scholarly journals Influence of Deposition Temperature on the Phase Evolution of HfNbTiVZr High-Entropy Thin Films

Materials ◽  
2019 ◽  
Vol 12 (4) ◽  
pp. 587 ◽  
Author(s):  
Stefan Fritze ◽  
Christian Koller ◽  
Linus von Fieandt ◽  
Paulius Malinovskis ◽  
Kristina Johansson ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Phase Formation ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Phase Evolution ◽  
Peak Hardness ◽  
High Entropy ◽  
Hardness Increase ◽  
Bulk Alloys

In this study, we show that the phase formation of HfNbTiVZr high-entropy thin films is strongly influenced by the substrate temperature. Films deposited at room temperature exhibit an amorphous microstructure and are 6.5 GPa hard. With increasing substrate temperature (room temperature to 275 °C), a transition from an amorphous to a single-phased body-centred cubic (bcc) solid solution occurs, resulting in a hardness increase to 7.9 GPa. A higher deposition temperature (450 °C) leads to the formation of C14 or C15 Laves phase precipitates in the bcc matrix and a further enhancement of mechanical properties with a peak hardness value of 9.2 GPa. These results also show that thin films follow different phase formation pathways compared to HfNbTiVZr bulk alloys.

AFM Study of Surface Morphology of Aluminum Nitride Thin Films

1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Single Crystal ◽  
Room Temperature ◽  
Ion Beam ◽  
Soda Lime ◽  
Silicon Single Crystal ◽  
Soda Lime Glass ◽  
Average Roughness

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.

Phase evolution during the electrodeposition of Cu–Sn–Zn metal precursor layers and its role on the Cu2S impurity phase formation in Cu2ZnSnS4 thin films

Solar Energy ◽  
2017 ◽  
Vol 155 ◽  
pp. 627-636 ◽  
Author(s):  
Ashish K. Singh ◽  
Aniruddh Shrivastava ◽  
Manoj Neergat ◽  
Kavaipatti R. Balasubramaniam
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Phase Evolution ◽  
Impurity Phase ◽  
Metal Precursor

In2O3 Thin Films Prepared on TiAlN Substrates Using a Triethylindium and Oxygen Mixture

2007 ◽  
Vol 124-126 ◽  
pp. 1597-1600
Author(s):  
Hyoun Woo Kim ◽  
Sun Keun Hwang ◽  
Won Seung Cho ◽  
Tae Gyung Ko ◽  
Seung Yong Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Light Emission ◽  
Xrd Analysis ◽  
Oxygen Mixture ◽  
Photoluminescence Spectra ◽  
Sem Images ◽  
Room Temperature Photoluminescence ◽  
Visible Light Emission

This paper reports the fabrication of indium oxide (In2O3) films using a triethylindium and oxygen mixture. The deposition has been carried out on TiAlN substrates (200-350°C). We have established the correlation between the substrate temperature and the structural properties. The films deposited at 300-350°C were polycrystalline, whereas those deposited at 200°C was close to amorphous. XRD analysis and SEM images indicated that the films grown at 350°C had grained structures with the (222) preferred orientation. The room-temperature photoluminescence spectra of the In2O3 films exhibited a visible light emission.

Highly Conductive and Optically Transparent Polycrystalline Iridium Oxide Thin Films Grown by Reactive Pulsed Laser Deposition

1997 ◽  
Vol 472 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Optical Transmission ◽  
Ambient Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structure Morphology ◽  
Quartz Substrates

ABSTRACTReactive pulsed laser deposition has been used to deposit IrO2 thin films on both SiO2 and fused quartz substrates, by ablating a metal iridium target in oxygen atmosphere. At a KrF laser intensity of about 1.7 × 109 W/cm2, IrO2 films were deposited at substrate deposition temperatures ranging from room-temperature to 700 °C under an optimum oxygen ambient pressure of 200 mTorr. The structure, morphology, electrical resistivity and optical transmission of the deposited films were characterized as a function of their deposition temperature (Td). High quality IrO2 films are obtained in the 400–600 °C deposition temperature range. They are polycrystalline with preferred orientations, depending on the substrate, and show a dense granular morphology. At a Td as low as 400 °C, highly conductive IrO2 films with room-temperature resistivities as low as (42±6) μΩ cm are obtained. Over the 300–600 °C Td range, the IrO2 films were found to exhibit a maximum optical transmission at 450 °C (∼ 45 % at 500 nm for 80 nm-thick films).

Correlation of the Stress-Temperature History with Microstructure in A1-0.5Cu and A1-0.15Pd Thin Films

1994 ◽  
Vol 356 ◽  
Author(s):  
D. D. Knorr ◽  
K.P. Rodbell
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Substrate Temperature ◽  
Grain Growth ◽  
Room Temperature ◽  
Temperature History ◽  
Thermal Expansion Mismatch ◽  
Grain Sizes ◽  
Substrate Temperatures ◽  
Precipitate Structure

AbstractBlanket films (1 μm thick) of both A1-0.5Cu and A1-0.15Pd were deposited at room temperature, 150°C, and 300°C. Stress in the as-deposited wafers increased with substrate temperature, as expected from the thermal expansion mismatch on cooling. All conditions were tiicrmally cycled to 450°C three times while continuously monitoring stress. The shapes of the curves were different for the two alloys because precipitates dissolve and reprecipitate in AlCu, but are present over the entire temperature range in AlPd. Lesser differences were evident comparing the stress-temperature behavior for the various substrate temperatures within a single alloy. The precipitate structure also influences the grain growth during thermal cycling, where substantially larger median grain sizes are found in AlCu compared to AlPd.

The Effect of Substrate Temperature on the Room Temperature Ferromagnetism of Co-Doped ZnO Thin Films

2008 ◽  
Vol 37 (5) ◽  
pp. 831-834 ◽  
Author(s):  
Wang Zhuliang ◽  
Li Xiaoli ◽  
Jiang Fengxian ◽  
Tian Baoqiang ◽  
Lü Baohua ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Co Doped

Reactive Sputter Deposition of Highly Oriented AlN Films at Room Temperature

2002 ◽  
Vol 17 (6) ◽  
pp. 1469-1475 ◽  
Author(s):  
G. F. Iriarte ◽  
F. Engelmark ◽  
I. V. Katardjiev
Keyword(s):  
Substrate Temperature ◽  
Deposition Temperature ◽  
Room Temperature ◽  
Electron Bombardment ◽  
Process Conditions ◽  
Gas Composition ◽  
Temperature Bias ◽  
Reactive Sputter Deposition ◽  
Process Pressure ◽  
Wide Range

Textured as well as epitaxial thin AlN films are of great interest for a wide range of electro-acoustic and optoelectronic applications. Reduction of the deposition temperature is of vital importance in a number of applications due to thermal budget limitations. In this work we systematically studied the influence of the process parameters on the film properties and identified the factors leading to improved film quality as well as reduced deposition temperature with pulsed direct current sputtering in an Ar/N2 atmosphere. We demonstrated that fully textured (0002) films can be grown under a wide range of conditions. At the same time the full width at half-maximum (FWHM) of the rocking curve of the (0002) XRD peak was found to vary systematically with process conditions—depostion rate, process pressure, gas composition, and substrate temperature. The best films showed a FWHM of 1.2°. We found that by far the most important factor is the arrival energy of the sputtered Al atoms, which is primarily controlled by the process pressure. We report for the first time that fully textured AlN films with a FWHM of under 2° can be grown at room temperature. Other important factors are the ion and electron bombardment of the films and substrate temperature as well as gas composition, although their influence is not as dramatic. Generally, the film quality increases with temperature. Bias and electron bombardment within a certain range also lead to better films.

Preparation and electrical properties of CuInSe2 thin films by pulsed laser deposition using excess Se targets

2010 ◽  
Vol 25 (10) ◽  
pp. 1936-1942 ◽  
Author(s):  
Deuk Ho Yeon ◽  
Bhaskar Chandra Mohanty ◽  
Yeon Hwa Jo ◽  
Yong Soo Cho
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Surface Coverage ◽  
Hole Concentration ◽  
Pulsed Laser ◽  
Deposition Process ◽  
Laser Deposition ◽  
Average Size

An effective way to prepare a robust CuInSe2 (CIS) target for subsequent vapor depositions of thin films is suggested in this work. The technique involves addition of excess Se to presynthesized CIS powder followed by cold pressing and sintering at a temperature as low as 300 °C. Phase-pure chalcopyrite CIS films were prepared at a substrate temperature of 300 °C from targets that contained different amounts of excess Se. The average size of particulates, typical of the pulsed laser deposition process, and their surface coverage decreased with increasing Se content up to 50 wt% in the targets. Films grown from the target with 50 wt% excess Se exhibited a hole concentration of ˜3 × 1019 cm−3 and a Hall mobility of ˜2 cm2/Vs. With the decrease of substrate temperature to room temperature, the resistivity increased from 1.1 × 10−1 to ˜7.5 × 108 Ω·cm, which is attributed to the potential contributions of Se interstitials, CuIn, and VIn defects.

Microstructure of epitaxial VO2 thin films deposited on (1120) sapphire by MOCVD

1994 ◽  
Vol 9 (9) ◽  
pp. 2264-2271 ◽  
Author(s):  
H. Zhang ◽  
H.L.M. Chang ◽  
J. Guo ◽  
T.J. Zhang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Deposition Temperature ◽  
Room Temperature ◽  
High Resolution Electron Microscopy ◽  
Sapphire Substrates ◽  
Resolution Electron ◽  
Initial Nucleation ◽  
Vo2 Thin Films ◽  
Conventional Electron Microscopy

Epitaxial VO2 thin films grown on (1120) sapphire (α-Al2O3) substrates by MOCVD at 600 °C have been characterized by conventional electron microscopy and high resolution electron microscopy (HREM). Three different epitaxial relationships between the monoclinic VO2 films and sapphire substrates have been found at room temperature: I. (200) [010] monoclinic VO2 ‖ (1120) [0001] sapphire, II. (002) [010] monoclinic VO2 ‖ (1120) [0003] sapphire, and III. (020) [102] monoclinic VO2 ‖ (1120) [0001] sapphire. Expitaxial relationships II and III are equivalent to each other when the film possesses tetragonal structure at the deposition temperature; i.e., they can be described as (010) [100] tetragonal VO2 ‖ (1120) [0001] sapphire and (100) [010] tetragonal VO2 ‖ (1120) [0001] sapphire. HREM image shows that the initial nucleation of the film was dominated by the first orientation relationship, but the film then grew into the grains of the second and the third (equivalent to each other at the deposition temperature) epitaxial relationships. Successive 90°transformation rotational twins around the a-axis are commonly observed in the monoclinic films.

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