scholarly journals Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol) for the Gate Insulator of Pentacene-Based Thin-Film Transistors

Materials ◽  
2017 ◽  
Vol 10 (7) ◽  
pp. 742
Author(s):  
Ching-Lin Fan ◽  
Ming-Chi Shang ◽  
Shea-Jue Wang ◽  
Mao-Yuan Hsia ◽  
Win-Der Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Induction Heating ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Cross Linking ◽  
Heating Scheme ◽  
The Cross ◽  
Power Microwave

Low-Temperature Formation of SiNx Gate Insulator for Thin-Film Transistor Using CAT-CVD Method

1998 ◽  
Vol 508 ◽  
Author(s):  
A. Izumi ◽  
T. Ichise ◽  
H. Matsumura
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
State Density ◽  
Gate Insulator ◽  
Catalytic Chemical Vapor Deposition ◽  
Silicon Nitride Films

AbstractSilicon nitride films prepared by low temperatures are widely applicable as gate insulator films of thin film transistors of liquid crystal displays. In this work, silicon nitride films are formed around 300 °C by deposition and direct nitridation methods in a catalytic chemical vapor deposition system. The properties of the silicon nitride films are investigated. It is found that, 1) the breakdown electric field is over 9MV/cm, 2) the surface state density is about 1011cm−2eV−1 are observed in the deposition films. These result shows the usefulness of the catalytic chemical vapor deposition silicon nitride films as gate insulator material for thin film transistors.

Wide range modulation of synaptic weight in thin-film transistors with hafnium oxide gate insulator and indium-zinc oxide channel layer for artificial synapse application

Nanoscale ◽  
2021 ◽  
Author(s):  
Keonwon Beom ◽  
Jimin Han ◽  
Hyun-Mi Kim ◽  
Tae-Sik Yoon
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Synaptic Weight ◽  
Drain Current ◽  
Gate Insulator ◽  
Channel Layer ◽  
Indium Zinc Oxide ◽  
Wide Range

Wide range synaptic weight modulation with a tunable drain current was demonstrated in thin-film transistors (TFTs) with a hafnium oxide (HfO2−x) gate insulator and an indium-zinc oxide (IZO) channel layer...

Cross-Linking of Poly(arylenebutadiynylene)s and Its Effect on Charge Carrier Mobilities in Thin-Film Transistors

2021 ◽  
Author(s):  
Sultan Otep ◽  
Kosuke Ogita ◽  
Naomasa Yomogita ◽  
Kazunori Motai ◽  
Yang Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Charge Carrier ◽  
Thin Film Transistors ◽  
Cross Linking

Low-power dihexylquaterthiophene-based thin film transistors for analog applications

2008 ◽  
Vol 92 (14) ◽  
pp. 143503 ◽  
Author(s):  
Dana A. Serban ◽  
Valeria Kilchytska ◽  
A. Vlad ◽  
Ana Martin-Hoyas ◽  
B. Nysten ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Power ◽  
Thin Film Transistors

Environmental effects on the electrical behavior of pentacene thin-film transistors with a poly(methyl methacrylate) gate insulator

2013 ◽  
Vol 14 (9) ◽  
pp. 2101-2107 ◽  
Author(s):  
Jaehoon Park ◽  
Lee-Mi Do ◽  
Jin-Hyuk Bae ◽  
Ye-Sul Jeong ◽  
Christopher Pearson ◽  
...  
Keyword(s):  
Thin Film ◽  
Methyl Methacrylate ◽  
Environmental Effects ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Electrical Behavior ◽  
Poly Methyl Methacrylate

Surface grafting of octylamine onto poly(ethylene-alt-maleic anhydride) gate insulators for low-voltage DNTT thin-film transistors

2016 ◽  
Vol 18 (12) ◽  
pp. 8522-8528 ◽  
Author(s):  
Yun-Seo Choe ◽  
Mi Hye Yi ◽  
Ji-Heung Kim ◽  
Yun Ho Kim ◽  
Kwang-Suk Jang
Keyword(s):  
Thin Film ◽  
Maleic Anhydride ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Gate Insulator ◽  
Surface Grafting ◽  
Gate Insulators ◽  
Poly Ethylene

We report the surface grafting of octylamine onto a poly(ethylene-alt-maleic anhydride) (PEMA) gate insulator for enhancing the performance of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) thin-film transistors.

Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator

2010 ◽  
Vol 13 (5) ◽  
pp. H141 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Soon-Won Jung ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Indium Oxide ◽  
Thin Film Transistors ◽  
Nonvolatile Memory ◽  
Gate Insulator ◽  
Solution Processed ◽  
Zinc Indium Oxide
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