scholarly journals Micro-Structure Modelling and Electrical Properties Analysis of PZT Matrix Ferroelectric Composites

Materials ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 448 ◽  
Author(s):  
Weibin Zhou ◽  
Jinbo Fan ◽  
Zhenchao Xin ◽  
Guodong You
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Random Access ◽  
Volume Ratio ◽  
Experimental Results ◽  
The Real ◽  
High Dielectric Permittivity ◽  
Important Research Topic ◽  
Microstructure Model ◽  
High Dielectric

PZT matrix ferroelectric composite is an important research topic in material science because of its many practical, industrial, and scientific applications. Materials with high dielectric permittivity are used to manufacture electronic devices, particularly capacitors and dynamic random access memory (DRAM). Therefore, the development of reliable and efficient micro models to be utilized in analyzing electrical properties can be of great value in accelerating research in this field. In this paper, a 3D microstructure model for PZT matrix ferroelectric composites has been developed and adopted the finite element method (FEM) to calculate the dielectric constant. The microscopy parameters of developed microstructure model are acquired based on the real composites from X-ray (micro-) diffraction and stereological method. The dielectric constant of different volume ratios of PZT matrix ferroelectric composites can be calculated by accurately controlling the volume of Ferrite particles. At the point of validation, the proposed approach makes visual and numeric comparisons between the morphology of the real microstructure and the model generated by the proposed technique. The simulation results by our method was essentially in agreement with experimental results in other literature. Simulation Experimental results also demonstrate that the dielectric constant of PZT matrix ferroelectric composites is significantly changed while the volume ratio of high dielectric phase particles was below 20%. PZT matrix ferroelectric composites Consequently, this method can be easily extended to composites preparation.

scholarly journals STRUCTURAL AND ELECTRICAL PROPERTIES OF TANTALUM PENTAOXIDE (Ta2O5) THIN FILMS – A REVIEW

2013 ◽  
Vol 22 ◽  
pp. 564-569
Author(s):  
KANTA RATHEE ◽  
B. P. MALIK
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Electrical Properties ◽  
Metal Oxide ◽  
High Dielectric Constant ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Structural And Electrical Properties ◽  
High Dielectric ◽  
Deposited Films

Down scaling of complementary metal oxide semiconductor transistors has put limitations on silicon dioxide to be used as an effective dielectric. It is necessary to replace the SiO 2 with a physically thicker layer of oxides of high dielectric constant. Thus high k dielectrics are used to suppress the existing challenges for CMOS scaling. Many new oxides are being evaluated as gate dielectrics such as Ta2O5 , HfO2 , ZrO2 , La2O3 , HfO2 , TiO2 , Al2O3 , Y2O3 etc but it was soon found that these oxides in many respects have inferior electronic properties to SiO2 . But the the choice alone of suitable metal oxide with high dielectric constant is not sufficient to overcome the scaling challenges. The various deposition techniques and the conditions under which the thin films are deposited plays important role in deciding the structural and electrical properties of the deposited films. This paper discusses in brief the various deposition conditions which are employed to improve the structural and electrical properties of the deposited films.

THE STUDY OF HIGH DIELECTRIC CONSTANT MECHANISM OF La-DOPED Ba0.67Sr0.33TiO3 CERAMICS

2018 ◽  
Vol 25 (02) ◽  
pp. 1850056
Author(s):  
JING XU ◽  
BO HE ◽  
HAN XING LIU
Keyword(s):  
Dielectric Constant ◽  
Rare Earth ◽  
High Dielectric Constant ◽  
Temperature Stability ◽  
Current Voltage ◽  
Microstructure Model ◽  
Bst Ceramics ◽  
High Dielectric ◽  
Rare Earth La ◽  
La Doped

It is a common and effective method to enhance the dielectric properties of BST ceramics by adding rare-earth elements. In this paper, it is important to analyze the cause of the high dielectric constant behavior of La-doped BST ceramics. The results show that proper rare earth La dopant ([Formula: see text]) may greatly increase the dielectric constant of BST ceramics, and also improve the temperature stability, evidently. According to the current–voltage ([Formula: see text]–[Formula: see text]) characteristics, the proper La-doped BST ceramics may reach the better semiconductivity, with the decrease and increase in La doping, the ceramics are insulators. By using the Schottky barrier model and electric microstructure model to find the surface or grain boundary potential barrier height, the width of the depletion layer and grain size do play an important role in impacting the dielectric constant.

A new single/few-layered graphene oxide with a high dielectric constant of 106: contribution of defects and functional groups

RSC Advances ◽  
2015 ◽  
Vol 5 (19) ◽  
pp. 14768-14779 ◽  
Author(s):  
K. Santhosh Kumar ◽  
Suresh Pittala ◽  
Srinath Sanyadanam ◽  
Pradip Paik
Keyword(s):  
Dielectric Constant ◽  
Graphene Oxide ◽  
Dielectric Permittivity ◽  
Functional Groups ◽  
High Dielectric Constant ◽  
Frequency Range ◽  
Temperature Range ◽  
High Dielectric Permittivity ◽  
High Dielectric

In this study, we introduce a single/few-layered graphene oxide (GO) synthesized with ultrasonication, and demonstrate its high dielectric permittivity in the frequency range of 20 Hz to 2 MHz and temperature range of 30 °C to 180 °C.

Electrical Properties of Elastomers and Related Polymers

1963 ◽  
Vol 36 (5) ◽  
pp. 1230-1302 ◽  
Author(s):  
Archibald T. McPherson
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Price Competition ◽  
Modern Technology ◽  
Point Of View ◽  
Electrical Behavior ◽  
Electrical Measurements ◽  
Wide Range ◽  
The Individual ◽  
High Dielectric

Abstract Interest in the electrical behavior of elastomers stems from several widely different sources. From the theoretical standpoint electrical measurements provide a valuable tool for the study of the molecular structure of elastomers and other polymers and the relation of structure to properties. From a practical point of view an understanding of the electrical behavior enables the manufacturer of wire and cable to produce insulation that will better withstand the severe conditions of space flight, or that will meet price competition and show a profit. The present day applications of elastomers are so many and varied that nearly any type of compound is likely to be employed for some practical purpose. A cable for x-ray equipment, for example, may be made wholly from elastomers with conductor, insulation, and jacket each from a different compound. At one time when almost the only electrical use of rubber was to provide the highest practical degree of electrical insulation it was correct to speak of “good” and “poor” electrical properties. Now, however, an elastomer that is a poor insulator may be excellent in an antistatic application. Communication cables require an insulation of the lowest practical dielectric constant, but for power cables a layer of insulation of high dielectric constant next to the conductor may be essential to prevent excessive electrical stresses. Modern technology not only calls for a wide diversity of electrical properties but it often requires further that elastomers having these properties be available in a wide range of mechanical properties. For example, the insulation on a cable for use in an airplane must be as thin and light as possible to save weight while an unarmored cable for laying in shallow water must have insulation that is thick and tough for mechanical protection and of high specific gravity to prevent the cable's being moved by waves or tide. Thus, the diversity of present and possible future applications is such that no one in the industry is likely to escape for long some contact with an application involving an electrical property. Accordingly, this review has been prepared to acquaint the rubber chemist and technologist with current information in the field. In the 25 years that have elapsed since an earlier review was prepared by the same author a great deal of work has been done on the relation between the properties of polymers and their molecular composition and structure. It is now possible to predict the properties of some polymers from their structural formulas, and a beginning has been made in relating the properties of simple elastomeric compounds to the properties of the different ingredients. However, knowledge in the field is still far from the state at which it would be possible to compile a table of functions such that the electrical properties of a multi-ingredient insulating compound could be computed from the properties of the individual ingredients.

Ferroelectric nanocomposite with high dielectric constants

2002 ◽  
Vol 755 ◽  
Author(s):  
Mai T.N. Pham ◽  
B.A. Boukamp ◽  
H.J.M. Bouwmeester ◽  
D.H.A. Blank
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Ferroelectric Material ◽  
Metallic Phase ◽  
Dielectric Constants ◽  
Effective Dielectric Constant ◽  
X Ray Diffraction ◽  
Non Volatile Memory ◽  
Colloidal Method ◽  
High Dielectric

ABSTRACTComposites between ferroelectric material and a dispersed metal phase are of great interest due to the improvement in dielectric properties for such applications as high capacitance capacitors, non-volatile memory, ect. Using a colloidal method, Pt particles with a size of 3–5 nm were dispersed homogeneously in a PZT (PbZr0.53Ti0.43O3) matrix. No unwanted reaction phase between PZT and Pt during sintering at 1150 °C could be detected by X-ray diffraction. Electrical properties were investigated by impedance spectroscopy measurement. The effective dielectric constant increased remarkably as a power function of Pt volume content and can be described by the percolation theory. At 25 vol.% of Pt the dielectric constant of the composite is 4 times larger than that of pure PZT. The temperature dependence of the electrical properties is also influenced by the metallic phase fraction.

Study of SrTiO3 Gate Dielectrics

2006 ◽  
Vol 966 ◽  
Author(s):  
C.Y. Liu ◽  
Tseung-Yuen Tseng
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Silicon Substrate ◽  
Interfacial Layer ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Measurement Techniques ◽  
High Quality ◽  
High Dielectric

ABSTRACTAmong various possible candidates of high-k gate dielectrics, SrTiO3 plays an important role because it has high dielectric constant and it can be epitaxially grown on silicon substrate. The fabrication process and properties of SrTiO3 gate dielectrics are reported. The effect of the addition of SiO2 on the microstructure and electrical properties of SrTiO3 gate dielectric is also presented. The minimization of the effect of interfacial layer between SrTiO3 and Si is the most important issue for obtaining high quality high-k gate dielectrics. The possible methods to improve the interfacial properties and the measurement techniques to characterize the interfacial layer are discussed.

Effect of Mn, Si on Varistor-Dielectric Characteristics of Nb-doped SrTiO3 Ceramics

2012 ◽  
Vol 239-240 ◽  
pp. 1604-1608
Author(s):  
Ning Zhang Wang ◽  
Jian Ye Li ◽  
Ji Ning ◽  
Jing Liu
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Dielectric Loss ◽  
Nonlinear Coefficient ◽  
Experimental Results ◽  
Dielectric Characteristics ◽  
Srtio3 Ceramics

The varistor-dielectric characteristics of SrTiO3 ceramics with various amounts of MnCO3 and SiO2 additives was studied. The experimental results show that , with the increase of added amounts of MnCO3, the resistivity (ρ), nonlinear coefficient (α) and varistor voltage (V10mA) increase firstly and then decrease while the dielectric constant (ε) and dielectric loss (tgδ) decrease firstly and then increase. The best added amount of SiO2 is 0.4wt% because the electrical properties of SrTiO3 ceramics drop when x(SiO2)>0.4wt%.The SrTiO3 based ceramic, with the doping of 0.5mol%Nb2O5+0.5mol%MnCO3+0.4wt%SiO2, the better microstructure and electrical properties can be obtained.

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