scholarly journals Influence Mechanism of Cu Layer Thickness on Photoelectric Properties of IWO/Cu/IWO Films

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 113 ◽  
Author(s):  
Fengbo Han ◽  
Wenyuan Zhao ◽  
Ran Bi ◽  
Feng Tian ◽  
Yadan Li ◽  
...  
Keyword(s):  
Layer Thickness ◽  
Optical Transmittance ◽  
Transparent Electrode ◽  
Infrared Range ◽  
X Ray Diffraction ◽  
Mid Infrared ◽  
Photoelectric Properties ◽  
Xrd Patterns ◽  
Quartz Substrates ◽  
Iron Manganese

Transparent conductive IWO/Cu/IWO (W-doped In2O3) films were deposited on quartz substrates by magnetron sputtering of IWO and Cu in the Ar atmosphere. The X-ray diffraction (XRD) patterns identified the cubic iron–manganese ore crystal structure of the IWO layers. The influence of the thickness of the intermediate ultra-thin Cu layers on the optical and electrical properties of the multilayer films was analyzed. As the Cu layer thickness increases from 4 to 10 nm, the multilayer resistivity gradually decreases to 4.5 × 10−4 Ω·cm, and the optical transmittance in the mid-infrared range increases first and then decreases with a maximum of 72%, which serves as an excellent candidate for the mid-infrared transparent electrode.

scholarly journals Epitaxial growth of β-Ga2O3 thin films on Ga2O3 and Al2O3 substrates by using pulsed laser deposition

2019 ◽  
Vol 09 (04) ◽  
pp. 1950032 ◽  
Author(s):  
Yuxin An ◽  
Liyan Dai ◽  
Ying Wu ◽  
Biao Wu ◽  
Yanfei Zhao ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Ultraviolet Region ◽  
X Ray Diffraction ◽  
Chemical Cleaning ◽  
Transmission Electron ◽  
Xrd Patterns

In this work, we have successfully grown high quality epitaxial [Formula: see text]-Ga2O3 thin films on [Formula: see text]-Ga2O3 (100) and Al2O3(0001) substrates using pulsed laser deposition (PLD). By optimizing temperature and oxygen pressure, the best conditions were found to be 650–700∘C and 0.5[Formula: see text]Pa. To further improve the quality of hetero-epitaxial [Formula: see text]-Ga2O3, the sapphire substrates were pretreated for atomic terraced surface by chemical cleaning and high temperature annealing. From the optical transmittance measurements, the films grown at 600–750∘C exhibit a clear absorption edge at deep ultraviolet region around 250–275[Formula: see text]nm wavelength. High resolution transmission electron microscope (HRTEM) images and X-ray diffraction (XRD) patterns demonstrate that [Formula: see text]-Ga2O3(-201)//Al2O3(0001) epitaxial texture dominated the epitaxial oxide films on sapphire substrate, which opens up the possibilities of high power electric devices.

Thermo-Optical Properties of Nd0.3Sm0.7NiO3 Ceramic

2008 ◽  
Vol 55 ◽  
pp. 7-12
Author(s):  
Cecile Napierala ◽  
Mathieu Edely ◽  
Patrick Laffez ◽  
Laurent Sauques
Keyword(s):  
Phase Transition ◽  
Sol Gel ◽  
Optical Measurements ◽  
Infrared Range ◽  
X Ray Diffraction ◽  
Optical Contrast ◽  
Metal Insulator ◽  
Mid Infrared ◽  
X Ray ◽  
Insulator Phase Transition

Nd0.3Sm0.7NiO3 ceramic has been synthesised using a sol-gel method and annealing at oxygen pressure. Nd0.3Sm0.7NiO3 exhibits a reversible metal insulator phase transition which is, in the infrared range, responsible of a thermal-optical contrast. Samples are structurally characterized by X-ray diffraction and thermogravimetric analysis. The Nd0.3Sm0.7NiO3 thermal – optical contrast is characterized in the mid-infrared range, using reflectance and thermal-optical measurements.

High photoelectric PPV/PVA/Ag composite nanofibers by co-electrospinning

2015 ◽  
Vol 35 (7) ◽  
pp. 689-697 ◽  
Author(s):  
Yang Gao ◽  
Zhiyao Sun ◽  
Liguo Sun ◽  
Cheng Wang ◽  
Shuhong Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Composite Nanofibers ◽  
Average Diameter ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
Ag Nps ◽  
Photoelectric Properties ◽  
Transmission Electron ◽  
Face Centered ◽  
Xrd Patterns

Abstract Poly(phenylene vinylene)/polyvinyl alcohol/Ag (PPV/PVA/Ag) composite nanofibers with excellent photoelectric properties were prepared by coaxial electrospinning using PPV/PVA as the shell and Ag nanoparticles (NPs) as the core, Ag NPs aqueous solution was prepared by the reduction method. The results of scanning electron microscopy (SEM) and transmission electron microscopy (TEM) showed that Ag NPs are of a face-centered cubic structure, with an average diameter of 46 nm and the composite nanofibers have uniform and continuous morphology. With increasing Ag content, the diameters of the composite nanofibers decreased from 653 nm to 250 nm. The X-ray diffraction (XRD) patterns verified that in the composite nanofibers, the Ag NPs are not transformed. In the photoluminescence spectra, the PPV/PVA/Ag composite nanofibers presented red-shift compared with PPV/PVA nanofibers. Under illumination, the as-prepared PPV/PVA/Ag composite nanofibers exhibited relatively high photocurrent intensity.

High Transmission and Low Resistivity Cadmium Tin Oxide Thin Films Deposited by Sol-Gel

2014 ◽  
Vol 1675 ◽  
pp. 151-156 ◽  
Author(s):  
Carolina. J. Diliegros Godines ◽  
Rebeca Castanedo Pérez ◽  
Gerardo Torres Delgado ◽  
Orlando Zelaya Ángel
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Sol Gel ◽  
Dip Coating ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Corning Glass ◽  
Vacuum Atmosphere ◽  
Xrd Patterns ◽  
Quartz Substrates

ABSTRACTTransparent conducting cadmium tin oxide (CTO) thin films were obtained from a mixture of CdO and SnO2 precursor solutions by the dip-coating sol-gel technique. The thin films studied in this work were made with 7 coats (∼200 nm) on corning glass and quartz substrates. Each coating was deposited at a withdrawal speed of 2 cm/min, dried at 100°C for 1 hour and then sintered at 550°C for 1 hour in air. In order to decrease the resistivity values of the films, these were annealed in a vacuum atmosphere and another set of films were annealed in an Ar/CdS atmosphere. The annealing temperatures (Ta) were 450°C, 500°C and 550°C, as well as 600°C and 650°C, when corning glass and quartz substrates were used, respectively. X-Ray diffraction (XRD) patterns of the films annealed in a vacuum showed that there is only the presence of CTO crystals for 450°C≤ Ta ≤ 600°C and CTO+SnO2 crystals for Ta=650°C. The films annealed in Ar/CdS atmosphere were only constituted of CTO crystals independent of the Ta. The minimum resistivity value obtained was ∼4 x 10-4 Ωcm (Rsheet= 20 Ω/□) for the films deposited on quartz and annealed at Ta=600°C under an Ar/CdS atmosphere. The films deposited on quartz showed the higher optical transmission (∼90%) with respect to the films deposited on corning glass substrates (∼85%) in the Uv-vis region. For their optical and electrical characteristics, these films are good candidates as transparent electrodes in solar cells.

Effect of the ZnO Buffer Layer Thickness on AZO Film Properties

2012 ◽  
Vol 562-564 ◽  
pp. 81-84
Author(s):  
Cheng Hua Sui ◽  
Bin Liu ◽  
Tian Ning Xu ◽  
Bo Yan ◽  
Gao Yao Wei
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Visible Region ◽  
Optical Transmittance ◽  
Electron Beam Evaporation ◽  
Zno Films ◽  
Diffraction Measurement ◽  
Buffer Layer Thickness ◽  
Zno Buffer Layer ◽  
Quartz Substrates

To evaluate the influence of the ZnO buffer layer thickness on structural, electrical and optical properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films were deposited on the quartz substrates by electron beam evaporation. X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties results show that the resistivity decreases initial and then increases. However, optical transmittance of all the films is >80% regardless of the buffer layer thickness in the visible region. The results illustrate that the insertion of ZnO buffer layer can improve the film performance.

Structural and Magnetic Hysteresis Properties of Co-Zr Substituted Hexagonal Barium Ferrites

2015 ◽  
Vol 7 (1) ◽  
pp. 1346-1351
Author(s):  
Ch.Gopal Reddy ◽  
Ch. Venkateshwarlu ◽  
P. Vijaya Bhasker Reddy
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Magnetic Hysteresis ◽  
Grain Morphology ◽  
Hexagonal Structure ◽  
Ion Composition ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
Barium Ferrites ◽  
Xrd Patterns

Co-Zr substituted M-type hexagonal barium ferrites, with chemical formula BaCoxZrxFe12-2xO19 (where x = 0.0, 0.2, 0.4, 0.6, 0.8 and 1.0), have been synthesized by double sintering ceramic method. The crystallographic properties, grain morphology and magnetic properties of these ferrites have been investigated by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and Vibrating Sample Magnetometer (VSM). The XRD patterns confirm the single phase with hexagonal structure of prepared ferrites. The magnetic properties have been investigated as a function of Co and Zr ion composition at an applied field in the range of 20 KOe. These studies indicate that the saturation magnetization (Ms) in the samples increases initially up to the Co-Zr composition of x=0.6 and decreases thereafter. On the other hand, the coercivity (Hc) and Remanent magnetization (Mr) are found to decrease continuously with increasing Co-Zr content. This property is most useful in permanent magnetic recording. The observed results are explained on the basis of site occupation of Co and Zr ions in the samples.

scholarly journals UV-A Treatment of ZrO2 Thin Films Fabricated by Environmental Friendlier Water-Based Solution Processing: Structural and Optical Studies

Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 821
Author(s):  
Aneeqa Bashir ◽  
Mehwish Farooq ◽  
Abdul Malik ◽  
Shahzad Naseem ◽  
Arshad Saleem Bhatti
Keyword(s):  
Optical Properties ◽  
Low Cost ◽  
Annealed Film ◽  
Optical Transmittance ◽  
Amorphous Structure ◽  
Solution Processing ◽  
Vis Spectroscopy ◽  
Water Based ◽  
Free Films ◽  
Quartz Substrates

An environmentally friendlier solution processing has been introduced to fabricate zirconium oxide (ZrO2) films on quartz substrates, using spin coating of simple water-based solution. The films cured with UV-A = 330 nm for different times (40, 80, 120 min) were investigated for structural and optical properties and compared with thermally annealed film (at 350 °C). XRD and Raman spectroscopy showed amorphous structure in all the samples with no significant phase transformation with UV-A exposure. AFM microscopy showed smooth and crack free films with surface roughness ≤2 nm that reduced with UV-A exposure. Ultraviolet-visible (UV–Vis) spectroscopy demonstrated optical transmittance ≥88% and energy band gap variations as 4.52–4.70 eV. Optical constants were found from spectroscopic ellipsometry (SE). The refractive index (n) values, measured at 470 nm increased from 1.73 to 2.74 as the UV-A exposure prolonged indicating densification and decreasing porosity of the films. The extinction coefficient k decreased from 0.32 to 0.19 indicating reduced optical losses in the films under the UV-A exposure. The photoluminescence (PL) spectra exhibited more pronounced UV emissions which grew intense with UV-A exposure thereby improving the film quality. It is concluded that UV-A irradiation can significantly enhance the optical properties of ZrO2 films with minimal changes induced in the structure as compared to thermally treated film. Moreover, the present work indicates that water-based solution processing has the potential to produce high-quality ZrO2 films for low cost and environmental friendlier technologies. The work also highlights the use of UV-A radiations as an alternate to high temperature thermal annealing for improved quality.

scholarly journals Irregular Electrodeposition of Cu-Sn Alloy Coatings in [EMIM]Cl Outside the Glove Box with Large Layer Thickness

Coatings ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 310
Author(s):  
Lars Lehmann ◽  
Dominik Höhlich ◽  
Thomas Mehner ◽  
Thomas Lampke
Keyword(s):  
Layer Thickness ◽  
Alloy System ◽  
Liquid Solution ◽  
Complexing Agents ◽  
X Ray Diffraction ◽  
X Ray ◽  
Argon Stream ◽  
Ionic Liquid Solution ◽  
The Relationship ◽  
Layer Composition

Thick Cu−Sn alloy layers were produced in an [EMIM]Cl ionic-liquid solution from CuCl2 and SnCl2 in different ratios. All work, including the electrodeposition, took place outside the glovebox with a continuous argon stream over the electrolyte at 95 °C. The layer composition and layer thickness can be adjusted by the variation of the metal-salts content in the electrolyte. A layer with a thickness of up to 15 µm and a copper content of up to ωCu = 0.86 was obtained. The phase composition was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray fluorescence (XRF). Furthermore, it was found that the relationship between the alloy composition and the concentration of the ions in the electrolyte is described as an irregular alloy system as according to Brenner. Brenner described such systems only for aqueous electrolytes containing complexing agents such as cyanide. In this work, it was confirmed that irregular alloy depositions also occur in [EMIM]Cl.

scholarly journals Influence of Li2CO3 addition on electrical and magnetic properties of Ni0.6Mg0.4Fe2O4

2020 ◽  
Vol 10 (03) ◽  
pp. 2050003
Author(s):  
M. R. Hassan ◽  
M. T. Islam ◽  
M. N. I. Khan
Keyword(s):  
Magnetic Properties ◽  
Single Phase ◽  
Low Frequency ◽  
Solid State Reaction Method ◽  
Charge Carriers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrical And Magnetic Properties ◽  
Frequency Regime ◽  
Xrd Patterns

In this research, influence of adding Li2CO3 (at 0%, 2%, 4%, 6%) on electrical and magnetic properties of [Formula: see text][Formula: see text]Fe2O4 (with 60% Ni and 40% Mg) ferrite has been studied. The samples are prepared by solid state reaction method and sintered at 1300∘C for 6[Formula: see text]h. X-ray diffraction (XRD) patterns show the samples belong to single-phase cubic structure without any impurity phase. The magnetic properties (saturation magnetization and coercivity) of the samples have been investigated by VSM and found that the higher concentration of Li2CO3 reduces the hysteresis loss. DC resistivity increases with Li2CO3 contents whereas it decreases initially and then becomes constant at lower value with temperature which indicates that the studied samples are semiconductor. The dielectric dispersion occurs at a low-frequency regime and the loss peaks are formed in a higher frequency regime, which are due to the presence of resonance between applied frequency and hopping frequency of charge carriers. Notably, the loss peaks are shifted to the lower frequency with Li2CO3 additions.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Sign in / Sign up

Export Citation Format

Share Document