scholarly journals Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1026
Author(s):  
Mohammad Taghi Ahmadi ◽  
Ahmad Razmdideh ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Tight Binding ◽  
Band Gap Energy ◽  
Specific Structure ◽  
Partial Substitution ◽  
Generalized Gradient ◽  
Complete Replacement

The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused the opening of its gap. Now, an exciting possibility is a partial substitution of C atoms with B and N atoms in the graphene structure, which caused the formation of a boron nitride composite with specified stoichiometry. BC2N nanotubes are more stable than other triple compounds due to the existence of a maximum number of B–N and C–C bonds. This paper focused on the nearest neighbor’s tight-binding method to explore the dispersion relation of BC2N, which has no chemical bond between its carbon atoms. More specifically, the band dispersion of this specific structure and the effects of energy hopping in boron–carbon and nitrogen–carbon atoms on the band gap are studied. Besides, the band structure is achieved from density functional theory (DFT) using the generalized gradient approximations (GGA) approximation method. This calculation shows that this specific structure is semimetal, and the band gap energy is 0.167 ev.

scholarly journals Electronic Properties of Hydrogenated Hexagonal Boron Nitride (h-BN): DFT Study

2019 ◽  
Vol 4 (2) ◽  
pp. 72-79
Author(s):  
B. Chettri ◽  
P. K. Patra ◽  
Sunita Srivastava ◽  
Lalhriatzuala ◽  
Lalthakimi Zadeng ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Electronic Properties ◽  
Density Functional ◽  
Hydrogen Adsorption ◽  
Hexagonal Boron Nitride ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Generalized Gradient Approximation ◽  
The Density Functional Theory

In this work, we have constructed the hydrogenated hexagonal boron nitride (h-BN) by placing hydrogen atom at different surface sites. The possibility of hydrogen adsorption on the BN surface has been estimated by calculating the adsorption energy. The electronic properties were calculated for different hydrogenated BNs. The theoretical calculation was based on the Density Functional Theory (DFT). The electron-exchange energy was treated within the most conventional functional called generalized gradient approximation. The calculated band gap of pure BN is 3.80 eV. The adsorption of two H-atoms at two symmetrical sites of B and N sites reduces the band gap value to 3.5 eV. However, in all other combination the systems show dispersed band at the Fermi level exhibiting conducting behavior. Moreover, from the analysis of band structure and Density Of States we can conclude that, the hydrogenation tunes the band gap of hexagonal boron nitride.

Graphene-Based Sensors for Monitoring Strain

2013 ◽  
Vol 3 (1) ◽  
pp. 74-83
Author(s):  
M. Mirnezhad ◽  
R. Ansari ◽  
H. Rouhi ◽  
M. Faghihnasiri
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Strain Distribution ◽  
Density Functional ◽  
Tight Binding ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Gap Opening

The application of graphene as a nanosensor in measuring strain through its band structure around the Fermi level is investigated in this paper. The mechanical properties of graphene as well as its electronic structure are determined by using the density functional theory calculations within the framework of generalized gradient approximation. In the case of electronic properties, the simulations are applied for symmetrical and asymmetrical strain distributions in elastic range; also the tight-binding approach is implemented to verify the results. It is indicated that the energy band gap does not change with the symmetrical strain distribution but depend on the asymmetric strain distribution, increasing strain leads to band gap opening around the Fermi level.

Tuning Electronic and Structural Properties of Triple Layers of Intercalated Graphene and Hexagonal Boron Nitride: An Ab-initio Study.

2011 ◽  
Vol 1307 ◽  
Author(s):  
Samir S. Coutinho ◽  
David L. Azevedo ◽  
Douglas S. Galvão
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Ab Initio ◽  
Band Gap ◽  
External Electric Field ◽  
Structural Properties ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Electronic And Structural Properties ◽  
Gap Values

ABSTRACTRecently, several experiments and theoretical studies demonstrated the possibility of tuning or modulating band gap values of nanostructures composed of bi-layer graphene, bi-layer hexagonal boron-nitride (BN) and hetero-layer combinations. These triple layers systems present several possibilities of stacking. In this work we report an ab initio (within the formalism of density functional theory (DFT)) study of structural and electronic properties of some of these stacked configurations. We observe that an applied external electric field can alter the electronic and structural properties of these systems. With the same value of the applied electric field the band gap values can be increased or decreased, depending on the layer stacking sequences. Strong geometrical deformations were observed. These results show that the application of an external electric field perpendicular to the stacked layers can effectively be used to modulate their inter-layer distances and/or their band gap values.

Energy Band Gap Modification of Graphene Deposited on a Multilayer Hexagonal Boron Nitride Substrate

2012 ◽  
Vol 1407 ◽  
Author(s):  
Celal Yelgel ◽  
Gyaneshwar P. Srivastava
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Energy Band ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Monolayer Graphene ◽  
Stable Configuration ◽  
Equilibrium Geometry ◽  
Energy Band Gap ◽  
Electron Speed

ABSTRACTThe equilibrium geometry and electronic structure of graphene deposited on a multilayer hexagonal boron nitride (h-BN) substrate has been investigated using the density functional and pseudopotential theories. We found that the energy band gap for the interface between a monolayer graphene (MLG) and a monolayer BN (MLBN) lies between 47 and 62 meV, depending on the relative orientations of the layers. In the most energetically stable configuration the binding energy is found to be approximately 40 meV per C atom. Slightly away from the Dirac point, the dispersion curve is linear, with the electron speed almost identical to that for isolated graphene. The dispersion relation becomes reasonably quadratic for the interface between MLG and 4-layer-BN, with a relative effective mass of 0.0047. While the MLG/MLBN superlattice is metallic, the thinnest armchair nanoribbon of MLG/MLBN interface is semiconducting with a gap of 1.84 eV.

Optical Response of GaAs0.75Sb0.25 Nanosheet for Dependent Pressure

2020 ◽  
Vol 31 (3) ◽  
pp. 120
Author(s):  
Mazin Sherzad Othman
Keyword(s):  
High Pressure ◽  
Band Gap ◽  
Optical Conductivity ◽  
Density Functional ◽  
Optical Response ◽  
Band Gap Energy ◽  
Optical Data ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Optical Energy Band Gap

The study analyzed the optical response of GaAs0.75Sb0.25 nanosheet under high pressure. It is the generalized gradient approximation (GGA) within the framework of density functional theory (DFT) was employed by means of a simulation program, which is called CASTEP. Under different pressure (P = 0, 2, and 4 GPa). Geometry optimized parameters were calculated for the nanosheet. The optical data alter in accordance with high pressure. The increase of pressure in the nanosheet led to a rise in p = 4 GPa and a decline in p = 2 GPa of the optical energy band gap, the static dielectric constant 𝜀1(0), and optical conductivity. The discussions of the real 𝜀1(𝜔) and imaginary 𝜀2(𝜔) sections of the dielectric function, optical band gap energy, optical absorption, and optical conductivity were included.

scholarly journals Induced magnetic states upon electron-hole injection at B and N sites of hexagonal Boron Nitride bilayer: A DFT study

2021 ◽  
Author(s):  
B Chettri ◽  
P. K. Patra ◽  
Lalmuan Chhana ◽  
Lalhriat Zuala ◽  
Swati Verma ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Magnetic Moment ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Magnetic Semiconductor ◽  
Carbon Doping ◽  
Hole Injection ◽  
Carbon Doped ◽  
Bilayer System

We have reported the electronic, magnetic, and optical properties of the top layer carbon-doped hexagonal Boron Nitride(h-BN) bilayer at B/N-sites using the density functional theory implemented in Quantumwise VNL-ATK package. The calculated structural and electronic properties of the h-BN bilayer are in agreement with the previously reported results. A single carbon doping on B and N sites modifies the large band gap semiconducting behaviour of h-BN bilayer similar to dilute magnetic semi-conducting material with a net magnetic moment of 1.001 μ B and 0.998 μ B , respectively. For double doping at B/N sites net magnetic moment increases to 1.998 μ B and 1.824 μ B , respectively. Whereas for triply carbon doped bilayer system at B/N sites, the system changes to metallic behaviour. Upon carbon doping at N-site, we obtained transition from Non-Magnetic semiconductor(Pristine) → Magnetic semiconductor(1C) → Half-Metal ferromagnetic(2C) → Metal(3C). Whereas, in case of doping at the B-site, we observed transition from Non-Magnetic Semiconductor(Pristine) → Magnetic Semiconductor(1C) → Metal (2C, 3C). Analysis from the PDOS plot of the car- bon doped systems reveals that the net magnetic moments are contributed by the 2p orbitals of carbon and partial contribution from the neighboring nitrogen and boron atoms, respectively. As 1,2C doping at the B-site reduces the energy band gap to 0.81-1.8 eV which falls in the visible spectrum and thus such system further opens up an opportunity to be utilised as a photocatalys material. Our carbon doped systems show a magnetic semiconducting behavior with a nite magnetic moment which is one of the criteria for a spintronic material. So, our system looks promising in this regard. Also, Carbon doping can be considered as a simple approach to tune the band gap of the Boron Nitride bilayer system.

Graphene-Based Sensors for Monitoring Strain

2014 ◽  
pp. 602-611
Author(s):  
M. Mirnezhad ◽  
R. Ansari ◽  
H. Rouhi ◽  
M. Faghihnasiri
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Strain Distribution ◽  
Density Functional ◽  
Tight Binding ◽  
Density Functional Theory Calculations ◽  
Generalized Gradient ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Gap Opening

The application of graphene as a nanosensor in measuring strain through its band structure around the Fermi level is investigated in this paper. The mechanical properties of graphene as well as its electronic structure are determined by using the density functional theory calculations within the framework of generalized gradient approximation. In the case of electronic properties, the simulations are applied for symmetrical and asymmetrical strain distributions in elastic range; also the tight-binding approach is implemented to verify the results. It is indicated that the energy band gap does not change with the symmetrical strain distribution but depend on the asymmetric strain distribution, increasing strain leads to band gap opening around the Fermi level.

scholarly journals First Principles Study of High-Pressure Phases of ScN

2021 ◽  
Vol 66 (8) ◽  
pp. 699
Author(s):  
R. Yagoub ◽  
H. Rekkab Djabri ◽  
S. Daoud ◽  
N. Beloufa ◽  
M. Belarbi ◽  
...  
Keyword(s):  
Band Gap ◽  
First Principles ◽  
Density Functional ◽  
Correlation Energy ◽  
Band Gap Energy ◽  
Type Structure ◽  
Full Potential ◽  
Generalized Gradient ◽  
Direct Band Gap ◽  
Direct Band

We report the results of first-principles total-energy calculations for structural properties of scandium nitride (ScN) semiconductor compound in NaCl-type (B1), CsCl-type (B2), zincblende-type (B3), wurtzite-type (B4), NiAs-type (B81), CaSi-type (Bc), B-Sn-type (A5), and CuAu-type (L10) structures. Calculations have been performed with the use of the all-electron full-potential linearized augmented plane wave FP-LAPW method based on density-functional theory (DFT) in the generalized gradient approximation (GGA) for the exchange correlation energy functional. We predict a new phase transition from the most stable cubic NaCl-type structure (B1) to the B-Sn-type one (A5) at 286.82 GPa with a direct band-gap energy of about 1.975 eV. Our calculations show that ScN transforms from the orthorhombic CaSi-type structure (Bc) to A5 at 315 GPa. In agreement with earlier ab initio works, we find that B1 phase transforms to Bc, L10, and B2 structures at 256.27 GPa, 302.08 GPa, and 325.97 GPa, respectively. The electronic structure of A5 phase shows that ScN exhibits a direct band-gap at X point, with Eg of about 1.975 eV.

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