scholarly journals On-Chip Miniaturized Bandpass Filter Using GaAs-Based Integrated Passive Device Technology For L-Band Application

Materials ◽  
2019 ◽  
Vol 12 (18) ◽  
pp. 3045 ◽  
Author(s):  
Bao-Hua Zhu ◽  
Nam-Young Kim ◽  
Zhi-Ji Wang ◽  
Eun-Seong Kim
Keyword(s):  
Printed Circuit Board ◽  
Bandpass Filter ◽  
Circuit Board ◽  
Center Frequency ◽  
Performance Measurements ◽  
Passive Device ◽  
Bridge Structures ◽  
Embedded Capacitor ◽  
On Chip ◽  
Insertion Losses

In this work, a miniaturized bandpass filter (BPF) constructed of two spiral intertwined inductors and a central capacitor, with several interdigital structures, was designed and fabricated using integrated passive device (IPD) technology on a GaAs wafer. Five air-bridge structures were introduced to enhance the mutual inductive effect and form the differential geometry of the outer inductors. In addition, the design of the differential inductor combined with the centrally embedded capacitor results in a compact construction with the overall size of 0.037λ0 × 0.019λ0 (1537.7 × 800 μm2) where λ0 is the wavelength of the central frequency. For the accuracy evolution of the equivalent circuit, the frequency-dependent lumped elements of the proposed BPF was analyzed and modeled through the segment method, mutual inductance approach, and simulated scattering parameters (S-parameters). Afterward, the BPF was fabricated using GaAs-based IPD technology and a 16-step manufacture flow was accounted for in detail. Finally, the fabricated BPF was wire-bonded with Au wires and packaged onto a printed circuit board for radio-frequency performance measurements. The measured results indicate that the implemented BPF possesses a center frequency operating at 2 GHz with the insertion losses of 0.38 dB and the return losses of 40 dB, respectively, and an ultrawide passband was achieved with a 3-dB fraction bandwidth of 72.53%, as well. In addition, a transmission zero is located at 5.32 GHz. Moreover, the variation of the resonant frequency with different inductor turns and metal thicknesses was analyzed through the simulation results, demonstrating good controllability of the proposed BPF.

scholarly journals A Microfabricated Bandpass Filter with Coarse-Tuning and Fine-Tuning Ability Based on IPD Process and PCB Artwork

Micromachines ◽  
2022 ◽  
Vol 13 (1) ◽  
pp. 123
Author(s):  
Junzhe Shen ◽  
Tian Qiang ◽  
Minjia Gao ◽  
Yangchuan Ma ◽  
Junge Liang ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Bandpass Filter ◽  
Fine Tuning ◽  
Circuit Board ◽  
Center Frequency ◽  
Spiral Inductor ◽  
Chip Area ◽  
Transmission Zero ◽  
Capacitance Variation ◽  
Zero Frequency

In this paper, a bandpass filter (BPF) was developed utilizing GaAs-based integrated passive device technology which comprises an asymmetrical spiral inductor and an interleaved array capacitor, possessing two tuning modes: coarse-tuning and fine-tuning. By altering the number of layers and radius of the GaAs substrate metal spheres, capacitance variation from 0.071 to 0.106 pF for coarse-tuning, and of 0.0015 pF for fine-tuning, can be achieved. Five air bridges were employed in the asymmetrical spiral inductor to save space, contributing to a compact chip area of 0.015λ0 × 0.018λ0. The BPF chip was installed on the printed circuit board artwork with Au bonding wire and attached to a die sink. Measured results demonstrate an insertion loss of 0.38 dB and a return loss of 21.5 dB at the center frequency of 2.147 GHz. Furthermore, under coarse-tuning mode, variation in the center frequency from 1.956 to 2.147 GHz and transmission zero frequency from 4.721 to 5.225 GHz can be achieved. Under fine-tuning mode, the minimum tuning value and the average tuning value of the proposed BPF can be accurate to 1.0 MHz and 4.7 MHz for the center frequency and 1.0 MHz and 12.8 MHz for the transmission zero frequency, respectively.

scholarly journals A New Ultracompact Narrow Bandpass Microstrip Filter Using Double-Negative Quasiplanar Cells

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Mohammad Reza Khawary ◽  
Vahid Nayyeri ◽  
Seyed Mohammad Hashemi ◽  
Mohammad Soleimani
Keyword(s):  
Printed Circuit Board ◽  
High Selectivity ◽  
Bandpass Filter ◽  
Circuit Board ◽  
Center Frequency ◽  
Double Negative ◽  
Fractional Bandwidth ◽  
Printed Circuit ◽  
Full Wave ◽  
Good Agreement

This paper presents a novel ultracompact narrow bandpass filter with high selectivity. The proposed filter is composed of cascading two basic cells. Each cell is basically a microstrip line loaded with a quasiplanar resonator and series gaps which can be fabricated using a standard multilayer printed circuit board technology. The structure is analyzed through an equivalent circuit and full-wave simulations. The simulation results are compared with experimental measurements demonstrating a good agreement between them. The measurement indicates that the realized bandpass filter at the center frequency of 1 GHz has a fractional bandwidth of 2.2%. Most importantly, in comparison with other similar recent works, it is shown that the proposed filter has the smallest size.

scholarly journals A Highly Selective and Compact Bandpass Filter with a Circular Spiral Inductor and an Embedded Capacitor Structure Using an Integrated Passive Device Technology on a GaAs Substrate

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 73 ◽  
Author(s):  
Chun-He Quan ◽  
Zhi-Ji Wang ◽  
Jong-Chul Lee ◽  
Eun-Seong Kim ◽  
Nam-Young Kim
Keyword(s):  
Gaas Substrate ◽  
High Performance ◽  
High Selectivity ◽  
Bandpass Filter ◽  
Signal Propagation ◽  
Center Frequency ◽  
Spiral Inductor ◽  
Passive Device ◽  
Compact Size ◽  
Embedded Capacitor

As one of the most commonly used devices in microwave systems, bandpass filters (BPFs) directly affect the performance of these systems. Among the processes for manufacturing filters, integrated passive device (IPD) technology provides high practicality and accuracy. Thus, to comply with latest development trends, a resonator-based bandpass filter with a high selectivity and a compact size, fabricated on a gallium arsenide (GaAs) substrate is developed. An embedded capacitor is connected between the ends of two divisions in a circular spiral inductor, which is intertwined to reduce its size to 0.024 λg × 0.013 λg with minimal loss, and along with the capacitor, it generates a center frequency of 1.35 GHz. The strong coupling between the two ports of the filter results in high selectivity, to reduce noise interference. The insertion loss and return loss are 0.26 dB and 25.6 dB, respectively, thus facilitating accurate signal propagation. The filter was tested to verify its high performance in several aspects, and measurement results showed good agreement with the simulation results.

scholarly journals Toward a fully integrated automotive radar system-on-chip in 22 nm FD-SOI CMOS

2021 ◽  
pp. 1-9
Author(s):  
Philipp Ritter
Keyword(s):  
Millimeter Wave ◽  
Flip Chip ◽  
Printed Circuit Board ◽  
Digital Signal ◽  
Cmos Technology ◽  
Radar System ◽  
Circuit Board ◽  
Processing Unit ◽  
Automotive Radar ◽  
On Chip

Abstract Next-generation automotive radar sensors are increasingly becoming sensitive to cost and size, which will leverage monolithically integrated radar system-on-Chips (SoC). This article discusses the challenges and the opportunities of the integration of the millimeter-wave frontend along with the digital backend. A 76–81 GHz radar SoC is presented as an evaluation vehicle for an automotive, fully depleted silicon-over-insulator 22 nm CMOS technology. It features a digitally controlled oscillator, 2-millimeter-wave transmit channels and receive channels, an analog base-band with analog-to-digital conversion as well as a digital signal processing unit with on-chip memory. The radar SoC evaluation chip is packaged and flip-chip mounted to a high frequency printed circuit board for functional demonstration and performance evaluation.

scholarly journals Design and Implementation of SOC-Based Noncontact-Type Level Sensing for Conductive and Nonconductive Liquids

2021 ◽  
Vol 2021 ◽  
pp. 1-12
Author(s):  
J. L. Mazher Iqbal ◽  
Munagapati Siva Kishore ◽  
Arulkumaran Ganeshan ◽  
G. Narayan
Keyword(s):  
Printed Circuit Board ◽  
System On Chip ◽  
Circuit Board ◽  
Sensor Technology ◽  
Electromechanical Systems ◽  
Printed Circuit ◽  
Design And Implementation ◽  
Hardware System ◽  
On Chip

In contrast to the existing electromechanical systems, the noncontact-type capacitive measurement allows for a chemically and mechanically isolated, continuous, and inherently wear-free measurement. Integration of the sensor directly into the container’s wall offers considerable savings potential because of miniaturization and installation efforts. This paper presents the implementation of noncontact (NC)-type level sensing techniques utilizing the Programmable System on Chip (PSoC). The hardware system developed based on the PSoC microcontroller is interfaced with capacitive-based printed circuit board (PCB) strip. The designer has the choice of placing the sensors directly on the container or close to it. This sensor technology can measure both the conductive and nonconductive liquids with equal accuracy.

Optimized High Power GaN Transistors

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000195-000199
Author(s):  
J. Roberts ◽  
A. Mizan ◽  
L. Yushyna
Keyword(s):  
High Speed ◽  
Figure Of Merit ◽  
Printed Circuit Board ◽  
Heat Removal ◽  
Vital Role ◽  
Circuit Board ◽  
Die Structure ◽  
Power Switches ◽  
On Chip ◽  
Very High

GaN transistors intended for use at 600–900 V and that are capable of providing of 30–100 A are being introduced this year. These devices have a substantially better switching Figure-of-Merit (FOM) than silicon power switches. Rapid market acceptance is expected leading to compound annual growth rates of 85 %. However these devices present new packaging challenges. Their high speed combined with the very high current being switched demands that very low inductance packaging must be combined with highly controlled drive circuitry. While convention, and the usually vertical power device die structure, has largely determined power transistor package formats in the past, the lateral nature of the today GaN devices requires the use of new package types. The new packages have to operate at high temperatures while providing effective heat removal, low inductance, and low series resistance. Because GaN devices are lateral they require the package metal tracks to be integrated within the on-chip tracks to carry the current away from the thin on-chip metal tracks. The new GaN devices are available in two formats: one for use in embedded modular assemblies and the other for use mounted upon conventional circuit board systems. The package intended for discrete printed circuit board (PCB) assemblies has a top side cooling option that simplifies the thermal interface to the heat sink. The paper describes the die layout including the added copper tracks. The corresponding package elements that interface directly with the surface of the die play a vital role in terms of the current handling. They also provide the interface to the external busbars that allow the package to be mounted within, or on PCB. The assembly has been subject to extensive thermal analysis and the performance of a 30 A, 650 V transistor is described.

Practical Implementation of Frequency Monitoring for Widely Tunable Bandpass Filters

2010 ◽  
Vol 2010 (1) ◽  
pp. 000874-000880
Author(s):  
Hjalti H. Sigmarsson ◽  
Evan Binkerd ◽  
Jeff Maas ◽  
Juseop Lee ◽  
Dimitrios Peroulis ◽  
...  
Keyword(s):  
Printed Circuit Board ◽  
Practical Method ◽  
Tunable Filter ◽  
In Situ Monitoring ◽  
Circuit Board ◽  
Center Frequency ◽  
Practical Implementation ◽  
Differential Mode ◽  
Frequency Monitoring ◽  
Continuous Feedback

In the present work, a practical method to integrate sensing mechanisms into widely tunable evanescent-mode cavity resonators for tracking the center frequency is introduced. This mechanism allows for in-situ monitoring and outputs a signal that can be used to generate a closed loop feedback that can be used to lock in the center frequency of the resonator. The major benefit of this mechanism is that the performance of a resonator is not sacrificed since the higher order differential mode used for monitoring is orthogonal to the fundamental mode of the resonator. The resonator is created inside a standard printed circuit board using 3-dimensional laser patterning to allow the existence of the differential mode. An example resonator is fabricated to demonstrate the concept and tuned from 3.62 to 6.85 GHz. The differential mode was monitored to be at a frequency 1.8 times higher than the common mode. The unloaded quality factor of the resonator is extracted from measurements to verify that the sensing mechanism does not induce any additional losses. Continuous feedback is a crucial step towards a robust fielded widely tunable filter.

Compact dual mode X-band SIW bandpass filter with wide spurious suppression using split square ring slot resonator

Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sandhya Ramalingam ◽  
Umma Habiba Hyder Ali ◽  
Sharmeela Chenniappan
Keyword(s):  
Bandpass Filter ◽  
Equivalent Circuit Model ◽  
Circuit Board ◽  
Center Frequency ◽  
Design System ◽  
Dual Mode ◽  
Content Type ◽  
X Band ◽  
Compact Size ◽  
Spurious Suppression

Purpose This paper aims to design a dual mode X-band substrate integrated waveguide (SIW) bandpass filter in the conventional SIW structure. A pair of back-to-back square and split ring resonator is introduced in the single-layer SIW bandpass filter. The various coupling configurations of SIW bandpass filter using split square ring slot resonator is designed to obtain dual resonant mode in the passband. It is shown that the measured results agree with the simulated results to meet compact size, lower the transmission coefficient, better reflection coefficient, sharp sideband rejection and minimal group delay. Design/methodology/approach A spurious suppression of wideband response is suppressed using an open stub in the transmission line. The width and length of the stub are tuned to suppress the wideband spurs in the stopband. The measured 3 dB bandwidth is from 8.76 to 14.24 GHz with a fractional bandwidth of 48.04% at a center frequency of 11.63 GHz, 12.59 GHz. The structure is analyzed using the equivalent circuit model, and the simulated analysis is based on an advanced design system software. Findings This paper discusses the characteristics of resonator below the waveguide cut-off frequency with their working principles and applications. Considering the difficulties in combining the resonators with a metallic waveguide, a new guided wave structure – the SIW is designed, which is synthesized on a planar substrate with linear periodic arrays of metallized via based on the printed circuit board. Originality/value This study has investigated the wave propagation problem of the SIW loaded by square ring slot-loaded resonator. The electric dipole nature of the resonator has been used to achieve a forward passband in a waveguide environment. The proposed filters have numerous advantages such as high-quality factor, low insertion loss, easy to integrate with the other planar circuits and, most importantly, compact size.

scholarly journals Ultra-compact capacitively loaded evanescent half-mode SIW filters for LTE applications

2014 ◽  
Vol 6 (5) ◽  
pp. 487-490 ◽  
Author(s):  
Tinus Stander ◽  
Saurabh Sinha
Keyword(s):  
Printed Circuit Board ◽  
Circuit Board ◽  
Center Frequency ◽  
Fractional Bandwidth ◽  
Third Order ◽  
Printed Circuit ◽  
Term Evolution ◽  
Waveguide Filter ◽  
Capacitive Loading

This paper presents a novel miniaturized substrate integrated waveguide filter by combining both half-mode resonators and capacitive loading on a conventional two-layer printed circuit board (PCB) process. The resulting synthesis is successfully demonstrated in an long-term evolution application by means of a third-order filter of <225 mm2in size while featuring 2.3 dB insertion loss over a 5.5% fractional bandwidth at 3.7 GHz. Good first-iteration agreement between simulated and measured results, both in center frequency and bandwidth, are achieved.

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