scholarly journals Colossal Permittivity and Low Dielectric Loss of Thermal Oxidation Single-Crystalline Si Wafers

Materials ◽  
2019 ◽  
Vol 12 (7) ◽  
pp. 1102 ◽  
Author(s):  
Yalong Sun ◽  
Di Wu ◽  
Kai Liu ◽  
Fengang Zheng
Keyword(s):  
Dielectric Properties ◽  
Dielectric Loss ◽  
Thermal Oxidation ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
X Ray Diffraction ◽  
Xrd Pattern ◽  
Single Crystalline ◽  
X Ray ◽  
Low Dielectric

In this work, thin SiO2 insulating layers were generated on the top and bottom surfaces of single-crystalline silicon plates (n type) by thermal oxidation to obtain an insulator/semiconductor/insulator (ISI) multilayer structure. X-ray diffraction (XRD) pattern and scanning electron microscope (SEM) pictures implied that all of the synthesized SiO2 layers were amorphous. By controlling the thermal oxidation times, we obtained SiO2 layers with various thicknesses. The dielectric properties of silicon plates with different thicknesses of SiO2 layers (different thermal oxidation times) were measured. The dielectric properties of all of the single-crystalline silicon plates improved greatly after thermal oxidation. The dielectric constant of the silicon plates with SiO2 layers was approximately 104, which was approximately three orders more than that of the intrinsic single-crystalline silicon plate (11.9). Furthermore, both high permittivity and low dielectric loss (0.02) were simultaneously achieved in the single-crystalline silicon plates after thermal oxidation (ISI structure).

scholarly journals Effect of TeO2 addition on the dielectric properties of CaCu3Ti4O12 ceramics derived from the oxalate precursor route

2013 ◽  
Vol 03 (04) ◽  
pp. 1350028 ◽  
Author(s):  
P. Thomas ◽  
K. B. R. Varma
Keyword(s):  
Dielectric Properties ◽  
Dielectric Loss ◽  
Room Temperature ◽  
X Ray Diffraction ◽  
Oxalate Precursor ◽  
X Ray ◽  
Practical Applications ◽  
Low Dielectric ◽  
Precursor Route ◽  
Tan Δ

CaCu 3 Ti 4 O 12 (CCTO) ceramics which has perovskite structure gained considerable attention due to its giant permittivity. But it has high tan δ (0.1 at 1 kHz) at room temperature, which needs to be minimized to the level of practical applications. Hence, TeO 2 which is a good glass former has been deliberately added to CCTO nanoceramic (derived from the oxalate precursor route) to explore the possibility of reducing the dielectric loss while maintaining the high permittivity. The structural, morphological and dielectric properties of the pure CCTO and TeO 2 added ceramics were studied using X-ray diffraction, Scanning Electron Microscope along with Energy Dispersive X-ray Analysis (EDX), spectroscopy and Impedance analyzer. For the 2.0 wt.% TeO 2 added ceramics, there is a remarkable difference in the microstructural features as compared to that of pure CCTO ceramics. This sample exhibited permittivity values as high as 7387 at 10 KHz and low dielectric loss value of 0.037 at 10 kHz, which can be exploited for the high frequency capacitors application.

Time-resolved x-ray diffraction study of laser-induced shock and acoustic waves in single crystalline silicon

2009 ◽  
Vol 106 (4) ◽  
pp. 044914 ◽  
Author(s):  
K.-D. Liss ◽  
T. d’Almeida ◽  
M. Kaiser ◽  
R. Hock ◽  
A. Magerl ◽  
...  
Keyword(s):  
Diffraction Study ◽  
Acoustic Waves ◽  
Crystalline Silicon ◽  
Single Crystalline Silicon ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Single Crystalline ◽  
X Ray

Dielectric Properties and Microstructure of Y-Al-Ga-Si Co-Doped Barium Titanate Ceramics

2014 ◽  
Vol 602-603 ◽  
pp. 700-704
Author(s):  
Min Jia Wang ◽  
Qi Long Zhang ◽  
Xin Hui Zhao ◽  
Hui Yang
Keyword(s):  
Dielectric Properties ◽  
Dielectric Loss ◽  
Barium Titanate ◽  
X Ray Diffraction ◽  
Solid State Method ◽  
Low Dielectric ◽  
Doped Barium Titanate ◽  
Titanate Ceramics ◽  
Functional Components ◽  
Co Doped

Multilayer ceramic capacitors (MLCC) are important functional components of electronic information technology. The development of AC MLCC requires low dielectric loss and high AC breakdown voltage. In this paper, Y-Al-Ga-Si co-doped barium titanate ceramics were prepared by conventional solid state method. Microstructures, surface morphology and dielectric properties were investigated by X-ray diffraction, SEM, and LCR analyzer, respectively. Y3+ entered into the lattice of BaTiO3, replaced A-sites and B-sites, suppressed grain growth effectively, and made crystal structure change from tetragonal to pseudo-cubic, which reduced dielectric loss and lowered the Curie peak. The sintering characteristic and permittivity can be improved by the incorporation of Al and Ga. BaTiO3 -0.06Y2O3 - 0.02Ga2O3 -0.01Al2O3 -0.01SiO2 ceramics sintered at 1380°C achieved good dielectric properties: εr= ~2223, tanδ =~1.1% (at 1kHz), ΔC/C25 <~15.26% (from 55°C to 150°C).

scholarly journals Structure and dielectric properties of (1-x)Bi 0.5 Na 0.5 TiO 3–x BaTiO 3 piezoceramics prepared using hydrothermally synthesized powders

2021 ◽  
Vol 8 (7) ◽  
pp. 202365
Author(s):  
Andrea Nesterović ◽  
Jelena Vukmirović ◽  
Ivan Stijepović ◽  
Marija Milanović ◽  
Branimir Bajac ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Pyrochlore Phase ◽  
Processing Parameters ◽  
X Ray Diffraction ◽  
One Dimensional ◽  
X Ray ◽  
Low Dielectric ◽  
Long Time ◽  
Time Periods

The influence of different processing parameters and various Ba 2+ addition (up to 10 mol%) on the structure and dielectric properties of Bi 0.5 Na 0.5 TiO 3 -BaTiO 3 (BNT-BT) ceramics was investigated. The powders were hydrothermally synthesized in the alkaline environment at 180°C for different time periods. X-ray diffraction confirmed the presence of dominant rhombohedral Bi 0.5 Na 0.5 TiO 3 phase and a small amount of secondary pyrochlore Bi 2 Ti 2 O 7 phase in the pure BNT powders. In addition, one-dimensional Na 2 Ti 2 O 7 structure was also observed in the powder hydrothermally treated for a long time (i.e. 48 h). The amount of secondary pyrochlore phase in the BNT-BT powders increases with the increase of Ba 2+ content. The synthesized powders were pressed into pellets and finally sintered at various temperatures up to 1150°C. High density (more than 90%TD) was obtained in all BNT-BT sintered samples. Optimal sintering parameters were chosen in order to obtain dense ceramics with the optimal phase composition. The temperature dependence of dielectric properties for the BNT-BT ceramics was also studied. Relaxor behaviour of BNT-based ceramics and broad transition peaks are evident in all samples. Dielectric constant up to 400 as well as an acceptable low dielectric loss at temperatures lower than 200°C were obtained in BNT-BT ceramics.

scholarly journals Studying the Effect of Titania Additions on some properties of Porcelain

2018 ◽  
Vol 28 (2) ◽  
pp. 169
Author(s):  
Abbas K. Saadon
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Titanium Oxide ◽  
Loss Tangent ◽  
Dielectric Loss Tangent ◽  
Raw Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Manufacturing Method

The paper presents the production of porcelain for the ceramic by inexpensive natural raw materi-als, the principal raw materials of porcelain composition was selected consisting of 50% kaolin, 25% feldspar, 25% silica, the sample synthesized were characterize by X-ray diffraction (XRD) technique, than study the effect additives at different concentration form titanium oxide (𝑇𝑖𝑂2 )at (2, 5, 10, 15, 20) wt% on some physical and dielectric properties of porcelain. The samples are prepared by the conventional manufacturing method. The physical and dielectric properties of porcelain show that change considerably with the sub-stituent sample. It was found that the increase of the titanium oxide (𝑇𝑖𝑂2 ) additives of all our sample produce increasing in dielectric constant and bulk density, while decreasing with open porosity and dielectric loss tangent.

The Dependence of Dielectric Properties on Composition Variation in Ba0.6Sr0.4(YTa)yTi1-2yO3

2002 ◽  
Vol 720 ◽  
Author(s):  
Daniel Potrepka ◽  
Steven Tidrow ◽  
Arthur Tauber ◽  
Kevin Kirchner ◽  
Matthew Ervin ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Dielectric Constant ◽  
Dielectric Properties ◽  
Low Dielectric Constant ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Dielectric ◽  
Composition Variation ◽  
Device Applications ◽  
Improved Performance

AbstractBa0.6Sr0.4(YTa)yTi1-2yO3 has been shown to have properties which are promising for tunable applications requiring low dielectric constant [1]. Ba0.6Sr0.4(YTa)yTi1-2yO3 with y ≤ 0.10 has been synthesized and well-characterized using x-ray diffraction, EDAX, and Raman Spectroscopy. The dependence of the dielectric properties on concentration, y, of Y and Ta are discussed along with implications for improved performance in device applications.

scholarly journals Recrystallization of Single-Crystalline VO2 Microtube Arrays on V2O5 Substrate

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 66
Author(s):  
Shuxiang Ma ◽  
Chunwang Zhao
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Cooling Rate ◽  
Thermal Oxidation ◽  
Peak Temperature ◽  
X Ray Diffraction ◽  
Resistive Heating ◽  
Single Crystalline ◽  
X Ray ◽  
Scanning Electron

Single-crystalline VO2 microtube arrays on V2O5 substrate were fabricated through a thermal oxidation route based on resistive heating V foil in air. Four sheets of as-fabricated single-crystalline VO2 microtube arrays on V2O5 substrate were then, respectively, heated to approximately 855 °C and 1660 °C to melt V2O5 or VO2. Thereafter, the melted V2O5 or VO2 was cooled rapidly or slowly to recrystallize the liquid V2O5 or VO2. The morphologies and phases of the recrystallization products were characterized by scanning electron microscopy and X-ray diffraction. This study proposes that the peak temperature of heating and the cooling rate are responsible for the recrystallization products of single-crystalline VO2 microtube arrays on V2O5 substrate.

scholarly journals Synthesis And Characterization of Cobalt-Zinc Spinel Ferrites For High Frequency Applications

2021 ◽  
Author(s):  
Salma Aman ◽  
Tahani I. Al-Muhimeed ◽  
Zaki Ismail Zaki ◽  
Zeinhom M. El-Bahy ◽  
Abeer A. AlObaid ◽  
...  
Keyword(s):  
Dielectric Loss ◽  
High Frequency ◽  
Sol Gel ◽  
Secondary Phase ◽  
Spinel Ferrites ◽  
Dc Resistivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Dielectric

Abstract Spinel ferrites are attractive for high frequency applications due to their larger direct current (dc) resistivity and low dielectric loss. In the present work, Co0.6Zn0.4HoxFe2-xO4 (x = 0.00 and 0.1) spinel ferrites were prepared by sol-gel method. The X-ray diffraction pattern showed that both samples had cubic spinel structure, while in sample (x = 0.1), the secondary phase (HoFeO3) was also observed. The dc resistivity was increased with the addition of holmium ions. As the temperature increased, the dc resistivity was decreased by proving their semiconducting nature. The dielectric properties were also measured as a function of temperature and frequency. The sample which was composed by the substitution of holmium ions contained low value of dielectric loss. The magnetic properties were also experimentally measured by applying the field up to 2000 oersted. The small area covered by hysteresis loop proved that both samples possessed soft nature of magnetic materials.

Synthesis and Optical Properties of Single-Crystalline Silicon Nitride Nanowires with Controlled Dimensionality

2012 ◽  
Vol 512-515 ◽  
pp. 106-109 ◽  
Author(s):  
Zhi Hao Wang ◽  
Fei Chen ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Particle Size ◽  
Silicon Nitride ◽  
Crystalline Silicon ◽  
Average Particle Size ◽  
Nanocrystalline Silicon ◽  
Average Particle ◽  
Single Crystalline Silicon ◽  
X Ray Diffraction ◽  
Single Crystalline ◽  
Uv Lamp

Single-crystalline silicon nitride nanowires with high purity, controlled dimensionality have been prepared via nitriding the nanocrystalline silicon powders at 1300°C~1400°C. The nanocrystalline silicon powders with average particle size of 20-80nm were obtained by cryomilling with the liquid nitrogen as the medium. Scanning electron microscopy, high resolution transmitted electron microscope, X-ray diffraction and UV-lamp microzone Raman spectrometer were used to characterize the as-synthesized nanowires. The effects of nitridation process (reaction temperature and holding time) and the particle size of nanocrystalline silicon powders on the phase and microstructure of the silicon nitride nanowires were analyzed. The obtained results show that the diameter of the nanowires can be controlled in the range of 40~100nm, and the length of 10~80 μm. The formation of the nanowires can be explained by the vapor-solid growth mechanism. The room temperature photoluminescence spectra show that the silicon nitride nanowires exhibit a broad visible emission band which ranges from 370 nm to 700 nm.

Sign in / Sign up

Export Citation Format

Share Document