scholarly journals Samarium Monosulfide (SmS): Reviewing Properties and Applications

Materials ◽  
2017 ◽  
Vol 10 (8) ◽  
pp. 953 ◽  
Author(s):  
◽  
◽  
Keyword(s):  
Samarium Monosulfide

Growth of samarium monosulfide thin films by co-sputtering deposition

1998 ◽  
Vol 191 (1-2) ◽  
pp. 285-289 ◽  
Author(s):  
P Jin ◽  
M Tazawa ◽  
J.F Huang ◽  
S Tanemura
Keyword(s):  
Thin Films ◽  
Sputtering Deposition ◽  
Samarium Monosulfide

scholarly journals Исследование зеренной структуры мишеней SmS, полученных при различных условиях

2019 ◽  
Vol 45 (22) ◽  
pp. 12
Author(s):  
И.С. Волчков ◽  
Е.Б. Баскаков ◽  
В.И. Стрелов ◽  
В.М. Каневский
Keyword(s):  
High Temperature ◽  
High Frequency ◽  
High Quality ◽  
High Frequency Current ◽  
Samarium Monosulfide ◽  
High Temperature Processing ◽  
Current Annealing ◽  
Frequency Current

The grains structure of samples of а SmS targets, obtained by pressing methods without and with the use of subsequent high-temperature processing by high- frequency currents (further HFC), under various pressure was investigated. The density of samples obtained under different conditions was determined. The optimal technological conditions for obtaining high-quality targets of a samarium monosulfide are determined: high-frequency annealing with pressing under pressure of 5t/cm 2 is more effective than high-frequency current annealing with pressing under pressure of 4 t/cm 2 . A significant content of unbound metallic samarium in samples obtained by pressing at 5 t/cm 2 but not subjected to high-temperature HFC annealing has been established.

Fabrication Of Samarium Monosulfide Thin Films By An Electrodeposition Process

2006 ◽  
Vol 21 (3) ◽  
pp. 150-153
Author(s):  
Huang Jian-Feng ◽  
Ma Xiao-Bo ◽  
Cao Li-Yun ◽  
He Hai-Yan ◽  
Wu Jian-Peng
Keyword(s):  
Thin Films ◽  
Electrodeposition Process ◽  
Samarium Monosulfide

Samarium-monosulfide-based semiconductor strain gages for spacecraft-strain transformation

2013 ◽  
Vol 47 (7) ◽  
pp. 601-604 ◽  
Author(s):  
N. M. Volodin ◽  
Yu. N. Mishin ◽  
V. V. Kaminskii ◽  
Yu. V. Zakharov
Keyword(s):  
Strain Gages ◽  
Strain Transformation ◽  
Samarium Monosulfide ◽  
Semiconductor Strain

The thermally induced metal–semiconducting phase transition of samarium monosulfide (SmS) thin films

2009 ◽  
Vol 22 (1) ◽  
pp. 015005 ◽  
Author(s):  
E Rogers ◽  
P F Smet ◽  
P Dorenbos ◽  
D Poelman ◽  
E van der Kolk
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Thermally Induced ◽  
Samarium Monosulfide

ChemInform Abstract: Preparation of Samarium Monosulfide via Samarium Naphthalenide.

ChemInform ◽  
2010 ◽  
Vol 25 (29) ◽  
pp. no-no
Author(s):  
O. V. ANDREEV ◽  
M. N. BOCHKAREV ◽  
N. M. VOLODIN ◽  
T. V. NEKRASOVA ◽  
A. V. PROTCHENKO
Keyword(s):  
Samarium Monosulfide

Technical ceramics from samarium monosulfide for the thermal explosion and magnetron methods of production of SmS films

2017 ◽  
Vol 473 (2) ◽  
pp. 66-70 ◽  
Author(s):  
V. G. Bamburov ◽  
O. V. Andreev ◽  
V. V. Ivanov ◽  
A. N. Voropai ◽  
A. V. Gorshkov ◽  
...  
Keyword(s):  
Thermal Explosion ◽  
Samarium Monosulfide ◽  
Technical Ceramics

scholarly journals Chemistry and Technology of Samarium Monosulfide

2016 ◽  
Vol 18 (1) ◽  
pp. 55 ◽  
Author(s):  
O.V. Andreev ◽  
V.V. Ivanov ◽  
A.V. Gorshkov ◽  
P.V. Miodushevskiy ◽  
P.O. Andreev
Keyword(s):  
Heat Treatment ◽  
Large Scale ◽  
Film Deposition ◽  
Congruent Melting ◽  
Flash Evaporation ◽  
Sensitive Material ◽  
X Ray ◽  
Pressure Sensitive ◽  
Congruent Melting Temperature ◽  
Samarium Monosulfide

<p class="Pa10">Samarium monosulfide SmS (Fm3m, а = 5.967 Å, ΔЕ = 0.23 V, n = 10<sup>20</sup> cm<sup>–1</sup>, <em>σ</em><em> </em>= 500 Ω<sup>–1</sup> cm<sup>–1</sup>, <em>α</em><em> </em>= 350 μВ/K) is a thermoelectric material (Z&gt;1) and, at the same time, a pressure-sensitive material (K≥40–50). Samarium monosulfide is a daltonide phase with a solid solution whose extent is mostly in the range of cationic vacancies: Sm<sub>1+x </sub>S<sub>1-x</sub>□<sub>2x</sub> (<em>x </em>= 0–0.035; 1750 K). The congruent melting temperature of SmS is 2475 K. In the Sm–S system, Sm<sub>3</sub>S<sub>4</sub> crystallizes from melt without change in composition. Samarium monosulfide thermally dissociates to Sm<sub>3</sub>S<sub>4</sub> and Sm. Large-scale SmS lots are produced from samarium and sulfur. Synthesis is carried out in sealed-off silica glass ampoules at 500–1350 K followed by heat treatment in tantalum crucibles at 1500–2400 K. The reaction of metal samarium with sulfur results in the formation of sulfide phases that coat the samarium surface in the following order: SmS, Sm<sub>3</sub>S<sub>4</sub>, Sm<sub>2</sub>S<sub>3</sub>, and SmS<sub>2</sub>. Subsequent annealing at 1500–1800 K provides SmS yields up to 96–97 mol %. Equilibrium minor phases for SmS are Sm<sub>3</sub>S<sub>4</sub>, Sm<sub>2</sub>О<sub>2</sub>S, and Sm. X-ray amorphous SmS was prepared by reacting organic samarium compounds with sulfur or H2S. The samarium (+2) oxidation state determines the chemical specifics of SmS. 90–120 μm SmS powders are thermally hydrolyzed starting at 600 K with Н<sub>2</sub> evolution and oxidize starting at 520 K to yield Sm<sub>3</sub>S<sub>4</sub> and then Sm<sub>2</sub>О<sub>2</sub>S phases. A 90–120 μm SmS fraction for film deposition by flash evaporation is prepared by milling annealed SmS samples. Tablets 75 mm in diameter for use in magnetron sputtering are pressed from a &lt;60-μm fraction.</p>

scholarly journals Switchable Piezoresistive SmS Thin Films on Large Area

Sensors ◽  
2019 ◽  
Vol 19 (20) ◽  
pp. 4390 ◽  
Author(s):  
Andreas Sousanis ◽  
Dirk Poelman ◽  
Christophe Detavernier ◽  
Philippe F. Smet
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Metallic State ◽  
Large Area ◽  
Thermally Induced ◽  
X Ray ◽  
Piezoresistive Sensors ◽  
Deposition Parameters ◽  
Structural And Electrical Properties ◽  
Samarium Monosulfide

Samarium monosulfide (SmS) is a switchable material, showing a pressure-induced semiconductor to metal transition. As such, it can be used in different applications such as piezoresistive sensors and memory devices. In this work, we present how e-beam sublimation of samarium metal in a reactive atmosphere can be used for the deposition of semiconducting SmS thin films on 150 mm diameter silicon wafers. The deposition parameters influencing the composition and properties of the thin films are evaluated, such as the deposition rate of Sm metal, the substrate temperature and the H2S partial pressure. We then present the changes in the optical, structural and electrical properties of this compound after the pressure-induced switching to the metallic state. The back-switching and stability of SmS thin films are studied as a function of temperature and atmosphere via in-situ X-ray diffraction. The thermally induced back switching initiates at 250 °C, while above 500 °C, Sm2O2S is formed. Lastly, we explore the possibility to determine the valence state of the samarium ions by means of X-ray photoelectron spectroscopy.

Anomalous thermal electromotive force in samarium monosulfide

2000 ◽  
Vol 45 (5) ◽  
pp. 659-661 ◽  
Author(s):  
M. M. Kazanin ◽  
V. V. Kaminskii ◽  
S. M. Solov’ev
Keyword(s):  
Electromotive Force ◽  
Thermal Electromotive Force ◽  
Samarium Monosulfide
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