scholarly journals Low-Cost Electrodeposition of Size-Tunable Single-Crystal ZnO Nanorods

Fibers ◽  
2021 ◽  
Vol 9 (6) ◽  
pp. 38
Author(s):  
Elias Sakellis ◽  
Antonis Markopoulos ◽  
Christos Tzouvelekis ◽  
Manolis Chatzigeorgiou ◽  
Anastasios Travlos ◽  
...  
Keyword(s):  
Single Crystal ◽  
Seed Layer ◽  
Physical Vapor Deposition ◽  
Growth Parameters ◽  
Low Cost ◽  
Zno Nanorods ◽  
Large Area ◽  
Glass Slides ◽  
Ito Glass ◽  
Effect Of Oxygen

In this paper we report a low cost, simple, electrochemical method for large-area growth of single crystal ZnO nanorods. The method utilizes a metallic zinc foil as the source of the necessary zinc ions for ZnO growth on indium-doped tin oxide (ITO) glass slides. The method is thoroughly discussed and investigated varying all the parameters involved. The resulting ZnO nanorods are highly oriented along c-axis and densely packed, while their length and diameter can be tuned by varying the growth parameters. Two different types of seed layers on the ITO glass slides are tested. A seed layer made by spin coating of ZnO nanoparticles results in a twofold increase of the ZnO nanorod surface density as compared with a ZnO thin film seed layer by physical vapor deposition. Additionally, the effect of oxygen supply during electrodeposition was investigated as a crucial regulatory parameter not only for the geometrical and topological characteristics of the ZnO nano-arrays but for their physical properties as well.

Growth and processing of heteroepitaxial 3C-SiC films for electronic devices applications

2012 ◽  
Vol 1433 ◽  
Author(s):  
A. Severino ◽  
M. Mauceri ◽  
R. Anzalone ◽  
A. Canino ◽  
N. Piluso ◽  
...  
Keyword(s):  
Growth Parameters ◽  
Low Cost ◽  
Electronic Devices ◽  
Young Modulus ◽  
Interesting Property ◽  
Large Area ◽  
Si Substrates ◽  
Application Fields ◽  
Sic Films

ABSTRACT3C-SiC is very attractive due the chance to be grown on large-area, low-cost Si substrates. Moreover, 3C-SiC has higher channel electron mobility with respect to 4H-SiC, interesting property in MOSFET applications. Other application fields where 3C-SiC can play a significant role are solar cells and MEMS-based sensors. In this work, we present a general overview of 3C-SiC growth on Si substrate. The influence of growth parameters, such as the growth rate, on the crystal quality of 3C-SiC films is discussed. The main issue for 3C-SiC development is the reduction of the stacking fault density, which shows an exponential decreasing trend with the film thickness tending to a saturation value of about 1000 cm-1. Some aspect of processing will be also faced with the realization of cantilever for Young modulus calculations and the implantation of Al ions for the study of damaging and recovery of the 3C-SiC crystal.

scholarly journals Growth of ZnO nanorods on different substrates using hydrothermal method

2020 ◽  
Vol 16 (2) ◽  
pp. 154-157
Author(s):  
Rina Dewi Mayasari ◽  
Aditya Eka Mulyono ◽  
Masmui Masmui ◽  
Wawas Swathatafrijiah ◽  
Agustanhakri Agustanhakri ◽  
...  
Keyword(s):  
Hydrothermal Method ◽  
Seed Layer ◽  
Growth Parameters ◽  
Zno Nanorods ◽  
Vertical Direction ◽  
Hexagonal Wurtzite Structure ◽  
Average Diameter ◽  
Sio2 Film ◽  
Acetate Solution ◽  
Au Film

Zinc oxide (ZnO) nanorods have been grown on different substrates, i.e. gold film-coated BK-7 glass (Au-film/BK7), microscope glass slide (MGS), silicon oxide film-coated silicon (SiO2-film/Si), to investigate the effects of different substrates on its material properties. The growth process was started by dipping substrates in zinc acetate solution to fabricate a seed layer, followed by growing the ZnO nanorods in zinc nitrate tetrahydrate solution based on hydrothermal method at 95 °C for 6 hour. In this process, seed layer and ZnO nanorods were annealed at 350 °C for 2 hours. The characterization results using X-ray diffraction and field effect scanning electron microscope showed that ZnO nanorods were successfully grown homogenously and mostly in vertical direction with hexagonal wurtzite structure. The diameter size of ZnO nanorods was significantly influenced by the type of material substrate. ZnO nanorods on Au-film/BK-7 glass have the smallest diameter size of (239±51) nm, while the average diameter size of ZnO nanorods on MGS is of (269±53) nm and ZnO nanorods on SiO2-film/Si have the largest diameter size of (354±80) nm. The effect of substrates on different size of ZnO nanorods may be regarded to the intrinsic thermal conductivity of substrate material. Hence, the synthesis and growth parameters for the different substrates differ from each other and need to be optimized in order to grow ZnO nanostructures

scholarly journals Synthesis of Vertically Aligned ZnO Nanorods Using Sol-gel Seeding and Colloidal Lithography Patterning

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Ebrahim Chalangar ◽  
Omer Nur ◽  
Magnus Willander ◽  
Anders Gustafsson ◽  
Håkan Pettersson
Keyword(s):  
Seed Layer ◽  
Lattice Mismatch ◽  
Low Cost ◽  
Sol Gel ◽  
Zno Nanorods ◽  
Silicon Substrates ◽  
Colloidal Lithography ◽  
High Crystalline Quality ◽  
Vertically Aligned ◽  
Cost Efficient

AbstractDifferent ZnO nanostructures can be grown using low-cost chemical bath deposition. Although this technique is cost-efficient and flexible, the final structures are usually randomly oriented and hardly controllable in terms of homogeneity and surface density. In this work, we use colloidal lithography to pattern (100) silicon substrates to fully control the nanorods' morphology and density. Moreover, a sol-gel prepared ZnO seed layer was employed to compensate for the lattice mismatch between the silicon substrate and ZnO nanorods. The results show a successful growth of vertically aligned ZnO nanorods with controllable diameter and density in the designated openings in the patterned resist mask deposited on the seed layer. Our method can be used to fabricate optimized devices where vertically ordered ZnO nanorods of high crystalline quality are crucial for the device performance.

Influences of MCrAlY Coatings and TBCs on Oxidation Behavior of a Ni-Based Single Crystal Superalloy

2015 ◽  
Vol 816 ◽  
pp. 289-296 ◽  
Author(s):  
Long Shi ◽  
Li Xin ◽  
Hua Wei ◽  
Sheng Long Zhu ◽  
Fu Hui Wang
Keyword(s):  
Single Crystal ◽  
Bond Coat ◽  
Physical Vapor Deposition ◽  
Low Cost ◽  
High Strength ◽  
Substrate Material ◽  
Single Crystal Superalloy ◽  
Thermal Growth ◽  
Nicraly Coating ◽  
Academy Of Sciences

DD98M alloy is a second generation nickel-based single crystal superalloy without Re addition, which is developed by Institute of Metal Research, Chinese Academy of Sciences. It is a combination of attractively strong points including high strength and low cost. In this work, Ni-based single crystal superalloy DD98M was adopted as the substrate material. Two types MCrAlY (M denote metal) coatings were deposited on DD98M specimen by arc ion plating and YSZ topcoat (TC) were deposited on the substrate by electron beam physical vapor deposition (EB-PVD) on the NiCrAlY bond coat (BC). Experimental results showed that the application of the NiCrAlY and NiCoCrAlYHfSi coatings improved the oxidation resistance of DD98M obviously at 1000 °C. The adhesion of oxide scale of NiCoCrAlYHfSi coating was much better than that of NiCrAlY coating. TBCs application greatly enhanced the operating temperature and significantly improved the durability of the substrate. The thermal growth oxidation (TGO) between the bond coat and topcoat play an important role in adhesion of the whole coating system.

scholarly journals Fabrication of Novel 2D NiO Nanosheet Branched on 1D-ZnO Nanorod Arrays for Gas Sensor Application

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Le Thuy Hoa ◽  
Huynh Ngoc Tien ◽  
Seung Hyun Hur
Keyword(s):  
Carrier Transport ◽  
Gas Adsorption ◽  
Low Cost ◽  
Zno Nanorods ◽  
Hydrothermal Process ◽  
Large Area ◽  
Highly Sensitive ◽  
P Type ◽  
Reducing Gases ◽  
Nio Nanosheets

Fabrication of 3D structures composed of 1D n-type ZnO nanorods (NRs) and 2D p-type NiO nanosheets (NSs) by a low-cost, low-temperature, and large-area scalable hydrothermal process and its use in highly sensitive NO2gas sensors were studied. The p-n heterojunctions formed by NiO-ZnO interfaces as well as large area two-dimensional NiO NSs themselves increased the adsorption of NO2. Moreover, the charge transfer between NiO and ZnO enhanced the responsivity and sensitivity of NO2sensing even at a concentration of 1 ppm. The 30-min NiO NS growth on ZnO NRs in the hybrid sensor showed the highest sensitivity due to the formation of optimum p-n heterojunctions between ZnO NRs and NiO NSs for gas adsorption and carrier transport. Low responsivity toward reducing gases was also observed.

Second harmonic generation of femtosecond pulses using ZnO nanorods grown by chemical bath deposition with drop casted seed layer

2016 ◽  
Vol 25 (03) ◽  
pp. 1650029 ◽  
Author(s):  
R. Panda ◽  
S. Bhattacharya ◽  
R. Samal ◽  
A. Singh ◽  
P. K. Sahoo ◽  
...  
Keyword(s):  
Second Harmonic Generation ◽  
Chemical Bath Deposition ◽  
Harmonic Generation ◽  
Seed Layer ◽  
Second Harmonic ◽  
Low Cost ◽  
Zno Nanorods ◽  
Fs Laser ◽  
Cbd Method ◽  
Very High

We report efficient second harmonic generation (SHG) of femtosecond (fs) pulses using ZnO nanorods grown by chemical bath deposition (CBD) method with drop-casted seed layer. The SHG behavior of the nanorods are tested using an amplified Ti:sapphire fs laser of pulse duration of 100[Formula: see text]fs at 800[Formula: see text]nm. The SHG signal from the ZnO nanorods is found to be of very high intensity as detected by a low cost, compact spectrometer. In a comparative study, the SHG signal from ZnO nanorods grown over seed layer is found to be 12 times higher than the SHG signal observed from the ZnO nanorods grown on substrate without any seed layer. The efficient SHG in former case is due to the growth of high density, well oriented nanorods whereas the lower signal in the later case is due to growth of low density, randomly oriented nanorods. The polarization dependence behavior of the SHG signal is studied both experimentally and theoretically.

Organic field-effect transistors based on tetrathiafulvalene derivatives

2008 ◽  
Vol 80 (11) ◽  
pp. 2405-2423 ◽  
Author(s):  
Xike Gao ◽  
Wenfeng Qiu ◽  
Yunqi Liu ◽  
Gui Yu ◽  
Daoben Zhu
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Device Fabrication ◽  
Organic Field Effect Transistors ◽  
Large Area ◽  
Solution Processed

In recent years, tetrathiafulvalene (TTF) and its derivatives have been used as semiconducting materials for organic field-effect transistors (OFETs). In this review, we summarize the recent progress in the field of TTF-based OFETs. We introduce the structure and operation of OFETs, and focus on TTF derivatives used in OFETs. TTF derivatives used in OFETs can be divided into three parts by the semiconductor's morphology and the device fabrication technique: (1) TTF derivatives used for single-crystal OFETs, (2) TTF derivatives used for vacuum-deposited thin-film OFETs, and (3) TTF derivatives used for solution-processed thin-film OFETs. The single-crystal OFETs based on TTF derivatives were fabricated by drop-casting method and showed high performance, with the mobility up to 1.4 cm2/Vs. The vacuum-deposited thin-film OFETs based on TTF derivatives were well developed, some of which have shown high performance comparable to that of amorphous silicon, with good air-stability. Although the mobilities of most solution-processed OFETs based on TTF derivatives are limited at 10-2 cm2/Vs, the study on solution-processable TTF derivatives and their devices are promising, because of their low-cost, large-area-coverage virtues. The use of organic charge-transfer (OCT) compounds containing TTF or its derivatives in OFETs is also included in this review.

Zno Nanorod Synthesis via Controlled ZnO Seed Layer by Filtered Pulse Cathodic Vacuum Arc: Luminescence Enhancement

2013 ◽  
Vol 802 ◽  
pp. 1-6
Author(s):  
Anumut Deachana ◽  
Paul K. Chu ◽  
Dheerawan Boonyawan
Keyword(s):  
Seed Layer ◽  
Energy Gap ◽  
Defect Density ◽  
Zno Nanorods ◽  
Vacuum Arc ◽  
Zno Nanorod ◽  
Large Area ◽  
High Quality ◽  
Continuous Growth ◽  
Seed Layers

A simple synthesis route to high-quality ZnO nanorod is reported, utilizing ZnO thin films grown by Filtered Pulse Cathodic Vacuum Arc (FPCVA) deposition as seed layers and continuous growth by hydrothermal method. Depending upon the FPCVA deposited conditions, implanted voltages, thickness and annealing temperature of ZnO seed layer, the surface morphology of the ZnO nanorod on ZnO film was noticeably different. The average diameters of the nanorod on Al substrates varied from about 131.99 ± 23.87 to 418.17 ±75.50 nm. The grown ZnO nanorod showed a high crystallinity with energy gap of 3.37 eV and low defect density confirmed by UV/VIS Spectrometer and photoluminescence spectrum (PL). Large-area growth, quasi-aligned and high quality indicates that the ZnO nanorods produced have potential application in field emission and optoelectronic devices.

Computer simulation study about the dependence of amorphous silicon photonic waveguides efficiency on the material quality

2020 ◽  
Vol 90 (3) ◽  
pp. 30502
Author(s):  
Alessandro Fantoni ◽  
João Costa ◽  
Paulo Lourenço ◽  
Manuela Vieira
Keyword(s):  
Amorphous Silicon ◽  
High Throughput Screening ◽  
Simulation Analysis ◽  
Low Cost ◽  
Deposition Process ◽  
Large Area ◽  
Sidewall Roughness ◽  
Sensing Applications ◽  
Fabrication Defects ◽  
The Impact

Amorphous silicon PECVD photonic integrated devices are promising candidates for low cost sensing applications. This manuscript reports a simulation analysis about the impact on the overall efficiency caused by the lithography imperfections in the deposition process. The tolerance to the fabrication defects of a photonic sensor based on surface plasmonic resonance is analysed. The simulations are performed with FDTD and BPM algorithms. The device is a plasmonic interferometer composed by an a-Si:H waveguide covered by a thin gold layer. The sensing analysis is performed by equally splitting the input light into two arms, allowing the sensor to be calibrated by its reference arm. Two different 1 × 2 power splitter configurations are presented: a directional coupler and a multimode interference splitter. The waveguide sidewall roughness is considered as the major negative effect caused by deposition imperfections. The simulation results show that plasmonic effects can be excited in the interferometric waveguide structure, allowing a sensing device with enough sensitivity to support the functioning of a bio sensor for high throughput screening. In addition, the good tolerance to the waveguide wall roughness, points out the PECVD deposition technique as reliable method for the overall sensor system to be produced in a low-cost system. The large area deposition of photonics structures, allowed by the PECVD method, can be explored to design a multiplexed system for analysis of multiple biomarkers to further increase the tolerance to fabrication defects.

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