 2.4 x 10-3/K.

scholarly journals Nanostructured SiGe:Sb solid solutions with improved thermoelectric figure of merit

2020 ◽  
Author(s):  
Mikhail Vladimirovich Dorokhin ◽  
Polina Borisovna Demina ◽  
Irina Viktorovna Erofeeva ◽  
Yuri Mikhailovich Kuznetsov ◽  
Anton Vladimirovich Zdoroveyshchev ◽  
...  
Keyword(s):  
Solid State ◽  
Figure Of Merit ◽  
Heating Temperature ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Solid State Sintering ◽  
Maximum Heating Temperature ◽  
Spark Plasma ◽  
Maximum Heating

Abstract Thermoelectric Si 0,65 Ge 0,35 Sb δ materials have been fabricated by spark plasma sintering of Ge-Si-Sb powder mixture. The electronic properties of Si 0,65 Ge 0,35 Sb δ were found to be dependent on the uniformity of mixing of the components, which in turn is determined by the maximum heating temperature during solid-state sintering. Provided the concentration of donor Sb impurity is optimized the thermoelectric figure of merit for the investigated structures can be as high as 0.628 at the temperature of 490 °С, the latter value is comparable with world-known analogues obtained for Si 1- x Ge x P δ .

scholarly journals Development of Spark Plasma Syntering (SPS) technology for preparation of nanocrystalline p-type thermoelctrics based on (BiSb)2Te3

2020 ◽  
Vol 21 (4) ◽  
pp. 628-634
Author(s):  
O. Kostyuk ◽  
B. Dzundza ◽  
M. Maksymuk ◽  
V. Bublik ◽  
L. Chernyak ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Antimony Telluride ◽  
Bismuth Antimony Telluride ◽  
Thermoelectric Figure ◽  
Temperature Range ◽  
Plasma Sintering ◽  
Different Temperatures ◽  
Spark Plasma ◽  
P Type

Bismuth antimony telluride is the most commonly used commercial thermoelectric material for power generation and refrigeration over the temperature range of 200–400 K. Improving the performance of these materials is a complected balance of optimizing thermoelectric properties. Decreasing the grain size of Bi0.5Sb1.5Te3 significantly reduces the thermal conductivity due to the scattering phonons on the grain boundaries. In this work, it is shown the advances of spark plasma sintering (SPS) for the preparation of nanocrystalline p-type thermoelectrics based on Bi0.5Sb1.5Te3 at different temperatures (240, 350, 400oC). The complex study of structural and thermoelectric properties of Bi0.5Sb1.5Te3 were presented. The high dimensionless thermoelectric figure of merit ZT ~ 1 or some more over 300–400 K temperature range for nanocrystalline p-type Bi0.5Sb1.5Te3 was obtained.

scholarly journals Легирование термоэлектрических материалов на основе твeрдых растворов SiGe в процессе их синтеза методом электроимпульсного плазменного спекания

2019 ◽  
Vol 53 (9) ◽  
pp. 1182
Author(s):  
М.В. Дорохин ◽  
П.Б. Демина ◽  
И.В. Ерофеева ◽  
А.В. Здоровейщев ◽  
Ю.М. Кузнецов ◽  
...  
Keyword(s):  
Solid Solution ◽  
Seebeck Coefficient ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Sintering Process ◽  
Thermoelectric Figure ◽  
Plasma Sintering ◽  
Sb Doping ◽  
Spark Plasma ◽  
Large Clusters

AbstractThe results of investigation of thermoelectric materials fabricated by spark plasma sintering and based on Si_1 –_ x Ge_ x solid solutions doped with Sb to a concentration of 0–5 at % are presented. It was found that, at Sb concentration below 1 at %, efficient doping of the solid solution was carried out during the sintering process, which allowed us to form a thermoelectric material with a relatively high thermoelectric figure of merit. An increase in the concentration of antimony in the range of 1–5 at % led to a change in the mechanism of doping, which resulted in an increase in the resistance of materials and the segregation of Sb into large clusters. For such materials, a significant decrease in the Seebeck coefficient and thermoelectric figure of merit was noted. The highest obtained thermoelectric figure of merit (ZT) with Sb doping was 0.32 at 350°C, which is comparable with known analogues for the Ge_ x Si_1 –_ x solid solution.

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