scholarly journals Temperature-Dependent and Threshold Behavior of Sm3+ Ions on Fluorescence Properties of Lithium Niobate Single Crystals

Materials ◽  
2018 ◽  
Vol 11 (10) ◽  
pp. 2058 ◽  
Author(s):  
Mingming Yang ◽  
Siwei Long ◽  
Xin Yang ◽  
Shaopeng Lin ◽  
Yunzhong Zhu ◽  
...  

Temperature-dependent and threshold behavior of Sm3+ ions on fluorescence properties of lithium niobate (LiNbO3, LN) single crystals were systematically investigated. The test materials, congruent LiNbO3 single crystals (Sm:LN), with various concentrations of doped Sm3+ ions from 0.2 to 2.0 mol.%, were grown using the Czochralski technique. Absorption spectra were obtained at room temperature, and photoluminescence spectra were measured at various temperatures in the range from 73 K to 423 K. Judd–Ofelt theory was applied to calculate the intensity parameters Ωt (t = 2, 4, 6) for 1.0 mol.% Sm3+-doped LiNbO3, as well as the radiative transition rate, Ar, branching ratio, β, and radiative lifetime, τr, of the fluorescent 4G5/2 level. Under 409 nm laser excitation, the photoluminescence spectra of the visible fluorescence of Sm3+ mainly contains 568, 610, and 651 nm emission spectra, corresponding to the energy level transitions of 4G5/2→6H5/2, 4G5/2→6H7/2, and 4G5/2→6H9/2, respectively. The concentration of Sm3+ ions has great impact on the fluorescence intensity. The luminescence intensity of Sm (1.0 mol.%):LN is about ten times as against Sm (0.2 mol.%):LN at 610 nm. The intensity of the fluorescence spectra were found to be highly depend on temperature, as well as the concentration of Sm3+ ions in LiNbO3 single crystals, as predicted; however, the lifetime changed little with the temperature, indicating that the temperature has little effect on it, in Sm:LN single crystals. Sm:LN single crystals, with orange-red emission spectra, can be used as the active material in new light sources, fluorescent display devices, UV-sensors, and visible lasers.

2013 ◽  
Vol 22 ◽  
pp. 298-304
Author(s):  
BEENA BHATIA ◽  
VISHAL PARIHAR

Glasses of the system: xB2O3-10Bi2O3-30Li2O-xPr6O11 where x =1, 1.5 and 2 were prepared by melt quenching technique. Optical absorption and emission spectra have been recorded. The intensities of f-f transition are calculated in term of Judd-Ofelt (JO) intensity parameters Ωλ (λ = 2, 4 and 6). Using the fluorescence data and these Ωλ parameters, various radiative properties like transition probability (Arad), branching ratio (βR), radiative lifetime (τR), and stimulated emission cross section (σp), of various emission lines have been evaluated. The branching ratio for 3P0→3H4 transition is 56% and the predicted spontaneous radiative transition probability rates are fairly high 16411 s−1. This is beneficial for lasing emission.


2006 ◽  
Vol 45 (9B) ◽  
pp. 7389-7396 ◽  
Author(s):  
Satoshi Wada ◽  
Akiko Saito ◽  
Takuya Hoshina ◽  
Hirofumi Kakemoto ◽  
Takaaki Tsurumi ◽  
...  

2005 ◽  
Vol 318 (1) ◽  
pp. 113-118
Author(s):  
N. V. Sidorov ◽  
M. N. Palatnikov ◽  
V. T. Kalinnikov ◽  
I. V. Biryukova ◽  
K. Bormanis

2012 ◽  
Vol 482-484 ◽  
pp. 2547-2550
Author(s):  
Peng Fei Gu ◽  
Ya Nan Wang ◽  
Jia Jia Cao ◽  
Yu Yan ◽  
Tie Qiang Zhang ◽  
...  

We here report the temperature effect on photoluminescence(PL) spectra of PbSe quantum dots (QDs), which exhibit a strong temperature dependence on their spectra position and intensity. They potentially act as the temperature marker, sensing temperature variations and reporting temperature changes remotely through optical readout. In addition, the temperature sensitivity characterized by peak position of PbSe QDs was found to be 0.39nm/°C in a range of 10-100 °C.


2008 ◽  
Vol 102 (1) ◽  
pp. 83-91 ◽  
Author(s):  
M. PALATNIKOV ◽  
O. SHCHERBINA ◽  
I. BIRYUKOVA ◽  
O. MAKAROVA ◽  
K. BORMANIS ◽  
...  

2002 ◽  
Vol 17 (11) ◽  
pp. 2960-2965 ◽  
Author(s):  
E. Arushanov ◽  
L. Ivanenko ◽  
D. Eckert ◽  
G. Behr ◽  
U. K. Rößler ◽  
...  

Results of magnetization and magnetic susceptibility measurements on undoped and Co-doped FeSi2.5 single crystals are presented. The temperature dependence of the magnetic susceptibility of the Co-doped sample in the range of 5–300 K can be explained by temperature-dependent contributions due to paramagnetic centers and the carriers excited thermally in the extrinsic conductivity region. The values of the paramagnetic Curie temperature and activation energy of the donor levels were estimated. It is also shown that the magnetic susceptibility of Co-doped samples cooled in zero external field and in a field are different. This resembles the properties of spin-glasses and indicates the presence of coupling between magnetic centers.


2003 ◽  
Vol 206 (1-4) ◽  
pp. 46-52 ◽  
Author(s):  
S. Mailis ◽  
C. Riziotis ◽  
P.G.R. Smith ◽  
J.G. Scott ◽  
R.W. Eason

2018 ◽  
Vol 2018 ◽  
pp. 1-6
Author(s):  
E. Kheirandish ◽  
N. A. Kouklin ◽  
J. Liang

Temperature-dependent photoluminescence (PL) spectroscopy is carried out to probe radiative recombination and related light emission processes in two-dimensional periodic close-packed nanopore arrays in gallium nitride (np-GaN). The arrays were produced by nonlithographic nanopatterning of wurtzite GaN followed by a dry etching. The results of Raman spectroscopy point to a small relaxation of the compressive stress of ~0.24 GPa in nanoporous vs. bulk GaN. At ~300 K, the PL emission is induced by excitons and not free-carrier interband radiative recombinations. An evolution of the emission spectra with T is confirmed to be mainly a result of a decay of nonexcitonic PL emission and less of spectral shifts of the underlying PL bands. A switching of excitonic PL regime observed experimentally was analyzed within the exciton recombination-generation framework. The study provides new insights into the behaviors and physical mechanisms regulating light emission processes in np-GaN, critical to the development of nano-opto-electronic devices based on mesoscopic GaN.


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