scholarly journals Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

Materials ◽  
2020 ◽  
Vol 13 (23) ◽  
pp. 5567
Author(s):  
Guiliang Liu ◽  
Yipeng Li ◽  
Zongbei He ◽  
Yang Chen ◽  
Shuo Cong ◽  
...  
Keyword(s):  
Elastic Modulus ◽  
High Temperature ◽  
Depth Range ◽  
High Temperature Annealing ◽  
Columnar Crystal ◽  
Helium Bubbles ◽  
Pressure Water ◽  
Nanoindentation Hardness ◽  
Sic Coatings ◽  
Region Line

The microstructure and nanoindentation hardness of unirradiated, irradiated, annealed and corroded SiC coatings were characterized. Irradiation of 400 keV C+ and 200 keV He+ with approximately 10 dpa did not cause obvious amorphous transformation to nanocrystal SiC coatings and induced helium bubbles with 2–3 nm dimension distributed uniformly in the SiC matrix. High temperature annealing resulted in the transformation of SiC nanocrystals into columnar crystals in the irradiated region. Line-shaped bubble bands formed at the columnar crystal boundaries and their stacking fault planes and made the formation of microcracks of hundreds of nanometers in length. Meanwhile, some isolated helium bubbles distributed in SiC grains still maintained a size of 2–3 nm, despite annealing at 1200 °C for 5 h. The SiC coating showed excellent corrosion resistance under high-temperature, high-pressure water. The weight of the sample decreased with the increase of corrosion time. The nanoindentation hardness and the elastic modulus increased significantly with C+ and He+ irradiation, while their values decreased with high-temperature annealing. An increase in the annealing temperature led to an increased reduction in the values. Corrosion caused the decrease of nanoindentation hardness and the elastic modulus in the whole test depth range, whether the samples were irradiated or unirradiated.

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

FERROPERM

Alloy Digest ◽  
1993 ◽  
Vol 42 (4) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Physical Properties ◽  
Saturation Magnetization ◽  
Pure Iron ◽  
Magnetic Alloy ◽  
High Saturation Magnetization ◽  
High Temperature Annealing ◽  
Soft Magnetic ◽  
Soft Magnetic Alloy

Abstract Ferroperm is a soft magnetic alloy that contains 1% aluminum. This addition of aluminum combined with high-temperature annealing increases permeability and reduces coercivity without decreasing the high-saturation magnetization of pure iron. This datasheet provides information on composition, physical properties, elasticity, and tensile properties as well as fracture toughness. It also includes information on forming. Filing Code: FE-99. Producer or source: NKK Corporation.

Preparation of silicon-based nanowires through high-temperature annealing

2018 ◽  
Vol 42 (1) ◽  
pp. 149-158
Author(s):  
SHUANG XI ◽  
SHUANGSHUANG ZUO ◽  
YING LIU ◽  
YINLONG ZHU ◽  
YUTU YANG ◽  
...  
Keyword(s):  
High Temperature ◽  
High Temperature Annealing ◽  
Silicon Based

scholarly journals High Crystallinity and Highly Relaxed Al 0.60 Ga 0.40 N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing

2020 ◽  
Vol 217 (14) ◽  
pp. 1900868 ◽  
Author(s):  
Shohei Teramura ◽  
Yuta Kawase ◽  
Yusuke Sakuragi ◽  
Sho Iwayama ◽  
Motoaki Iwaya ◽  
...  
Keyword(s):  
High Temperature ◽  
Growth Mode ◽  
High Temperature Annealing ◽  
High Crystallinity ◽  
Mode Control
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