scholarly journals Synthesis and Photocatalytic Properties of CuO-CuS Core-Shell Nanowires

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1106 ◽  
Author(s):  
Yuan-Tse Kao ◽  
Shu-Meng Yang ◽  
Kuo-Chang Lu

In this study, an efficient method to synthesize CuO-CuS core-shell nanowires by two-step annealing process was reported. CuO nanowires were prepared on copper foil via thermal oxidation in a three-zone horizontal tube furnace. To obtain larger surface area for photocatalytic applications, we varied four processing parameters, finding that growth at 550 °C for 3 h with 16 °C/min of the ramping rate under air condition led to CuO nanowires of appropriate aspect ratio and number density. The second step, sulfurization process, was conducted to synthesize CuO-CuS core-shell nanowires by annealing with sulfur powder at 250 °C for 30 min under lower pressure. High-resolution transmission electron microscopy studies show that a 10 nm thick CuS shell formed and the growth mechanism of the nanowire heterostructure has been proposed. With BET, the surface area was measured to be 135.24 m2·g−1. The photocatalytic properties were evaluated by the degradation of methylene blue (MB) under visible light irradiation. As we compared CuO-CuS core-shell nanowires with CuO nanowires, the 4-hour degradation rate was enhanced from 67% to 89%. This could be attributed to more effective separation of photoinduced electron and hole pairs in the CuO-CuS heterostructure. The results demonstrated CuO-CuS core-shell nanowires as a promising photocatalyst for dye degradation in polluted water.

2003 ◽  
Vol 776 ◽  
Author(s):  
Hung-Min Lin ◽  
Jian Yang ◽  
Yong-Lin Chen ◽  
Yau-Chung Liu ◽  
Kai-Min Yin ◽  
...  

AbstractHigh-quality GaP, GaP@GaN and GaN@GaP nanowires were grown by a convenient vapor deposition technique. The wire-like and two-layers structures of GaP@GaN and GaN@GaP core-shell nanowires were clearly resolved using X-ray powder diffraction and high-resolution transmission electron microscopy (HRTEM) and their growth directions were identified. Photoluminescence intensity of GaP@GaN nanowires increased as temperature increased. The result was interpreted by the piezoelectric effect induced from lattice mismatch between two semiconductor layers. An unexpected peak at 386 cm-1 was found in the Raman spectra of GaN@GaP and assigned to a surface phonon mode due to the interface. Detailed synthetic conditions and possible growth mechanisms of those nanowires were proposed.


2011 ◽  
Vol 688 ◽  
pp. 245-249 ◽  
Author(s):  
Zhi Qiang Wei ◽  
Xiao Yun Wang ◽  
Hua Yang

Special carbon encapsulated Fe core-shell nanoparticles with a size range of 15–40 nm were successfully prepared via confined arc plasma method. The composition, morphology, microstructure, specific surface area, particle size of the product by this process were characterized via X-ray diffraction (XRD), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), X-ray energy dispersive spectrometry (XEDS) and BET N2adsorption. The experiment results shown that the carbon encapsulated Fe nanoparticles with clear core-shell structure, the core of the particles is body centered cubic (BCC) structure Fe, and the shell of the particles is disorder carbons. The particle size of the nanocapsules ranges from 15 to 40nm,with an averaged value about 30nm, the particles diameter of the core is about 16nm and the thickness of the shells is about 6-8 nm, and the specific surface area is 24 m2/g.


RSC Advances ◽  
2016 ◽  
Vol 6 (16) ◽  
pp. 12953-12958 ◽  
Author(s):  
Keumyoung Seo ◽  
Taekyung Lim ◽  
Edmund M. Mills ◽  
Sangtae Kim ◽  
Sanghyun Ju

A hierarchical structure of one-dimensional CeO2/SnO2 core–shell nanowires on a three-dimensional porous disk (namely the “nanowire forest”) could maximize the reaction surface area and avoid coarsening during hydrogen generation.


2021 ◽  
Author(s):  
Janusz Sadowski ◽  
Anna Kaleta ◽  
Serhii Kryvyi ◽  
Dorota Janaszko ◽  
Bogusława Kurowska ◽  
...  

Abstract Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(100) substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.


2017 ◽  
Vol 5 (32) ◽  
pp. 16646-16652 ◽  
Author(s):  
Cong Zhang ◽  
Sijia Liu ◽  
Zhongzhang Mao ◽  
Xin Liang ◽  
Biaohua Chen

Ag–Ni nanowires with high electrochemically active surface area and small impedances were synthesized to show enhanced alkaline HER activity.


2016 ◽  
Vol 2016 ◽  
pp. 1-6 ◽  
Author(s):  
Shouhui Chen ◽  
Yaqin Chen ◽  
Rihui Zhou ◽  
Jiafeng Wu ◽  
Yonggui Song ◽  
...  

Porous MnO@C core-shell nanowires were prepared via a simple and facile method. The morphologies, the phase purity, the mass contents, and the BET surface area of the composite were characterized by SEM, XRD, TGA, and N2adsorption test, respectively. When the composite served as an anode for lithium-ion batteries, it showed superior electrochemical performances. The MnO@C composite presented a reversible capacity of 448.1 mAh g−1after 100 cycles at the current rate of 200 mA g−1.


CrystEngComm ◽  
2019 ◽  
Vol 21 (12) ◽  
pp. 1895-1902 ◽  
Author(s):  
Bojia Xu ◽  
Baobao Cao

Hidden epitaxial interfaces were revealed via cross-sectional TEM study of novel quasi-hexagonal SnO2/Zn2SnO4 core–shell nanowires.


2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Taher Ghrib ◽  
Muneera Abdullah Al-Messiere ◽  
Amal Lafi Al-Otaibi

ZnO nanowires of approximately 3 µm length and 200 nm diameter are prepared and implanted vertically on substrate glass which is coated with thin layer of ITO which is too covered with bulk ZnO thin layer via electrodeposition process by cyclic voltammetry-chronoamperometry and with a chemical process that is described later; we have synthesized a ZnS nanolayer. ZnO/ZnS core/shell nanowires are formed by ZnO nanowires core surrounded by a very thin layer of porous ZnS shell principally constituted with a crystal which is about 15–20 nm in diameter. In the method, ZnS nanoparticles were prepared by reaction of ZnO nanowires with Na2S in aqueous solution at low temperature and also we have discussed the growth mechanism of ZnO/ZnS nanowires. The morphology, structure, and composition of the obtained nanostructures were obtained by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). For the structure, SEM and XRD measurements indicated that the as-grown ZnO nanowires microscale was of hexagonal wurtzite phase with a high crystalline quality, and TEM shows that the ZnS is uniformly distributed on the surface of the ZnO nanowires.


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