scholarly journals Influence of Temperature Reaction for the CdSe–TiO2 Nanotube Thin Film Formation via Chemical Bath Deposition in Improving the Photoelectrochemical Activity

Materials ◽  
2020 ◽  
Vol 13 (11) ◽  
pp. 2533
Author(s):  
Chin Wei Lai ◽  
Nurul Asma Samsudin ◽  
Foo Wah Low ◽  
Nur Azimah Abd Samad ◽  
Kung Shiuh Lau ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Bath Deposition ◽  
Deposition Temperature ◽  
Film Formation ◽  
Photocurrent Density ◽  
Tio2 Nanotube ◽  
Cubic Phase ◽  
Photoelectrochemical Performance ◽  
Photoelectrochemical Activity

In this present work, we report the deposition of cadmium selenide (CdSe) particles on titanium dioxide (TiO2) nanotube thin films, using the chemical bath deposition (CBD) method at low deposition temperatures ranging from 20 to 60 °C. The deposition temperature had an influence on the overall CdSe–TiO2 nanotube thin film morphologies, chemical composition, phase transition, and optical properties, which, in turn, influenced the photoelectrochemical performance of the samples that were investigated. All samples showed the presence of CdSe particles in the TiO2 nanotube thin film lattice structures with the cubic phase CdSe compound. The amount of CdSe loading on the TiO2 nanotube thin films were increased and tended to form agglomerates as a function of deposition temperature. Interestingly, a significant enhancement in photocurrent density was observed for the CdSe–TiO2 nanotube thin films deposited at 20 °C with a photocurrent density of 1.70 mA cm−2, which was 17% higher than the bare TiO2 nanotube thin films. This sample showed a clear surface morphology without any clogged nanotubes, leading to better ion diffusion, and, thus, an enhanced photocurrent density. Despite having the least CdSe loading on the TiO2 nanotube thin films, the CdSe–TiO2 nanotube thin films deposited at 20 °C showed the highest photocurrent density, which confirmed that a small amount of CdSe is enough to enhance the photoelectrochemical performance of the sample.

scholarly journals High-Throughput Characterization of Structural and Photoelectrochemical Properties of a Bi–Mo–W–O Thin-Film Materials Library

2020 ◽  
Vol 234 (5) ◽  
pp. 835-845 ◽  
Author(s):  
Mona Nowak ◽  
Ramona Gutkowski ◽  
Joao Junqueira ◽  
Wolfgang Schuhmann ◽  
Alfred Ludwig
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Lattice Distortion ◽  
Photocurrent Density ◽  
Diffraction Peak ◽  
Photoelectrochemical Properties ◽  
Aurivillius Phase ◽  
Photoelectrochemical Performance ◽  
Photoelectrochemical Activity

AbstractA Bi–W–Mo–O thin-film materials library was fabricated by combinatorial reactive magnetron sputtering. The composition spread was investigated using high-throughput methods to determine crystalline phases, composition, morphology, optical properties, and photoelectrochemical performance. The aurivillius phase (Bi2O2)2+ (BiM(W1−NMoN)M−1O3M+1)2− is the predominantly observed crystal structure, indicating that the thin films in the library are solid solutions. With increasing amounts of Mo ≙ 7–22% the diffraction peak at 2θ = 28° ≙ [131] shifts due to lattice distortion, the photoelectrochemical activity is increasing up to a wavelength of 460 nm with an incident photon to current efficiency (IPCE) of 4.5%, and the bandgap decreases. A maximum photocurrent density of 31 μA/cm2 was measured for Bi31W62Mo7Oz at a bias potential of 1.23 V vs. RHE (0.1 M Na2SO4).

A facile room temperature chemical transformation approach for binder-free thin film formation of Ag2Te and lithiation/delithiation chemistry of the film

2016 ◽  
Vol 45 (43) ◽  
pp. 17312-17318 ◽  
Author(s):  
Eun-Kyung Kim ◽  
Dasom Park ◽  
Nabeen K. Shrestha ◽  
Jinho Chang ◽  
Cheol-Woo Yi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Aqueous Solution ◽  
Ion Exchange ◽  
Chemical Transformation ◽  
Room Temperature ◽  
Film Formation ◽  
Synthetic Method ◽  
Binder Free ◽  
Thin Film Formation

An aqueous solution based synthetic method for binder-free Ag2Te thin films using ion exchange induced chemical transformation of Ag/AgxO thin films.

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

scholarly journals Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

2021 ◽  
Author(s):  
Yuming Xue ◽  
Xinyu Wang ◽  
Liming Zhang ◽  
Shipeng Zhang ◽  
Lang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Deposition Rate ◽  
Lattice Mismatch ◽  
Solution Concentration ◽  
State Density ◽  
Cubic Phase ◽  
Cigs Solar Cell

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

Chemical, structural and photovoltaic properties of graded CdSxSe1−x thin films grown by chemical bath deposition on GaAs(100)

CrystEngComm ◽  
2018 ◽  
Vol 20 (38) ◽  
pp. 5735-5743 ◽  
Author(s):  
Ofir Friedman ◽  
Omri Moschovitz ◽  
Yuval Golan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Chemical Bath Deposition ◽  
Photovoltaic Cell ◽  
Photovoltaic Properties

Chemically graded Cd(S,Se) thin film and photovoltaic cell illustration.

Absorber Films of Ag2S and AgBiS2 prepared by Chemical Bath Deposition

2002 ◽  
Vol 730 ◽  
Author(s):  
A. Nuñez Rodriguez ◽  
M.T.S. Nair ◽  
P.K. Nair
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Silver Nitrate ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Optical Band Gap ◽  
Sodium Thiosulfate ◽  
Xrd Pattern ◽  
Glass Substrates

AbstractAg2S thin films of 90 nm to 300 nm in thickness were deposited at 70°C on glass substrates immersed in a bath mixture containing silver nitrate, sodium thiosulfate and dimethylthiourea. When the films are heated in nitrogen at temperatures 200°C to 400°C, crystallinity is improved and XRD pattern similar to that of acanthite is observed. These films possess electrical conductivity of 10-3 (ohm cm)-1, are photoconductive and exhibit an optical band gap of 1.36 eV. When Ag2S thin film is deposited over a thin film of Bi2S3, also obtained by chemical bath deposition from bismuth nitrate, triethanolamine and thioacetamide, and heated at 300°C to 400°C in nitrogen, a ternary compound, AgBiS2 is formed. This material has an electrical conductivity of 5x10-5 (ohm cm)-1, is photoconductive and possesses optical band gap 0.95 eV.

scholarly journals Ceramic Oxide Thin Film Formation Utilizing Biological Processes

1989 ◽  
Vol 174 ◽  
Author(s):  
B. J. Tarasevich ◽  
P. C. Rieke
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Formation ◽  
Nucleation And Growth ◽  
Oxide Thin Film ◽  
Biological Processes ◽  
Oxide Materials ◽  
Ceramic Oxide ◽  
Mineralization Processes ◽  
Properties Of Materials

AbstracMineralization processes used by bioorganisms have been adapted for the nucleation and growth of ceramic oxide thin films onto surfaces from aqueous solutions. These strategies include the use of surfaces derivatized with specific functional groups that control the nucleation and growth and properties of materials deposited. Iron oxide materials were deposited onto functionalized polystyrene surfaces, resulting in the formation of thin films composed of densely packed, nanometer-sized crystallites. Evidence for the formation of oriented crystallites was found. This process may have advantages over conventional thin film processing methods due to the ability to systematically control properties of materials deposited.

Zinc Sulfide Nanoscaled Buffer Layers for Cu(In,Ga)Se2 Thin Film Solar Cells by Chemical Bath Deposition

2008 ◽  
Vol 51 ◽  
pp. 125-130 ◽  
Author(s):  
Rong Fuh Louh ◽  
Warren Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Zinc Sulfide ◽  
Chemical Bath Deposition ◽  
Energy Gap ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Complexing Agents ◽  
Study Results

Chemical bath deposition (CBD) is a fairly simple synthetic route to prepare II-VI semicondutive zinc sulfide thin films, which can be prepared on the flat surface of glass or silicon wafer substrates in the solution containing the precursors of zinc and sulfur ions in terms of ambient conditions of varying acidity. This study particularly aims at the growth dependence and optical property of ZnS thin films in the CBD process by different experiment parameters, whereas we intend to choose suitable types of zinc ionic precursors to be coupled with various CBD parameters such as reaction temperature and time, precursor concentration, types and complexing agents as well as post-deposition heat treatment conditions. Addition of different concentration of ethylenediamine, ammonium sulfate, sodium citrate and hydrazine in the CBD reaction process was used to control the adequate growth rate of ZnS thin films. As a consequence, the rapid thermal annealing was employed to enhance the film uniformity and thickness evenness, transmittance and the energy gap of ZnS samples. The results would lead to a potential application of buffer layer for the Cu (In,Ga)Se2 based thin film solar cells. The analytic instrument including SEM, AFM, UV-VIS were used to examine the CBD-derived nanosized ZnS buffer layers for the thin film solar cells. The ZnS thin films prepared by the chemical bath deposition in this study results in film thickness of 80 ~ 100 nm, high transmittance of 80~85% and the energy gap of 3.89 ~ 3.98 eV.

scholarly journals Metal phthalocyanines: thin-film formation, microstructure, and physical properties

RSC Advances ◽  
2021 ◽  
Vol 11 (35) ◽  
pp. 21716-21737
Author(s):  
Rosemary R. Cranston ◽  
Benoît H. Lessard
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Physical Properties ◽  
Small Molecules ◽  
Film Formation ◽  
Proper Function ◽  
Next Generation ◽  
Metal Phthalocyanines ◽  
Thin Film Formation

Metal phthalocyanines (MPcs) are an abundant class of conjugated small molecules comprising and their integration into thin films is critial for the proper function of next generation applications.

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