scholarly journals Structure and Properties of ZnO Coatings Obtained by Atomic Layer Deposition (ALD) Method on a Cr-Ni-Mo Steel Substrate Type

Materials ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 4223
Author(s):  
Marcin Staszuk ◽  
Daniel Pakuła ◽  
Łukasz Reimann ◽  
Mariusz Król ◽  
Marcin Basiaga ◽  
...  
Keyword(s):  
Corrosion Resistance ◽  
Biomedical Applications ◽  
316L Stainless Steel ◽  
Steel Substrate ◽  
Atomic Layer ◽  
Ringer Solution ◽  
Zno Films ◽  
Substrate Type ◽  
Layer Deposition ◽  
Structure Morphology

This paper aimed to investigate the structure and physicochemical and tribological properties of ZnO coatings deposited by ALD on 316L stainless steel for biomedical applications. To obtain ZnO films, diethylzinc (DEZ) and water were used as ALD precursors. Zinc oxide layers were deposited at the same temperature of 200 °C using three types of ALD cycles: 500, 1000 and 1500. The structure and morphology of ZnO coatings were examined using SEM and AFM microscopes. The XRD and GIXRD methods were used for the phase analysis of the obtained coatings. To determine the resistance to pitting corrosion, potentiodynamic investigations and impedance spectroscopy were conducted in a Ringer solution at a temperature of 37 °C. The obtained results showed that the number of ALD cycles had a significant impact on the structure, morphology and corrosion resistance of the ZnO layers. It was found that after increasing the coating thickness of the ZnO on the material, its electrochemical properties determining the corrosion resistance also increased. Moreover, on the basis of the ball-on-plate tribological investigations, we found a significant reduction in the friction coefficient of the samples with the investigated coatings in relation to the noncoated substrates.

scholarly journals Structure and Surface Morphology Effect on the Cytotoxicity of [Al2O3/ZnO]n/316L SS Nanolaminates Growth by Atomic Layer Deposition (ALD)

Crystals ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 620
Author(s):  
D. Osorio ◽  
J. Lopez ◽  
H. Tiznado ◽  
Mario H. Farias ◽  
M. A. Hernandez-Landaverde ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Atomic Layer Deposition ◽  
Biomedical Applications ◽  
316L Stainless Steel ◽  
Electrochemical Impedance ◽  
Steel Substrate ◽  
Chinese Hamster ◽  
Atomic Layer ◽  
X Ray ◽  
Layer Deposition

Recently, different biomedical applications of aluminum oxide (Al2O3) and zinc oxide (ZnO) have been studied, and they have displayed good biocompatible behavior. For this reason, this study explores nanolaminates of [Al2O3/ZnO]n obtained by atomic layer deposition (ALD) on silicon (100) and 316L stainless steel substrates with different bilayer periods: n = 1, 2, 5, and 10. The intention is to correlate the structure, chemical bonds, morphology, and electrochemical properties of ZnO and Al2O3 single layers and [Al2O3/ZnO]n nanolaminates with their cytotoxic and biocompatibility behavior, to establish their viability for biomedical applications in implants based on the 316L SS substrate. These nanolaminates have been characterized by grazing incident X-ray diffraction (XRD), finding diffraction planes for wurtzite type structure from zincite. The chemical bonding and composition for both single layers were identified through X-ray photoelectron spectroscopy (XPS). The morphology and roughness were tested with atomic force microscopy (AFM), which showed a reduction in roughness and grain size with a bilayer period increase. The thickness of the samples was measured with scanning electron microscopy, and the results confirmed the value of ~210 nm for the nanolaminate samples. The electrochemical impedance spectroscopy analysis with Hank’s balanced salt solution (HBSS) evidenced an evolution of [Al2O3/ZnO]n/316L system corrosion resistance of around 95% in relation with the uncoated steel substrate as function of the increase in the bilayers number. To identify the biocompatibility behavior of these nanolaminate systems, the lactate dehydrogenase test was performed with Chinese hamster ovary (CHO) cells for a short system of life cell evaluation. This test shows the cytotoxicity of the multilayer compared to the single layers of Al2O3, ZnO, and 316L stainless steel. The lowest cytotoxicity was found in the single layers of ZnO, which leads to cell proliferation easier than Al2O3, obtaining better adhesion and anchoring to its surface.

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Hydrogen in As‐Grown and Annealed ZnO Films Grown by Atomic Layer Deposition

2020 ◽  
Vol 218 (1) ◽  
pp. 2000318
Author(s):  
Elzbieta Guziewicz ◽  
Wojciech Wozniak ◽  
Sushma Mishra ◽  
Rafal Jakiela ◽  
Marek Guziewicz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition

Improving the photodetection and stability of a visible-light QDs/ZnO phototransistor via an Al2O3 additional layer

2021 ◽  
Author(s):  
Sungho Park ◽  
Byung Jun Kim ◽  
Tae Yeon Kim ◽  
Eui Young Jung ◽  
Kyu-Myung Lee ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Quantum Dot ◽  
Aluminum Oxide ◽  
Thin Layer ◽  
Visible Light ◽  
Atomic Layer ◽  
Zno Films ◽  
Additional Layer ◽  
Layer Deposition

We have developed a visible-light phototransistor with excellent photodetection characteristics and stability via atomic layer deposition (ALD) to add a thin layer of aluminum oxide (Al2O3) to quantum dot (QD)/zinc oxide (ZnO) films.

Low-temperature atomic layer deposition of ZnO films on particles in a fluidized bed reactor

2008 ◽  
Vol 516 (23) ◽  
pp. 8517-8523 ◽  
Author(s):  
David M. King ◽  
Xinhua Liang ◽  
Peng Li ◽  
Alan W. Weimer
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Fluidized Bed ◽  
Atomic Layer ◽  
Fluidized Bed Reactor ◽  
Zno Films ◽  
Layer Deposition

Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

2006 ◽  
Vol 510-511 ◽  
pp. 670-673 ◽  
Author(s):  
Chong Mu Lee ◽  
Yeon Kyu Park ◽  
Anna Park ◽  
Choong Mo Kim
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Xrd Analysis ◽  
Nitrogen Atmosphere ◽  
Zno Thin Films ◽  
Zno Films ◽  
Annealing Atmosphere ◽  
Zno Film ◽  
Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

In situ Al-doped ZnO films by atomic layer deposition with an interrupted flow

2015 ◽  
Vol 165 ◽  
pp. 245-252 ◽  
Author(s):  
Jheng-Ming Huang ◽  
Ching-Shun Ku ◽  
Chih-Ming Lin ◽  
San-Yuan Chen ◽  
Hsin-Yi Lee
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Films ◽  
Layer Deposition ◽  
Doped Zno ◽  
Interrupted Flow

scholarly journals Air Annealing Effect on Oxygen Vacancy Defects in Al-doped ZnO Films Grown by High-Speed Atmospheric Atomic Layer Deposition

Molecules ◽  
2020 ◽  
Vol 25 (21) ◽  
pp. 5043
Author(s):  
Chia-Hsun Hsu ◽  
Xin-Peng Geng ◽  
Wan-Yu Wu ◽  
Ming-Jie Zhao ◽  
Xiao-Ying Zhang ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Band Gap ◽  
Photoelectron Spectroscopy ◽  
High Speed ◽  
Oxygen Vacancies ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Zno Films ◽  
X Ray ◽  
Layer Deposition

In this study, aluminum-doped zinc oxide (Al:ZnO) thin films were grown by high-speed atmospheric atomic layer deposition (AALD), and the effects of air annealing on film properties are investigated. The experimental results show that the thermal annealing can significantly reduce the amount of oxygen vacancies defects as evidenced by X-ray photoelectron spectroscopy spectra due to the in-diffusion of oxygen from air to the films. As shown by X-ray diffraction, the annealing repairs the crystalline structure and releases the stress. The absorption coefficient of the films increases with the annealing temperature due to the increased density. The annealing temperature reaching 600 °C leads to relatively significant changes in grain size and band gap. From the results of band gap and Hall-effect measurements, the annealing temperature lower than 600 °C reduces the oxygen vacancies defects acting as shallow donors, while it is suspected that the annealing temperature higher than 600 °C can further remove the oxygen defects introduced mid-gap states.

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