scholarly journals The Investigation of High-Temperature SAW Oxygen Sensor Based on ZnO Films

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1235 ◽  
Author(s):  
Lin Shu ◽  
Xuemin Wang ◽  
Dawei Yan ◽  
Long Fan ◽  
Weidong Wu
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Gas Sensor ◽  
Oxygen Sensor ◽  
Experimental Period ◽  
Zno Films ◽  
Zno Film ◽  
Axis Orientation ◽  
Potential Applications ◽  
Oxygen Gas

In this paper, a wireless oxygen sensor based on a surface acoustic wave (SAW) was reported. For high-temperature applications, novel Al2O3/ZnO/Pt multilayered conductive film was deposited on langasite substrate as the electrodes, and ZnO film obtained by the pulse laser deposition (PLD) method was used as the sensitive film. The measurements of X-ray diffraction (XRD) and a scanning electron microscope (SEM) showed that the c-axis orientation of the ZnO grains and the surface morphology of the films were regulated by the deposition temperature. Meanwhile, the gas response of the sensor was strongly dependent on the surface morphology of the ZnO film. The experimental results showed that the oxygen gas sensor could operate at a high-temperature environment up to 850 °C with good stability for a long period. The max frequency shift of the sensors reaches 310 kHz, when exposed to 40% O2 gas at 850 °C. The calculated standard error of the sensors in a high-temperature measurement process is within 3%. Additionally, no significant signal degradation could be observed in the long-term experimental period. The prepared SAW oxygen gas sensor has potential applications in high-temperature sensing systems.

Zinc Oxide Thin Films Grown on Nanostructured Al Thin Layer/Glass Substrate by RF Magnetron Sputtering

2011 ◽  
Vol 239-242 ◽  
pp. 777-780
Author(s):  
Ting Zhi Liu ◽  
Shu Wang Duo ◽  
C Y Hu ◽  
C B Li
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Thin Layer ◽  
Glass Substrate ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Zno Film ◽  
Substrate Roughness ◽  
Axis Orientation

ZnO films were deposited on nanostructured Al (n-Al) /glass substrate by RF magnetron sputtering. The results shows that the relation (I (002) /I (100) ≈ I annealed (002)/I annealed (100) ≈1.1) shows the rough n-Al surface is suitable for the growth of a-axis orientation. Meanwhile, the influences of substrate roughness, crystallinity and (101) plane of ZnO film deposited on n-Al layer have been discussed. XPS implies more oxygen atoms are bound to Aluminum atoms, which result in the increase of high metallic Zn in the film.

Properties of Nano-ZnO Films Deposited by RF Magnetron Sputtering for SAW Biosensors

2011 ◽  
Vol 418-420 ◽  
pp. 293-296
Author(s):  
Qiu Yun Fu ◽  
Peng Cheng Yi ◽  
Dong Xiang Zhou ◽  
Wei Luo ◽  
Jian Feng Deng
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Nano Zno ◽  
Axis Orientation ◽  
X Ray

Abstract. In this article, nano-ZnO films were deposited on SiO2/Si (100) substrates by RF (radio frequency) magnetron sputtering using high purity (99.99%) ZnO target. The effects of deposition time and annealing temperature have been investigated. XRD (X-ray diffraction) and FSEM (Field Emission Scanning Electron Microscopy) were employed to characterize the quality of the films. The results show that the ZnO film with thickness of 600nm annealed at 900°C has higher quality of both C-axis orientation and crystallization. And for the Zone film with thickness of 300nm annealed at 850°C, the quality of both C-axis orientation and crystallization is higher than that annealed at 900°C and 950°C.

Low operating temperature of oxygen gas sensor based on undoped and Cr-doped ZnO films

2010 ◽  
Vol 256 (11) ◽  
pp. 3468-3471 ◽  
Author(s):  
N. Al-Hardan ◽  
M.J. Abdullah ◽  
A. Abdul Aziz ◽  
H. Ahmad
Keyword(s):  
Gas Sensor ◽  
Operating Temperature ◽  
Zno Films ◽  
Oxygen Gas ◽  
Doped Zno

scholarly journals A Rugged Oxygen Gas Sensor with Solid Reference for High Temperature Applications

2001 ◽  
Vol 148 (2) ◽  
pp. G91 ◽  
Author(s):  
A. K. M. S. Chowdhury ◽  
S. A. Akbar ◽  
S. Kapileshwar ◽  
J. R. Schorr
Keyword(s):  
High Temperature ◽  
Gas Sensor ◽  
Oxygen Gas ◽  
Temperature Applications

scholarly journals Bimodular high temperature planar oxygen gas sensor

2014 ◽  
Vol 2 ◽  
Author(s):  
Xiangcheng Sun ◽  
Yixin Liu ◽  
Haiyong Gao ◽  
Pu-Xian Gao ◽  
Yu Lei
Keyword(s):  
High Temperature ◽  
Gas Sensor ◽  
Oxygen Gas

High temperature tolerant diamond-based microelectronic oxygen gas sensor

1998 ◽  
Vol 49 (1-2) ◽  
pp. 115-120 ◽  
Author(s):  
Y. Gurbuz ◽  
W.P. Kang ◽  
J.L. Davidson ◽  
D.V. Kerns
Keyword(s):  
High Temperature ◽  
Gas Sensor ◽  
Oxygen Gas

Surface Morphology Evolution during LP-MOCVD Growth of ZnO on Sapphire

2005 ◽  
Vol 475-479 ◽  
pp. 1693-1696 ◽  
Author(s):  
Jian Dong Ye ◽  
Shu Lin Gu ◽  
Su Min Zhu ◽  
S.M. Liu ◽  
Feng Qin ◽  
...  
Keyword(s):  
High Temperature ◽  
Surface Morphology ◽  
Growth Time ◽  
Zno Films ◽  
Morphology Evolution ◽  
Island Growth ◽  
X Ray ◽  
Mocvd Growth ◽  
Atomic Force ◽  
Surface Morphology Evolution

The morphology evolution of ZnO films grown on sapphire (0001) by MOCVD have been studied as a function of buffer growth time and temperature by means of atomic-force microscope (AFM), x-ray diffractions (XRD) and optical microscopy. When the buffer growth temperature decreased to 450°C, the surface became smooth greatly, indicating the transition from typical 3D island growth to quasi-2D growth mode. As the buffer growth time exceeds 5min, the micron-sized pit-like features are formed. It is due to the lack of stabilization of adatoms under the “etching” action of ionized O2/Ar during high temperature buffer annealing

Effects of Sapphire Substrate Configurations on MBE Growth of ZnO

1999 ◽  
Vol 587 ◽  
Author(s):  
Keiichiro Sakurai ◽  
Ken Nakahara ◽  
Tetsuhiro Tanabe ◽  
Shizuo Fujita ◽  
Shigeo Fujita
Keyword(s):  
Surface Morphology ◽  
Sapphire Substrate ◽  
Film Growth ◽  
Semiconductor Devices ◽  
Optical Characteristics ◽  
Zno Films ◽  
Zno Film ◽  
Mbe Growth ◽  
Sapphire Substrates ◽  
Sensitive Factor

AbstractMBE growth of ZnO films for optical semiconductor devices was investigated on off-angled c-plane sapphire substrates. Twin crystal RHEED patterns and surface facetting observed with c-plane just-oriented substrates were suppressed by enlarging the offset angles from near-zero to 2.87 degrees. Though no significant changes were seen in optical characteristics, FWHM of XRC narrowed and surface morphology improved with larger offset angles, indicating that the offset angle is also a sensitive factor for ZnO film growth.

Immobilization of ZnO Suspension on Glass Substrate to Remove Filtration During the Removal of Remazol Red R from Aqueous Solution

2016 ◽  
Vol 12 (6) ◽  
pp. 4127-4133
Author(s):  
Nazmul Kayes ◽  
Jalil Miah ◽  
Md. Obaidullah ◽  
Akter Hossain ◽  
Mufazzal Hossain
Keyword(s):  
Aqueous Solution ◽  
Glass Substrate ◽  
Uv Light ◽  
Aqueous Suspension ◽  
Light Irradiation ◽  
Zno Films ◽  
Light Sources ◽  
Zno Film ◽  
Semiconductor Oxides ◽  
Remazol Red

Photodegradation of textile dyes in the presence of an aqueous suspension of semiconductor oxides has been of growing interest. Although this method of destruction of dyes is efficient, the main obstacle of applying this technique in the industry is the time and cost involving separation of oxides from an aqueous suspension. In this research, an attempted was made to develop ZnO films on a glass substrate by simple immobilization method for the adsorption and photodegradation of a typical dye, Remazol Red R (RRR) from aqueous solution. Adsorption and photodegradation of  RRR were performed in the presence of glass supported ZnO film. Photodegradation of the dye was carried out by varying different parameters such as the catalyst dosage, initial concentrations of RRR, and light sources. The percentage of adsorption as well as photodegradation increased with the amount of ZnO, reaches a maximum and then decreased. Maximum degradation has been found under solar light irradiation as compared to UV-light irradiation. Removal efficiency was also found to be influenced by the pre-sonication of ZnO suspension.

scholarly journals Preparation and Properties of Electrospun Phenylethynyl—Terminated Polyimide Nano-Fibrous Membranes with Potential Applications as Solvent-Free and High-Temperature Resistant Adhesives for Harsh Environments

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1525
Author(s):  
Hao-ran Qi ◽  
Deng-xiong Shen ◽  
Yan-jiang Jia ◽  
Yuan-cheng An ◽  
Hao Wu ◽  
...  
Keyword(s):  
Stainless Steel ◽  
High Temperature ◽  
Elevated Temperatures ◽  
Solvent Free ◽  
High Tech ◽  
Molecular Weights ◽  
Lap Shear ◽  
High Adhesion ◽  
Potential Applications ◽  
Fibrous Membranes

High-temperature-resistant polymeric adhesives with high servicing temperatures and high adhesion strengths are highly desired in aerospace, aviation, microelectronic and other high-tech areas. The currently used high-temperature resistant polymeric adhesives, such as polyamic acid (PAA), are usually made from the high contents of solvents in the composition, which might cause adhesion failure due to the undesirable voids caused by the evaporation of the solvents. In the current work, electrospun preimidized polyimide (PI) nano-fibrous membranes (NFMs) were proposed to be used as solvent-free or solvent-less adhesives for stainless steel adhesion. In order to enhance the adhesion reliability of the PI NFMs, thermally crosslinkable phenylethynyl end-cappers were incorporated into the PIs derived from 3,3’,4,4’-oxydiphthalic anhydride (ODPA) and 3,3-bis[4-(4-aminophenoxy)phenyl]phthalide (BAPPT). The derived phenylethynyl-terminated PETI-10K and PETI-20K with the controlled molecular weights of 10,000 g mol−1 and 20,000 g mol−1, respectively, showed good solubility in polar aprotic solvents, such as N-methyl-2-pyrrolidinone (NMP) and N,N-dimethylacetamide (DMAc). The PI NFMs were successfully fabricated by electrospinning with the PETI/DMAc solutions. The ultrafine PETI NFMs showed the average fiber diameters (dav) of 627 nm for PETI-10K 695 nm for PETI-20K, respectively. The PETI NFMs showed good thermal resistance, which is reflected in the glass transition temperatures (Tgs) above 270 °C. The PETI NFMs exhibited excellent thermoplasticity at elevated temperatures. The stainless steel adherends were successfully adhered using the PETI NFMs as the adhesives. The PI NFMs provided good adhesion to the stainless steels with the single lap shear strengths (LSS) higher than 20.0 MPa either at room temperature (25 °C) or at an elevated temperature (200 °C).

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