scholarly journals Highly Sensitive and Selective Potassium Ion Detection Based on Graphene Hall Effect Biosensors

Materials ◽  
2018 ◽  
Vol 11 (3) ◽  
pp. 399 ◽  
Author(s):  
Xiangqi Liu ◽  
Chen Ye ◽  
Xiaoqing Li ◽  
Naiyuan Cui ◽  
Tianzhun Wu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Potassium Ion ◽  
Ion Detection ◽  
Highly Sensitive

Fabrication of island-type microelectrode via AFM lithography for a highly sensitive Pt-ion detection system

2008 ◽  
Vol 129 (2) ◽  
pp. 734-740 ◽  
Author(s):  
Inhee Choi ◽  
Sung Koo Kang ◽  
Jeongjin Lee ◽  
Younghun Kim ◽  
Jongheop Yi
Keyword(s):  
Detection System ◽  
Ion Detection ◽  
Highly Sensitive ◽  
Island Type ◽  
Afm Lithography

Enhanced peroxidiase-like activity of gold nanoparticles by DNA for potassium ion detection

2014 ◽  
Vol 44 (10) ◽  
pp. 1641-1646 ◽  
Author(s):  
ChengZhi HUANG ◽  
Yue LIU ◽  
BoZhou ZOU ◽  
Jian WANG
Keyword(s):  
Gold Nanoparticles ◽  
Potassium Ion ◽  
Ion Detection

A Pyrene-Labeled G-Quadruplex Oligonucleotide as a Fluorescent Probe for Potassium Ion Detection in Biological Applications

2005 ◽  
Vol 117 (32) ◽  
pp. 5195-5198 ◽  
Author(s):  
Satoru Nagatoishi ◽  
Takahiko Nojima ◽  
Bernard Juskowiak ◽  
Shigeori Takenaka
Keyword(s):  
Fluorescent Probe ◽  
Potassium Ion ◽  
Biological Applications ◽  
Ion Detection ◽  
G Quadruplex

scholarly journals Topological Bloch bands in graphene superlattices

2015 ◽  
Vol 112 (35) ◽  
pp. 10879-10883 ◽  
Author(s):  
Justin C. W. Song ◽  
Polnop Samutpraphoot ◽  
Leonid S. Levitov
Keyword(s):  
Boron Nitride ◽  
Hall Effect ◽  
Hexagonal Boron Nitride ◽  
Electrical Response ◽  
Model System ◽  
Topological Properties ◽  
Berry Curvature ◽  
Topological Materials ◽  
Highly Sensitive ◽  
Valley Hall Effect

We outline a designer approach to endow widely available plain materials with topological properties by stacking them atop other nontopological materials. The approach is illustrated with a model system comprising graphene stacked atop hexagonal boron nitride. In this case, the Berry curvature of the electron Bloch bands is highly sensitive to the stacking configuration. As a result, electron topology can be controlled by crystal axes alignment, granting a practical route to designer topological materials. Berry curvature manifests itself in transport via the valley Hall effect and long-range chargeless valley currents. The nonlocal electrical response mediated by such currents provides diagnostics for band topology.

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