scholarly journals On the Potential of Silicon Intermediate Band Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3044 ◽  
Author(s):  
Esther López ◽  
Antonio Martí ◽  
Elisa Antolín ◽  
Antonio Luque
Keyword(s):  
Solar Cells ◽  
Auger Recombination ◽  
Low Cost ◽  
Operating Conditions ◽  
Maximum Efficiency ◽  
Efficiency Gain ◽  
High Concentration ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells ◽  
High Concentrations

Intermediate band solar cells (IBSCs) have an efficiency limit of 63.2%, which is significantly higher than the 40.7% limit for conventional single gap solar cells. In order to achieve the maximum efficiency, the total bandgap of the cell should be in the range of ~2 eV. However, that fact does not prevent other cells based on different semiconductor bandgaps from benefiting from the presence of an intermediate band (IB) within their bandgap. Since silicon (1.12 eV bandgap) is the dominant material in solar cell technology, it is of interest to determine the limit efficiency of a silicon IBSC, because even a modest gain in efficiency could trigger a large commercial interest if the IB is implemented at low cost. In this work we study the limit efficiency of silicon-based IBSCs considering operating conditions that include the use of non-ideal photon casting between the optical transitions, different light intensities and Auger recombination. The results lead to the conclusion that a silicon IBSC, operating under the conventional model in which the sub-bandgaps add to the total silicon gap, provides an efficiency gain if operated in the medium-high concentration range. The performance of these devices is affected by Auger recombination only under extremely high concentrations.

CONSTRUCTION COMPONENTS ENGINEERING IN INTERMEDIATE BAND SOLAR CELLS

2012 ◽  
Vol 26 (14) ◽  
pp. 1250090 ◽  
Author(s):  
N. E. GORJI ◽  
M. HOUSHMAND ◽  
S. S. DEHKORDI
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Filling Factor ◽  
High Efficiency ◽  
Low Cost ◽  
Maximum Efficiency ◽  
Maximum Point ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

The parameter electron filling factor can be taken as a scale for the electronic states in the intermediate band which should be de-localized and thus the unconfined electrons at the quantum dots. For three different value of electron filling factor, the sunlight concentration effect on the efficiency of a quantum dot solar cell is calculated. The maximum point of efficiency and optimum thickness of the cell obtained under three different sunlight concentrations. We show the importance of electron filling factor as a parameter to be more considered. This parameter can be controlled by the quantum dots size and distance between quantum dot layers in the active region. Analysis of above mentioned parameters suggest that to attain a maximum efficiency, the size of the quantum dots and the distance between the periodically arrayed dot layers have to be optimized. In addition, sunlight concentration is recommended as an effective approach to have high efficiency and low cost level solar cells.

Efficiency Estimations for Multijunction and Intermediate Band Solar Cells Using Actual Measured Solar Spectra in Japan

2015 ◽  
Vol 137 (3) ◽  
Author(s):  
Shunya Naitoh ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Equivalent Circuit ◽  
Triple Junction ◽  
Maximum Efficiency ◽  
Spectral Variation ◽  
Intermediate Band ◽  
Intermediate Band Solar Cell ◽  
Intermediate Band Solar Cells

An intermediate band solar cell (IBSC) whose equivalent circuit is similar to a multijunction (MJ) solar cell but with an additional parallel diode connection is shown to be more robust to spectral variation than a series-connected MJ solar cell. We have calculated the limiting efficiencies of IBSC and MJ solar cells using the measured solar spectra in Japan. Even though the maximum efficiency of an IBSC is lower than a triple junction (3J) solar cell at airmass (AM)1.5, the IBSC would generate more annual electricity by 1% than 3J cell at 1 sun, if they had been optimized at AM1.5.

scholarly journals Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 344
Author(s):  
Yasushi Shoji ◽  
Ryo Tamaki ◽  
Yoshitaka Okada
Keyword(s):  
Solar Cells ◽  
Molecular Beam ◽  
Optical Excitation ◽  
Material System ◽  
Intermediate Band ◽  
Temperature Characteristics ◽  
Quantum Nanostructures ◽  
Band Engineering ◽  
Intermediate Band Solar Cells ◽  
Carrier Extraction

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechanism requires the formation of a strong quantum confinement structure. Therefore, we focused on the material system with GaSb quantum nanostructures embedded in AlGaAs layers. However, studies involving crystal growth of GaSb quantum nanostructures on AlGaAs layers have rarely been reported. In our work, we fabricated GaSb quantum dots (QDs) and quantum rings (QRs) on AlGaAs layers via molecular-beam epitaxy. Using the Stranski–Krastanov growth mode, we demonstrated that lens-shaped GaSb QDs can be fabricated on AlGaAs layers. In addition, atomic force microscopy measurements revealed that GaSb QDs could be changed to QRs under irradiation with an As molecular beam even when they were deposited onto AlGaAs layers. We also investigated the suitability of GaSb/AlGaAs QDSCs and QRSCs for use in IBSCs by evaluating the temperature characteristics of their external quantum efficiency. For the GaSb/AlGaAs material system, the QDSC was found to have slightly better two-step optical excitation temperature characteristics than the QRSC.

scholarly journals Molecular beam and pulsed laser deposition of ZnS:Cr for intermediate band solar cells

2015 ◽  
Vol 141 ◽  
pp. 322-330 ◽  
Author(s):  
Mohammadreza Nematollahi ◽  
Xiaodong Yang ◽  
Lars Martin Sandvik Aas ◽  
Zahra Ghadyani ◽  
Morten Kildemo ◽  
...  
Keyword(s):  
Solar Cells ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells

Investigation of the Sub-Bandgap Photoresponse in CuGaS2 : Fe for Intermediate Band Solar Cells

2011 ◽  
Vol 20 (6) ◽  
pp. 625-629 ◽  
Author(s):  
Björn Marsen ◽  
Sascha Klemz ◽  
Thomas Unold ◽  
Hans-Werner Schock
Keyword(s):  
Solar Cells ◽  
Intermediate Band ◽  
Intermediate Band Solar Cells
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