scholarly journals Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate

Materials ◽  
2018 ◽  
Vol 11 (2) ◽  
pp. 239 ◽  
Author(s):  
◽  
◽  
◽  
◽  
◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Sers Substrate ◽  
Ion Etching ◽  
Wafer Scale ◽  
Nanopillar Arrays

Fabrication of Micromachined Mold Masters for 3-D, High-Aspect-Ratio Cell Culturing Scaffolds

2005 ◽  
Author(s):  
Yanzhu Zhao ◽  
Xiaosong Wu ◽  
Yong-Kyu Yoon ◽  
Jung-Hwan Park ◽  
Stephen J. Kennedy ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Reactive Ion Etching ◽  
Bone Cell ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
Wafer Scale ◽  
Advantages And Disadvantages ◽  
Cell Culturing ◽  
Mold Master

In this paper, three approaches to micromachined mold master structures for molding of a wafer-scale bone culturing platform are compared and contrasted. The processes investigated are a silicon deep-reactive ion etching (DRIE) process, an SU-8/polydimethylsiloxane(PDMS) process, and a multi-step SU-8 process. Upon comparison of the advantages and disadvantages of each approach, a wafer-scale implementation of bone cell culturing substrates is successfully demonstrated using the two-step SU-8 process, and successful duplication of hydrogels based on these molds is demonstrated.

Realization of silicon nanopillar arrays with controllable sidewall profiles by holography lithography and a novel single-step deep reactive ion etching

2010 ◽  
Vol 1258 ◽  
Author(s):  
Yung-Jr Hung ◽  
San-Liang Lee ◽  
Brian J. Thibeault ◽  
Larry A. Coldren
Keyword(s):  
Etching Rate ◽  
Reactive Ion Etching ◽  
Single Step ◽  
Gas Mixture ◽  
Optical Performance ◽  
Ion Etching ◽  
Deep Reactive Ion Etching ◽  
High Etching Rate ◽  
Sidewall Angle ◽  
Nanopillar Arrays

AbstractA simple and efficient approach for fabricating silicon nanopillar arrays with a high aspect ratio and controllable sidewall profiles has been developed by using holographic lithography and a novel single-step deep reactive ion etching. During the etching process, scalloping of the sidewalls can be avoided while reserving the high mask selectivity and high etching rate. Besides, the sidewall angle of resultant patterns can be adjusted by tuning the composition of the gas mixture of single-step DRIE process. We further fabricate a tapered silicon nanopillar array and observe its photonic bandgap property. We believe that the good optical performance of this tapered silicon nanopillar array realized by the proposed approach shows the promising of this process for various applications.

The fabrication of cubic boron nitride nanocone and nanopillar arrays via reactive ion etching

2009 ◽  
Vol 20 (15) ◽  
pp. 155305 ◽  
Author(s):  
Y S Zou ◽  
Y M Chong ◽  
A L Ji ◽  
Y Yang ◽  
Q Ye ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Cubic Boron Nitride ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Nanopillar Arrays

Fabrication of Nanoimprint Stamps by Nanosphere Lithography

2003 ◽  
Vol 776 ◽  
Author(s):  
Chun-Wen Kuo ◽  
Jau-Ye Shiu ◽  
Yi-Hong Cho ◽  
Peilin Chen
Keyword(s):  
Double Layer ◽  
Nanoimprint Lithography ◽  
Reactive Ion Etching ◽  
Nanosphere Lithography ◽  
Large Area ◽  
Periodic Nanostructures ◽  
Ion Etching ◽  
Polystyrene Beads ◽  
Nanopillar Arrays

AbstractAnovel scheme for the fabrication of large-area nanoimprint stamps has been developed based on the utilization of a combination of nanosphere lithography and reactive ion etching. Both single and double layer polystyrene beads have been employed to construct well-ordered, periodic silicon nanopillar arrays. The nanopillar arrays fabricated by this method have been successfully used as the stamps for nanoimprint lithography. Our result indicates that this approach is capable of producing large-area sub-50 nm periodic nanostructures.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
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