scholarly journals Gradient-Modified HfC-SiC Mixed Bi-Interlayers Synthesized under Different TMS Flow Rate Increment for Depositing Diamond Coating onto WC-Co Substrate

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1558
Author(s):  
Ke Zheng ◽  
Jie Gao ◽  
Shengwang Yu ◽  
Yongsheng Wang ◽  
Hongjun Hei ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Flow Rate ◽  
Cemented Carbides ◽  
Mechanical Interlocking ◽  
Diamond Coating ◽  
Hafnium Carbide ◽  
Composition Distribution ◽  
Plasma Surface ◽  
Gradient Composition ◽  
Excellent Adhesion

To deposit well-adhered diamond coating, gradient-modified hafnium carbide-silicon carbide (HfC-SiC) mixed bi-interlayers were prepared on cemented carbides (WC-Co) by plasma surface metallurgy technique under the different tetramethylsiline (TMS) flow rate increment. The effects of the TMS flow rate increment on the composition, microstructure, adhesion, and hardness of the bi-interlayers were investigated. Then, the well-adhered bi-interlayer was chosen for the deposition of the diamond coating. It was found that the HfC-SiC mixed bi-interlayers consisted of a diffusion-modified HfC-riched inner layer and a SiC-riched outer layer. The TMS flow rate increment played a key role in tailoring the surface morphology, thickness, and interface character of the bi-interlayer. The dense nanocrystalline diamond coating was formed on the optimized bi-interlayer at the increment of 0.20 sccm/2 min. The diamond coating showed excellent adhesion, which was benefited from the cobalt (Co) diffusion inhibition, gradient composition distribution, and mechanical interlocking.

Thermal residual stress analysis of diamond coating on graded cemented carbides

2008 ◽  
Vol 15 (2) ◽  
pp. 165-169 ◽  
Author(s):  
Zi-qian Huang ◽  
Yue-hui He ◽  
Hai-tao Cai ◽  
Cong-hai Wu ◽  
Yi-feng Xiao ◽  
...  
Keyword(s):  
Residual Stress ◽  
Stress Analysis ◽  
Thermal Residual Stress ◽  
Cemented Carbides ◽  
Diamond Coating ◽  
Residual Stress Analysis

Polystyrene-based blend nanorods with gradient composition distribution

2012 ◽  
Vol 55 (5) ◽  
pp. 726-734 ◽  
Author(s):  
Hui Wu ◽  
ZhaoHui Su ◽  
Yuki Terayama ◽  
Atsushi Takahara
Keyword(s):  
Composition Distribution ◽  
Gradient Composition

Mechanical Properties of Diamond Fibres

1995 ◽  
Vol 383 ◽  
Author(s):  
N. M. Everitt ◽  
R. A. Shatwell ◽  
E. Kalaugher ◽  
E. Nicholson
Keyword(s):  
Mechanical Properties ◽  
Silicon Carbide ◽  
Grain Size ◽  
Fracture Strength ◽  
Coating Thickness ◽  
Tensile Testing ◽  
Volume Fraction ◽  
Thick Films ◽  
Diamond Coating ◽  
Bending Tests

ABSTRACTTungsten and silicon carbide fibres have been coated with diamond using the HFCVD technique. The diamond volume fraction varied between 26% and 73%. Resonance in bending tests gave a Young's modulus of 880 GPa for the diamond coating. Tensile testing indicated that the diamond fracture strength was between 600 MPa and 2000 MPa, depending on the coating thickness, and thus the grain size, of the diamond. The strain to failure of the diamond coating in bending was approximately 0.15% for 25 μm thick films.

Highly adherent diamond coatings deposited onto WC-Co cemented carbides via barrier interlayers

1998 ◽  
Vol 13 (10) ◽  
pp. 2841-2846 ◽  
Author(s):  
J. M. Lopez ◽  
V. G. Babaev ◽  
V. V. Khvostov ◽  
J. M. Albella
Keyword(s):  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cemented Carbides ◽  
Bonding Layer ◽  
Diamond Coating ◽  
Diamond Coatings ◽  
Diamond Deposition ◽  
Fine Grained ◽  
High Adhesion ◽  
Bond Layer

Diamond coatings have been deposited by plasma enhanced chemical vapor deposition (PCVD) onto WC-Co cemented carbides by use of specially developed barrier interlayers, well compatible with cemented carbides. The barrier interlayer comprises a Ti-based layer adjacent to the substrate, which completely prevents both substrate decarburization and Co diffusion from the substrate, and a diamond-bonding layer needed to obtain high adhesion to the diamond coating. The diamond-bond layer is obtained by seeding the surface with nanograined diamond particles by laser ablation. Diamond deposition under controlled parameters allows one to obtain fine-grained and uniform diamond coatings. The diamond coating obtained in this way has a high adhesion to the cemented carbide substrate due to the enhanced interaction through the nanograined diamond interlayer.

Degradation of Silicon Carbide in Combustion Gas Flow at High-Temperature and Speed

2000 ◽  
Author(s):  
I. Yuri ◽  
T. Hisamatsu ◽  
Y. Etori ◽  
T. Yamamoto
Keyword(s):  
Silicon Carbide ◽  
Weight Loss ◽  
Water Vapor ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Flow Rate ◽  
Gas Flow ◽  
Gas Flow Rate ◽  
Vapor Partial Pressure ◽  
Water Vapor Partial Pressure

Effects of various basic factors of combustion gas flow conditions on degradation behaviors of silicon carbide have been experimentally determined. The exposure tests were performed for widely varied experimental parameters of the gas temperatures (T = 900–1500°C), pressure (P = 0.3–0.8MPa), gas flow rate (V = 50–250m/s), water vapor partial pressure (PH2O = 32–82kPa) and oxygen partial pressure (PO2 = 24–44kPa). Degradation behaviors of silicon carbide were expressed as the weight loss of the substrate. The weight loss rate depends on the water vapor partial pressure remarkably. The effect of the oxygen partial pressure on the weight loss was smaller than that of the water vapor partial pressure, and the weight loss decreased with the increase of the oxygen partial pressure. Considering the effects of partial pressures of oxygen and water vapor, the gas temperature and the pressure didn’t have much effect on the weight loss. The weight loss depends on the gas flow rate, the increase rate of the weight loss for the gas flow rate becomes small with the gas flow rate. Consequently, the water vapor partial pressure, the oxygen partial pressure, the gas temperature, the pressure and the gas flow rate dependence of the weight loss rate is expressed as PH2O1.9 V0.6 P0.3 / PO20.6.

Tribological Properties of Ceramics, Cermets, and Cemented Carbides

2021 ◽  
pp. 271-300
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Aluminum Oxide ◽  
Tribological Properties ◽  
Friction And Wear ◽  
Cemented Carbides

Abstract This chapter concerns itself with the tribology of ceramics, cermets, and cemented carbides. It begins by describing the composition and friction and wear behaviors of aluminum oxide, silicon carbide, silicon nitride, and zirconia. It then compares and contrasts the microstructure, properties, and relative merits of cermets with those of cemented carbides.

Spherical indentations on hafnium carbide- and silicon-carbide-coated carbon–carbon composites after thermal shock test in air

2020 ◽  
Vol 46 (13) ◽  
pp. 21233-21242 ◽  
Author(s):  
Kee Sung Lee ◽  
Zicheng Meng ◽  
Ihn-Cheol Sihn ◽  
Kyoon Choi ◽  
Ji Eun Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Thermal Shock ◽  
Carbon Composites ◽  
Thermal Shock Test ◽  
Hafnium Carbide ◽  
Shock Test ◽  
Coated Carbon

Development of Silicon Carbide Dry Etcher Using Chlorine Trifluoride Gas

2014 ◽  
Vol 778-780 ◽  
pp. 738-741 ◽  
Author(s):  
Dairi Yajima ◽  
Hitoshi Habuka ◽  
Tomohisa Kato
Keyword(s):  
Silicon Carbide ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Substrate Surface ◽  
Etching Rate ◽  
Numerical Calculations ◽  
Total Flow ◽  
Total Flow Rate ◽  
Gas Concentration ◽  
Rate Profile

A SiC dry etching reactor using chlorine trifluoride (ClF3) gas was designed and evaluated with the help of numerical calculations and experimental results. The etching rate was about 16 μm/min when the ClF3 gas concentration, the total flow rate and the SiC substrate temperature were 90%, 0.3 slm and 500 °C, respectively. The gas stream above the substrate surface was concluded to significantly affect the etching rate profile.

Synthesis of Silicon Carbide Powders from Iron Tailings

2009 ◽  
Vol 620-622 ◽  
pp. 237-240
Author(s):  
Xiao Meng Zhang ◽  
Li Hua Xu ◽  
Hong Shun Hao ◽  
Jian Ying Yang ◽  
Fang He
Keyword(s):  
Silicon Carbide ◽  
Flow Rate ◽  
Carbothermal Reduction ◽  
Reduction Method ◽  
Sintering Temperature ◽  
Holding Time ◽  
Carbon Addition ◽  
Argon Flow Rate ◽  
Argon Flow ◽  
Main Impurity

Silicon carbide powders were prepared by the carbothermal reduction method. The starting powders used were iron tailings and graphite. The XRD results showed that the main crystal phase was SiC and the main impurity was FexSiy in as-fabricated silicon carbide. The SEM results revealed that the grains of SiC-phase in as-fabricated silicon carbide were flaky-like or globular-like. It is found that the carbon addition and the reaction temperature play a key role to obtain SiC-phase, while the holding time and argon flow rate had a little effect on the yield of SiC as the excessive carbon addition are used. The optimum sintering temperature, holding time, argon flowing rate, the ratio of n(C): n(SiO2) are 1500 °C, 8 h, 0.6 L/min, 5:1, respectively.

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