scholarly journals Growth and Characterization of Cu2Zn1−xFexSnS4 Thin Films for Photovoltaic Applications

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1471
Author(s):  
Vanira Trifiletti ◽  
Giorgio Tseberlidis ◽  
Marco Colombo ◽  
Alberto Spinardi ◽  
Sally Luong ◽  
...  

Photovoltaics is a promising technology to produce sustainable energy, thanks to the high amount of energy emitted by the sun. One way of having solar cells with low production costs is to apply thin-film technology and with earth-abundant raw materials. A keen interest is arising in kesterite compounds, which are chalcogenides composed of abundant and non-toxic elements. They have already achieved excellent performance at the laboratory level. Here, we report the synthesis and characterization of mixed chalcogenides based on copper, zinc, iron, and tin. Solutions have been studied with different zinc and iron ratios. The distortion of the elementary cell of kesterite increases with the addition of iron until a phase transition to stannite occurs. The process of synthesis and deposition proposed herein is cheap and straightforward, based on the sol-gel technique. These thin films are particularly attractive for use in cheap and easily processable solar cells. The synthesized layers have been characterized by X-ray diffraction, UV-Vis absorption, and Raman, X-ray photoelectron, and energy-dispersive X-ray spectroscopy measurements.

2017 ◽  
Vol 5 (26) ◽  
pp. 6406-6419 ◽  
Author(s):  
Jie Ge ◽  
Yanfa Yan

Earth abundant Cu2BaSnS4 thin films hold great promise for use as solar absorbers in the photoelectrochemical water splitting and the top cell of tandem photovoltaic solar cells.


Author(s):  
Daqun Bao ◽  
Yi Zhang ◽  
Hang Guo

This paper presents the growth and characterization of PZT thin films by using the sol-gel technology. In this paper, we study the influences of annealing process and different substrates on the orientation and crystalline quality of PZT thin films. The crystallographic structures are tested by using X-ray diffractometer (XRD), and the residual stresses of PZT thin films are obtained by calculation from a derived stress-strain equation in XRD analysis. Moreover, surface morphology and microstructure of the films are investigated by using AFM and SEM, and the polarization hysteresis of PZT thin films is measured by using a Sawyer Tower circuit. The results show that PZT thin films prepared by using the sol-gel method have good properties and can be used for developing PZT-based micro and nano devices.


1997 ◽  
Vol 12 (3) ◽  
pp. 596-599 ◽  
Author(s):  
Ji Zhou ◽  
Qing-Xin Su ◽  
K. M. Moulding ◽  
D. J. Barber

Ba(Mg1/3Ta2/3)O3 thin films were prepared by a sol-gel process involving the reaction of barium isopropoxide, tantalum ethoxide, and magnesium acetate in 2-methoxyethanol and subsequently hydrolysis, spin-coating, and heat treatment. Transmission electron microscopy, x-ray diffraction, and Raman spectroscopy were used for the characterization of the thin films. It was shown that the thin films tend to crystallize with small grains sized below 100 nm. Crystalline phase with cubic (disordered) perovskite structure was formed in the samples annealed at a very low temperature (below 500 °C), and well-crystallized thin films were obtained at 700 °C. Although disordered perovskite is dominant in the thin films annealed below 1000 °C, a low volume fraction of 1 : 2 ordering domains was found in the samples and grows with an increase of annealing temperature.


1994 ◽  
Vol 343 ◽  
Author(s):  
P. F. Baude ◽  
J. S. Wright ◽  
C. Ye ◽  
L. F. Francis ◽  
D. L. Polla

ABSTRACT(PbBa)(ZrTiNb)03 thin films and powders have been prepared using the sol-gel technique. Solutions were synthesized in 2-methoxyethanol based upon our previous PZT solution preparation. Three different approaches were used for incorporating barium into PZT alkoxide solutions. Thermal analysis and x-ray diffraction results indicated that barium methoxypropoxide gave the best results. PBZTN (71% Pb and 71% Zr) was deposited onto sapphire substrates as well as oxidized silicon substrates. Optical transmission measurements showed greater than 80% transmission for wavelengths longer than 400 nm. Films with thickness of 3000 Å on sapphire exhibited a refractive index of 2.19 at λ=633 nm.


RSC Advances ◽  
2015 ◽  
Vol 5 (102) ◽  
pp. 84295-84302 ◽  
Author(s):  
Leilei Chen ◽  
Hongmei Deng ◽  
Jiahua Tao ◽  
Huiyi Cao ◽  
Ling Huang ◽  
...  

Earth-abundant Cu2MnSnS4 (CMTS) thin films were fabricated through a non-toxic spin-coating technique. For the first time we have demonstrated the fabrication of CMTS solar cells with a conversion efficiency of 0.49%, based on this method.


2003 ◽  
Vol 785 ◽  
Author(s):  
R. Guzman ◽  
M.S. Tomar ◽  
R.E. Melgarejo

ABSTRACTThere is a great deal of interest in CaCu3Ti4O12 system for dielectric applications. We have studied Ca1-xSrxCu3Ti4O12 system for different compositions. The material is synthesized by sol-gel chemical solution route and thin films were deposited by spin coating. Thin films were investigated by x-ray diffraction and Raman spectroscopy for structural properties. These results indicate a solid solution for the compositions x = 0.00 to 0.80. The SEM micrographs shows the uniform films at 800° C, but the dielectric response of Ca1-xSrxCu3Ti4O12 (x = 0.00) shows the dielectric constant value below 200.


2018 ◽  
Vol 10 (1) ◽  
pp. 26 ◽  
Author(s):  
Huseyn Mamedov ◽  
Syed Ismat Shah ◽  
Archil Chirakadze ◽  
Vusal Mammadov ◽  
Vusala Mammadova ◽  
...  

Heterojunctions of p-Si/Cd1-xZnxO were synthesized by depositing of Cd1-xZnxO films on p-Si substrates by electrochemical deposition. The morphological properties of the films were studied by scanning microscopy. The electric and photoelectrical properties of heterojunctions were investigated depending on the deposition potential and films composition. Heterojunctions of p-Si/Cd1-xZnxO, which deposited at cathode potential of -1.2 V, shows good rectification (k=1640). Under AM1.5 conditions the maximal values of open-circuit voltage, short-circuit current, fill factor and efficiency of our best nano-structured cell, were Uoc = 442 mV, Jsc = 19.9 mA/cm2, FF = 0.59 and n = 5.1 %, respectively. Full Text: PDF ReferencesX. Li, et al. "Role of donor defects in enhancing ferromagnetism of Cu-doped ZnO films", J. Appl. Phys., 105, 103914 (2009). CrossRef X. Han, K. Han and M. Tao, "Electrodeposition of Group-IIIA Doped ZnO as a Transparent Conductive Oxide", ECS Trans., 25, 93 (2010). CrossRef W. Liu et al. "Na-Doped p-Type ZnO Microwires", J. Am. Chem. Soc., 132, 2498 (2010). CrossRef R.A. Ismail and O.A. Abdulrazaq, "A new route for fabricating CdO/c-Si heterojunction solar cells", Sol. Energy Mater. Sol. Cells, 91, 903 (2007). CrossRef R.S. Mane, H.M. Pathan, C.D. Lokhande and S.H.Han, "An effective use of nanocrystalline CdO thin films in dye-sensitized solar cells", Sol. Energy, 80 185 (2006). CrossRef E. Martin et al. "Properties of multilayer transparent conducting oxide films", Thin Solid Films, 461, 309 (2004). CrossRef Y. Caglar, M. Caglar, S. Ilican and A. Ates, "Morphological, optical and electrical properties of CdZnO films prepared by sol?gel method", J. Phys. D: Appl. Phys., 42, 065421 (2009). CrossRef F. Wang, Z. Ye, D. Ma, L. Zhu and F. Zhuge, "Formation of quasi-aligned ZnCdO nanorods and nanoneedles", J. Cryst. Growth, 283, 373 (2005). CrossRef A. Abdinov, H. Mamedov, S. Amirova, "Investigation of Electrodeposited Glass/SnO2/CuInSe2/Cd1-xZnxS1-ySey/ZnO Thin Solar Cells", Jpn. J. Appl. Phys., 46, 7359 (2007). CrossRef A. Abdinov, H. Mamedov, H. Hasanov, and S. Amirova, "Photosensitivity of p,n-Si/n-Cd1?xZnxS heterojunctions manufactured by a method of electrochemical deposition", Thin Solid Films, 480-481, 388 (2005). CrossRef A. Abdinov, H. Mamedov, and S. Amirova, "Investigation of electrodeposited p-Si/Cd1 ? xZnxS1 ? ySey heterojunction solar cells", Thin Solid Films, 511-512, 140 (2006) CrossRef H. Mamedov, V. Mamedov, V. Mamedova, Kh. Ahmadova, "Investigation of p-GaAs/n-Cd1-xZnxS1-yTey/Cd1-xZnxO heterojunctions deposited by electrochemical deposition", J. Optoelectrom. Adv. M., 17, 67 (2015). DirectLink H. Mamedov et al. "Preparation and Investigation of p-GaAs/n-Cd1-xZnxS1-yTey Heterojunctions Deposited by Electrochemical Deposition", J. Solar Energy Engineering, 136, 044503 (2014). CrossRef S. Sadofev, S. Blumstengel, J. Cui, J. Puls, S. Rogaschewski, P. Schafer and F. Henneberger, "Visible band-gap ZnCdO heterostructures grown by molecular beam epitaxy", Appl. Phys. Lett., 89, 201907 (2006). CrossRef G. Torres-Delgado et al. "Percolation Mechanism and Characterization of (CdO)y(ZnO)1?y Thin Films", Adv. Funct. Mater., 12, 129 (2002). CrossRef H. Tabet-Derraz, N. Benramdane, D. Nacer, A. Bouzidi and M. Medles, "Investigations on ZnxCd1?xO thin films obtained by spray pyrolysis", Sol. Energy Mater. Sol. Cells, 73, 249 (2002). CrossRef M. Tortosa, M. Mollar and B. Mar?, "Synthesis of ZnCdO thin films by electrodeposition", J. Cryst. Growth, 304, 97 (2007). CrossRef A. Singh, D. Kumar, P. K. Khanna, M. Kumar, and B. Prasad, "Phase Segregation Limit in ZnCdO Thin Films Deposited by Sol?Gel Method: A Study of Structural, Optical and Electrical Properties", ECS Journal of Solid State Science and Technology, 2 (9), Q136 (2013). CrossRef F.Z. Bedia, A. Bedia, B. Benyoucef and S.Hamzaoui, "Electrical Characterization of n-ZnO/p-Si Heterojunction Prepared by Spray Pyrolysis Technique", Physics Procedia, 55, 61 (2014). CrossRef M. Jing-Jing et al. "Rectifying and Photovoltage Properties of ZnO:A1/p-Si Heterojunction", Chin. Phys. Lett., 27 (10), 107304 (2010). CrossRef


2017 ◽  
Vol 748 ◽  
pp. 413-417
Author(s):  
Chun Yu Long ◽  
Fang Fang Peng ◽  
Min Min Jin ◽  
Pei Song Tang ◽  
Hai Feng Chen

Using Pr (NO3)3, butyl titanate, ethylene glycol and citric acid as main raw materials, praseodymium titanate (Pr2Ti2O7) was prepared by the sol-gel process. The samples were characterized by means of X-ray diffraction (XRD), scanning electron microscope (SEM), thermal gravity-differential thermal analysis (TG-DTA), diffuse-reflection spectra (DRS) and Fourier transform infrared (FT-IR). The effect of different calcination temperature and illumination time on the photocatalytic properties of Pr2Ti2O7 was investigated. It was found that the single phase Pr2Ti2O7 could be obtained through sol-gel process and calcination at 1000 °C. The Pr2Ti2O7 samples calcination at 1000 °C were uniform , and the resulting product had a particle size of 200 nm and an optical band gap of 3.26 eV. Under ultraviolet light, the degradation of methyl orange arrived to 80.11% after 180 min of photocatalytic reaction. The Pr2Ti2O7 samples showed good photocatalytic activity for decomposition of methyl orange.


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