scholarly journals Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency

Energies ◽  
2016 ◽  
Vol 9 (1) ◽  
pp. 42 ◽  
Author(s):  
Mitsuoki Hishida ◽  
Takeyuki Sekimoto ◽  
Mitsuhiro Matsumoto ◽  
Akira Terakawa
Keyword(s):  
Solar Cells ◽  
High Frequency ◽  
Plasma Deposition ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
High Conversion Efficiency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Recent advances in very high frequency plasma enhanced CVD process for the fabrication of thin film silicon solar cells

2009 ◽  
Vol 517 (17) ◽  
pp. 4758-4761 ◽  
Author(s):  
Jatindra K. Rath ◽  
Yanchao Liu ◽  
Monica Brinza ◽  
Arjan Verkerk ◽  
Caspar van Bommel ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Frequency ◽  
Silicon Solar Cells ◽  
Very High Frequency ◽  
Plasma Enhanced Cvd ◽  
Recent Advances ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 663-665 ◽  
pp. 600-603
Author(s):  
Xiang Wang ◽  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
...  
Keyword(s):  
High Frequency ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogen Flow ◽  
Transmission Electron ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.

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