scholarly journals An Equivalent Electrical Circuit Model of Proton Exchange Membrane Fuel Cells Based on Mathematical Modelling

Energies ◽  
2012 ◽  
Vol 5 (8) ◽  
pp. 2724-2744 ◽  
Author(s):  
Melika Hinaje ◽  
Stéphane Raël ◽  
Panee Noiying ◽  
Dinh An Nguyen ◽  
Bernard Davat
Keyword(s):  
Fuel Cells ◽  
Mathematical Modelling ◽  
Proton Exchange Membrane ◽  
Electrical Circuit ◽  
Circuit Model ◽  
Proton Exchange ◽  
Equivalent Electrical Circuit ◽  
Electrical Circuit Model ◽  
Equivalent Electrical Circuit Model ◽  
Exchange Membrane

Diode Parameters and Equivalent Electrical Circuit Model of n-Type Silicon/B-Doped p-Type Ultrananocrystalline Diamond Heterojunctions Manufactured Through Coaxial Arc Plasma Deposition

2020 ◽  
Vol 20 (8) ◽  
pp. 4884-4891
Author(s):  
Rawiwan Chaleawpong ◽  
Nathaporn Promros ◽  
Peerasil Charoenyuenyao ◽  
Phongsaphak Sittimart ◽  
Satoshi Takeichi ◽  
...  
Keyword(s):  
Plasma Deposition ◽  
Electrical Circuit ◽  
Circuit Model ◽  
Arc Plasma ◽  
Equivalent Electrical Circuit ◽  
Type Silicon ◽  
Ultrananocrystalline Diamond ◽  
Electrical Circuit Model ◽  
Equivalent Electrical Circuit Model ◽  
P Type

Coaxial arc plasma deposition (CAPD) was employed to manufacture n-type silicon/boron-doped p-type ultrananocrystalline diamond heterojunctions. Measurement and analysis of their dark current density-voltage curve were carried out at room temperature in order to calculate the requisite junction parameters using the Cheung and Norde approaches. For the calculation based on the Cheung approach, the series resistance (Rs), ideality factor (n) and barrier height (Φb) were 4.58 kΩ, 2.82 and 0.75 eV, respectively. The values of Rs and Φb were in agreement with those calculated using the Norde approach. Their characteristics for alternative current impedance at different frequency values were measured and analyzed as a function of the voltage (V) values ranging from 0 V to 0.5 V. Appearance of the real (Z′) and imaginary (Z″) characteristics for all V values presented single semicircles. The centers of the semicircular curves were below the Z′ axis and the diameter of the semicircles decreased with increments of the V value. The proper equivalent electrical circuit model for the manufactured heterojunction behavior was comprised of Rs combined with the parallel circuit of resistance and constant phase element.

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