scholarly journals Metamorphic Integration of GaInAsSb Material on GaAs Substrates for Light Emitting Device Applications

Materials ◽  
2019 ◽  
Vol 12 (11) ◽  
pp. 1743
Author(s):  
Qi Lu ◽  
Andrew Marshall ◽  
Anthony Krier
Keyword(s):  
Quantum Wells ◽  
Buffer Layer ◽  
Lattice Mismatch ◽  
Cost Effective ◽  
Threading Dislocations ◽  
Cross Sectional ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Gaas Substrates ◽  
Device Applications

The GaInAsSb material has been conventionally grown on lattice-matched GaSb substrates. In this work, we transplanted this material onto the GaAs substrates in molecular beam epitaxy (MBE). The threading dislocations (TDs) originating from the large lattice mismatch were efficiently suppressed by a novel metamorphic buffer layer design, which included the interfacial misfit (IMF) arrays at the GaSb/GaAs interface and strained GaInSb/GaSb multi-quantum wells (MQWs) acting as dislocation filtering layers (DFLs). Cross-sectional transmission electron microscopy (TEM) images revealed that a large part of the dislocations was bonded on the GaAs/GaSb interface due to the IMF arrays, and the four repetitions of the DFL regions can block most of the remaining threading dislocations. Etch pit density (EPD) measurements indicated that the dislocation density in the GaInAsSb material on top of the buffer layer was reduced to the order of 106 /cm2, which was among the lowest for this compound material grown on GaAs. The light emitting diodes (LEDs) based on the GaInAsSb P-N structures on GaAs exhibited strong electro-luminescence (EL) in the 2.0–2.5 µm range. The successful metamorphic growth of GaInAsSb on GaAs with low dislocation densities paved the way for the integration of various GaInAsSb based light emitting devices on the more cost-effective GaAs platform.

Characterization of Chemically Vapor Deposited GaN on Sic on a Simox Substrate

1997 ◽  
Vol 3 (S2) ◽  
pp. 487-488
Author(s):  
W.L. Zhou ◽  
P. Pirouz
Keyword(s):  
Lattice Mismatch ◽  
Defect Density ◽  
Silicon Layer ◽  
Large Defect ◽  
Cross Sectional ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Transmission Electron ◽  
Potential Applications ◽  
Gan Film

GaN has been intensively studied because of its potential applications for the fabrication of blue- or ultraviolet-light emitting devices. Sapphire (α-Al2O3) is generally used as the substrate for growth of GaN film. However, the large lattice mismatch between GaN and Al2O3is a possible cause of the large defect density in the GaN films. Consequently, alternative substrates are being studied with the aim of growing films of lesser defect densities and improved opto-electronic properties. In this paper, we report a transmission electron microscopy (TEM) study of a GaN film grown on cubic SiC which has been obtained by carbonization of the top silicon layer of a SIMOX substrate, i.e. the system GaN/SiC/Si/SiO2/Si.Cross-sectional TEM specimens were prepared by the conventional sandwich technique with the foil surface normal to the Si[l10] direction. The composite sample was ground and dimpled to a thickness of ∼ 10μm, and subsequently ion thinned to electron transparency.

Metalorganic Molecular Beam Epitaxy of GaAsP for Visible Light-Emitting Devices on Si

1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Visible Light ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Infrared Light ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Good Crystallinity ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Pre Treatment

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.

scholarly journals Dimension- and position-controlled growth of GaN microstructure arrays on graphene films for flexible device applications

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Dongha Yoo ◽  
Keundong Lee ◽  
Youngbin Tchoe ◽  
Puspendu Guha ◽  
Asad Ali ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Controlled Growth ◽  
Light Emitting ◽  
Graphene Films ◽  
Device Applications ◽  
Electron Microscopes ◽  
Cu Foil ◽  
Foil Substrate

AbstractThis paper describes the fabrication process and characteristics of dimension- and position-controlled gallium nitride (GaN) microstructure arrays grown on graphene films and their quantum structures for use in flexible light-emitting device applications. The characteristics of dimension- and position-controlled growth, which is crucial to fabricate high-performance electronic and optoelectronic devices, were investigated using scanning and transmission electron microscopes and power-dependent photoluminescence spectroscopy measurements. Among the GaN microstructures, GaN microrods exhibited excellent photoluminescence characteristics including room-temperature stimulated emission, which is especially useful for optoelectronic device applications. As one of the device applications of the position-controlled GaN microrod arrays, we fabricated light-emitting diodes (LEDs) by heteroepitaxially growing InxGa1−xN/GaN multiple quantum wells (MQWs) and a p-type GaN layer on the surfaces of GaN microrods and by depositing Ti/Au and Ni/Au metal layers to prepare n-type and p-type ohmic contacts, respectively. Furthermore, the GaN microrod LED arrays were transferred onto Cu foil by using the chemical lift-off method. Even after being transferred onto the flexible Cu foil substrate, the microrod LEDs exhibited strong emission of visible blue light. The proposed method to enable the dimension- and position-controlled growth of GaN microstructures on graphene films can likely be used to fabricate other high-quality flexible inorganic semiconductor devices such as micro-LED displays with an ultrahigh resolution.

Efficiency enhancement in quantum dot light-emitting devices employing trapping-type electron buffer layer

2019 ◽  
Vol 66 ◽  
pp. 211-215 ◽  
Author(s):  
Haiwei Feng ◽  
Ziwei Yu ◽  
Jiaxin Zhang ◽  
Teng Pan ◽  
Shihao Liu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Buffer Layer ◽  
Efficiency Enhancement ◽  
Light Emitting ◽  
Light Emitting Devices

Ordered Structures of Zn1−xFexSe Epilayers Grown on InP and GaAs Substrates

1993 ◽  
Vol 312 ◽  
Author(s):  
K. Park ◽  
H.- Y. Wei ◽  
L. Salamanca-Riba ◽  
B. T. Jonker
Keyword(s):  
Lattice Mismatch ◽  
Misfit Strain ◽  
Growth Direction ◽  
Ordered Structure ◽  
Cross Sectional ◽  
Ordered Structures ◽  
Gaas Substrates ◽  
Lattice Images ◽  
Diffraction Patterns ◽  
Inp Substrates

AbstractWe present evidence for two types of ordered structures, CuAu-I and CuPt, in Zn1−xFexSe (x≈ 0.4) epilayers grown by molecular beam epitaxy. These ordered structures are observed in both electron diffraction patterns and cross-sectional high-resolution lattice images. The CuAu-I ordered structure occurs in Zn1−xFexSe epilayers grown on (001) InP substrates, while the CuPt-type occurs in epilayers grown on (001) GaAs substrates. The ordered structure of Zn1−xFexSe grown on InP substrates consists of alternating ZnSe and FeSe layers along the [001] growth direction and the [110] direction. In contrast, the ordered structure of Zn1−xFexSe grown on GaAs substrates consists of alternating ZnSe and FeSe layers along the < 111 > directions. We have also investigated the role of the misfit strain associated with the lattice mismatch between the epilayers and the substrates on the type of ordered structure.

Defect Characterization of InAs Films Grown by Two-Step MOCVD on (100) InP Substrates

1992 ◽  
Vol 280 ◽  
Author(s):  
A. K. Ballal ◽  
L. Salamanca-Riba ◽  
D. L. Partin
Keyword(s):  
Electron Microscopy ◽  
Lattice Mismatch ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Threading Dislocations ◽  
Misfit Dislocations ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
Plan View ◽  
Inp Substrates

ABSTRACTIn this paper we investigate the defect morphology and misfit strain in InAs films grown on (100) InP substrates using two-step metal organic chemical vapor deposition (MOCVD). High quality InAs films were obtained despite the 3.2% lattice-mismatch between the InAs film and the InP substrate. Cross-sectional and plan-view transmission electron microscopy has been used to characterize the ∼3μm thick InAs films. Almost all the lattice mismatch is accomodated by an orthogonal array of pure edge Lomer dislocations which are favored over the 60° type since they are more efficient in relieving misfit strain. In addition to misfit dislocations, threading dislocations were observed propagating through the film. Most of the threading dislocations were 60° type dislocations along the < 211 > and < 110 > directions on inclined {111} planes. The threading dislocations originate from island coalescence during film growth. High resolution electron microscopy shows the epitaxial relationship between the film and the substrate and reveals an abrupt and sharp interface with periodic dislocation cores.

TEM Investigations of Cross-Sectional Prepared Organic Light Emitting Devices

2003 ◽  
Vol 9 (S03) ◽  
pp. 266-267 ◽  
Author(s):  
Bernhard Schaffer ◽  
Christoph Mitterbauer ◽  
Alexander Pogantsch ◽  
Stephan Rentenberger ◽  
Egbert Zojer ◽  
...  
Keyword(s):  
Cross Sectional ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Organic Light Emitting Devices

Proposal to Use GaAs(114) Substrates for Improvement of the Optical Transition Probability in Nitride Semiconductor Quantum Wells

2003 ◽  
Vol 798 ◽  
Author(s):  
Mitsuru Funato ◽  
Yoshinobu Kawaguchi ◽  
Shigeo Fujita
Keyword(s):  
Quantum Wells ◽  
Optical Transition ◽  
Transition Probability ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Semiconductor Quantum Wells ◽  
Emission Lifetime ◽  
Quantum Disks ◽  
The Difference ◽  
Optical Transition Probability

ABSTRACTThe dependence of the spontaneous emission lifetime of excitons in InGaN/GaN quantum disks (QDs) on the crystalline orientation is calculated. For 1-nm-thick QDs, it is found that the lifetime in the conventional c-oriented QDs is ten times as long as that in QDs tilted by 30° and 90°, and that the difference is pronounced by increasing the QDs thickness. This is totally due to the presence of the electric field in strained InGaN. Taking into account our preceding study, in which it was revealed that GaN on GaAs(114) was titled by 30°, we propose the use of GaAs(114) as a substrate for nitride light emitting devices to improve the optical transition probability.

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