scholarly journals Phase and Orientation Control of NiTiO3 Thin Films

Materials ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 112 ◽  
Author(s):  
Jon Einar Bratvold ◽  
Helmer Fjellvåg ◽  
Ola Nilsen

Subtle changes in the atomic arrangement of NiTiO3 in the ilmenite structure affects its symmetry and properties. At high temperatures, the cations are randomly distributed throughout the structure, resulting in the corundum structure with R−3c symmetry. Upon cooling, the cations order in alternating layers along the crystallographic c axis, resulting in the ilmenite structure with R−3 symmetry. Related to this is the R3c symmetry, where the cations alternate both perpendicularly and along the c axis. NiTiO3 with the latter structure is highly interesting as it exhibits ferroelectric properties. The close relationship between structure and properties for ilmenite-related structures emphasizes the importance of being able to control the symmetry during synthesis. We show that the orientation and symmetry of thin films of NiTiO3 formed by atomic layer deposition (ALD) can be controlled by choice of substrate. The disordered phase (R−3c), previously only observed at elevated temperatures, have been deposited at 250 °C on α-Al2O3 substrates, while post-deposition annealing at moderate temperatures (650 °C) induces ordering (R−3). We have in addition explored the symmetry and epitaxial orientation obtained when deposited on substrates of LaAlO3(100), SrTiO3(100) and MgO(100). The presented work demonstrates the possibilities of ALD to form metastable phases through choice of substrates.

2021 ◽  
Vol 7 (2) ◽  
pp. 2000819 ◽  
Author(s):  
Dong Gun Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
Haengha Seo ◽  
Tae Kyun Kim ◽  
...  

2017 ◽  
Vol 111 (13) ◽  
pp. 132903 ◽  
Author(s):  
M. G. Kozodaev ◽  
A. G. Chernikova ◽  
E. V. Korostylev ◽  
M. H. Park ◽  
U. Schroeder ◽  
...  

2006 ◽  
Vol 496 (2) ◽  
pp. 346-352 ◽  
Author(s):  
Jenni Harjuoja ◽  
Anne Kosola ◽  
Matti Putkonen ◽  
Lauri Niinistö

RSC Advances ◽  
2016 ◽  
Vol 6 (100) ◽  
pp. 98337-98343 ◽  
Author(s):  
Felix Mattelaer ◽  
Tom Bosserez ◽  
Jan Rongé ◽  
Johan A. Martens ◽  
Jolien Dendooven ◽  
...  

Manganese oxide thin films were obtained by a combination of atomic layer deposition and post-deposition annealing, and the viability of these thin films as thin film catalysts for solar hydrogen devices has been demonstrated.


2004 ◽  
Vol 811 ◽  
Author(s):  
J.F. Conley ◽  
D.J. Tweet ◽  
Y. Ono ◽  
G. Stecker

AbstractThin films deposited via atomic layer deposition at low temperature tend to be less dense than bulk material and typically require high temperature post deposition annealing for densification and removal of unreacted precursor ligands. We have found that improved film densification can be achieved by interval annealing, in which in-situ moderate temperature (∼420°C) rapid thermal anneals are performed after every n deposition cycles. HfO2 film density and refractive index were found to increase with decreasing anneal interval (more frequent annealing). The highest density films could be achieved only by every-cycle annealing and could not be achieved by post deposition annealing. The densified every cycle annealed films have been shown to have improved equivalent thickness and leakage and decreased interfacial layer thickness.


Author(s):  
Lauri Aarik ◽  
Hugo Mändar ◽  
Peeter Ritslaid ◽  
Aivar Tarre ◽  
Jekaterina Kozlova ◽  
...  

2019 ◽  
Vol 58 (SD) ◽  
pp. SDDE07 ◽  
Author(s):  
Jun-Dao Luo ◽  
He-Xin Zhang ◽  
Zheng-Ying Wang ◽  
Siang-Sheng Gu ◽  
Yun-Tien Yeh ◽  
...  

2015 ◽  
Vol 44 (17) ◽  
pp. 8001-8006 ◽  
Author(s):  
E. Ahvenniemi ◽  
M. Matvejeff ◽  
M. Karppinen

An atomic layer deposition (ALD) process has been developed to fabricate quaternary oxide (La,Sr)CoO3 thin films in a well-controlled manner within a wide composition range. A post-deposition treatment crystallizes the films in a perovskite structure. The new process has true potential to be employed in future applications like IT-SOFCs.


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