scholarly journals Generalized Stacking Fault Energy of {10-11} Slip System in Mg-Based Binary Alloys: A First Principles Study

Materials ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1548 ◽  
Author(s):  
Yuchen Dou ◽  
Hong Luo ◽  
Jing Zhang ◽  
Xiaohua Tang
Keyword(s):  
Slip System ◽  
First Principles ◽  
Solute Atom ◽  
Binary Alloys ◽  
Stacking Fault ◽  
Magnesium Matrix ◽  
Wide Range ◽  
Generalized Stacking Fault ◽  
Stacking Fault Energies ◽  
Generalized Stacking Fault Energy

In this work, the generalized stacking fault energies (GSFEs) of {10-11}<11-23> slip system in a wide range of Mg-X (X = Ag, Al, Bi, Ca, Dy, Er, Gd, Ho, Li, Lu, Mn, Nd, Pb, Sc, Sm, Sn, Y, Yb, Zn and Zr) binary alloys has been studied. The doping concentration in the doping plane and the Mg-X system is 12.5 at.% and 1.79 at.%, respectively. Two slip modes (slip mode I and II) were considered. For pure magnesium, these two slip modes are equivalent to each other. However, substituting a solute atom into the magnesium matrix will cause different effects on these two slip modes. Based on the calculated GSFEs, two design maps were constructed to predict solute effects on the behavior of the {10-11}<11-23> dislocations. The design maps suggest that the addition of Ag, Al, Ca, Dy, Er, Gd, Ho, Lu, Nd, Sm, Y, Yb and Zn could facilitate the {10-11}<11-23> dislocations.

scholarly journals Atomic structure, electronic properties and generalized stacking fault energy of diamond/c-BN multilayer

RSC Advances ◽  
2017 ◽  
Vol 7 (47) ◽  
pp. 29599-29605 ◽  
Author(s):  
Zijun Lin ◽  
Xianghe Peng ◽  
Cheng Huang ◽  
Tao Fu ◽  
Zhongchang Wang
Keyword(s):  
Electronic Properties ◽  
Atomic Structure ◽  
First Principles ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
First Principles Calculations ◽  
Atomic Structures ◽  
Generalized Stacking Fault ◽  
Stacking Fault Energies ◽  
Generalized Stacking Fault Energy

The atomic structures, electronic properties and generalized stacking fault energies of the diamond/c-BN multilayer are investigated systematically with first-principles calculations.

scholarly journals Temperature Effects on the Elastic Constants, Stacking Fault Energy and Twinnability of Ni3Si and Ni3Ge: A First-Principles Study

Crystals ◽  
2018 ◽  
Vol 8 (9) ◽  
pp. 364 ◽  
Author(s):  
Lili Liu ◽  
Liwan Chen ◽  
Youchang Jiang ◽  
Chenglin He ◽  
Gang Xu ◽  
...  
Keyword(s):  
Elastic Constants ◽  
First Principles ◽  
Antiphase Boundary ◽  
Stacking Fault ◽  
First Principles Calculations ◽  
Planar Fault ◽  
Different Temperatures ◽  
Generalized Stacking Fault ◽  
Increasing Temperature ◽  
Stacking Fault Energies

The volume versus temperature relations for Ni 3 Si and Ni 3 Ge are obtained by using the first principles calculations combined with the quasiharmonic approach. Based on the equilibrium volumes at temperature T, the temperature dependence of the elastic constants, generalized stacking fault energies and generalized planar fault energies of Ni 3 Si and Ni 3 Ge are investigated by first principles calculations. The elastic constants, antiphase boundary energies, complex stacking fault energies, superlattice intrinsic stacking fault energies and twinning energy decrease with increasing temperature. The twinnability of Ni 3 Si and Ni 3 Ge are examined using the twinnability criteria. It is found that their twinnability decrease with increasing temperature. Furthermore, Ni 3 Si has better twinnability than Ni 3 Ge at different temperatures.

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