scholarly journals Old Molecule, New Chemistry: Exploring Silicon Phthalocyanines as Emerging N-Type Materials in Organic Electronics

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1334 ◽  
Author(s):  
Nathan J. Yutronkie ◽  
Trevor M. Grant ◽  
Owen A. Melville ◽  
Benoît H. Lessard ◽  
Jaclyn L. Brusso

Efficient synthesis of silicon phthalocyanines (SiPc) eliminating the strenuous reaction conditions and hazardous reagents required by classical methods is described. Implementation into organic thin-film transistors (OTFTs) affords average electron field-effect mobility of 3.1 × 10−3 cm2 V−1 s−1 and threshold voltage of 25.6 V for all synthetic routes. These results demonstrate that our novel chemistry can lead to high performing SiPc-based n-type OTFTs.

Author(s):  
Benjamin King ◽  
Andrew J. Daszczynski ◽  
Nicole A. Rice ◽  
Alexander J. Peltekoff ◽  
Nathan J. Yutronkie ◽  
...  

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  

2018 ◽  
Vol 6 (20) ◽  
pp. 5482-5488 ◽  
Author(s):  
Owen A. Melville ◽  
Trevor M. Grant ◽  
Benoît H. Lessard

The first example of Silicon phthalocyanines (SiPcs) in organic thin-film transistors (OTFTs). This study outlines the need for careful selection of processing conditions for optimized performance.


1999 ◽  
Vol 558 ◽  
Author(s):  
C.D. Sheraw ◽  
D.J. Gundlach ◽  
T.N. Jackson

ABSTRACTWe have investigated the polymeric insulators benzocyclobutene (BCB), parylene C and polyimide for use as gate dielectrics in pentacene organic thin film transistors (TFTs). Atomic force microscopy (AFM) was used to examine the surface roughness of the polymeric dielectrics and the morphology of pentacene films deposited onto them. X-ray diffraction was used to examine the molecular ordering of pentacene films deposited onto the polymeric dielectrics. We find a correlation between the surface roughness of the gate dielectric and the grain size in deposited pentacene films, with smooth surfaces yielding larger, more dendritic grains. Despite significant changes in film morphology, pentacene TFTs using BCB, parylene C, or polyimide as the gate dielectric have performance comparable to devices using SiO2 as the gate dielectric. These results suggest that there is not a strong correlation between pentacene film grain size and field-effect mobility for these devices. Pentacene TFTs using BCB as the gate dielectric had field-effect mobility as high as 0.7 cm2/V-s, on/off ratio > 107, subthreshold slope less than 2 V/decade, and negative threshold voltage, making them an attractive candidate for use in organic-based large-area electronic applications on flexible substrates.


Author(s):  
Sophie Griggs ◽  
Adam Marks ◽  
Helen Bristow ◽  
Iain McCulloch

This review summarises high performing n-type polymers for use in organic thin film transistors, organic electrochemical transistors and organic thermoelectric devices with a focus on stability issues arising in these electron transporting materials.


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